ON IMH20T1G Dual bias resistor transistor Datasheet

IMH20T1G
Dual Bias Resistor
Transistor
NPN Surface Mount
• Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA
• High Current: IC = 600 mA max
• Lead Free Plating
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MAXIMUM RATINGS (TA = 25°C)
Symbol
Value
Unit
Collector- Base Voltage
V(BR)CBO
30
Vdc
Collector- Emitter Voltage
V(BR)CEO
15
Vdc
Emitter- Base Voltage
V(BR)EBO
5.0
Vdc
Rating
Collector Current - Continuous
IC
600
mAdc
Symbol
Max
Unit
Power Dissipation*
PD
300
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
- 55 to +150
°C
(5)
R1
Q2
Q1
R1
THERMAL CHARACTERISTICS
Characteristic
(6)
(4)
(2)
(1)
(3)
SC - 74
*Total for both Elements
MARKING
DIAGRAM
6
1
xx M
SC - 74
xx
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
IMH20T1G
SC - 74
3000/Tape & Reel
†The “T1” suffix refers to a 7 - inch reel.
 Semiconductor Components Industries, LLC, 2003
July, 2003 - Rev. 0
Publication Order Number:
IMH20T1G/D
IMH20T1G
Q1 + Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector- Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
15
-
Vdc
Collector- Base Breakdown Voltage (IC = 50 Adc, IE = 0)
V(BR)CBO
30
-
Vdc
Emitter- Base Breakdown Voltage (IE = 50 Adc, IC = 0)
V(BR)EBO
5.0
-
Vdc
Collector- Base Cutoff Current (VCB = 20 Vdc, IE = 0)
ICBO
-
0.5
Adc
Emitter- Base Cutoff Current (VEB = 4.0 V, IC = 0)
IEBO
-
0.5
Adc
DC Current Gain (Note 1) (VCE = 5.0 Vdc, IC = 50 mAdc)
hFE
100
600
-
VCE(sat)
-
80
mV
R1
1.54
2.86
kΩ
Characteristic
Collector- Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc)
Input Resistance
1. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%.
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2
IMH20T1G
Notes
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3
IMH20T1G
Thermal Clad is a registered trademark of the Bergquist Company
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4
IMH20T1G/D
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