DSK FR810 Fast recovery rectifier Datasheet

Diode Semiconductor Korea
FR810- - - FR860
VOLTAGE RANGE: 10 --- 600 V
CURRENT: 8.0 A
FAST RECOVERY RECTIFIERS
FEATURES
TO-220AC
2.8± 0.1
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
4.5± 0.2
10.2± 0.2
1.4± 0.2
and similar solvents
The plastic material carries U/L recognition 94V-0
8.9± 0.2
19.0± 0.5
φ 3.8± 0.15
PIN
2
1
3.5± 0.3
13.8± 0.5
2.6± 0.2
MECHANICAL DATA
Case:JEDEC TO-220AC,molded plastic
0.9± 0.1
Terminals: Solderable per
MIL- STD-202,Method 208
Weight: 0.064 ounces,1.81 gram
Mounting position: Any
5.0± 0.1
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR
810
FR
820
FR
840
FR
860
UNITS
Maximum recurrent peak reverse voltage
V RRM
100
200
400
600
V
Maximum RMS voltage
V RMS
70
140
280
420
V
Maximum DC blocking voltage
VDC
100
200
400
600
V
Maximum average forw ard rectified current
@TC=100
IF(AV)
8.0
A
IFSM
200
A
VF
1.3
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 8.0 A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =100
10
IR
150
250
Maximum reverse recovery time (Note1)
t rr
Typical junction capacitance
(Note2)
CJ
70
Typical thermal resistance
(Note3)
RθJA
22
TJ
- 55---- +150
TSTG
- 55---- + 150
Operating junction temperature range
Storage temperature range
A
150
ns
pF
/W
NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
FR810---FR860
FIG.2--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
FIG.1 -- FORWARD DERATING CURVE
8
7
6
5
4
3
2
Single Phase
H alf W ave 60H Z
R esistive or
Inductive Load
1
0
0
25
50
75
10 0
12 5
15 0 17 5
200
TJ=125
8.3ms Single Half
Sine-Wave
100
0
1
CASE TEMPERATURE,
INSTANTANEOUS FORWARD CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
600
400
200
100
TJ=25
f=1MHz
20
.2
.4
1.0
2 4
10 20
8 10
20
40 60 80 100
FIG.4 --TYPICAL FORWARD CHARACTERISTIC
1000
10
.1
4
NUMBER OF CYCLES AT 60 Hz
FIG.3--TYPICAL JUNCTION CAPACITANCE
40
2
40
100
REVERSE VOLTAGE,VOLTS
1000
100
TJ=25
Pulse Width=300 µS
40
20
10
4
2
1
0.6
0.4
0.2
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
trr
10
N.1.
50
N.1.
+0.5A
D.U.T.
( - )
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(APPROX)
(-)
1
N.1.
OSCILLOSCOPE
(NOTE 1)
-0.25A
( + )
-1.0A
1cm
NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF
SET TIMEBASEFOR50/100 ns /cm
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
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