Vishay BAT43 Small signal schottky diode Datasheet

BAT42, BAT43
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• For general purpose applications
• These diodes feature very low turn-on
voltage and fast guard ring against
excessive voltage, such as electrostatic
discharges
• These diodes are also available in the
SOD-123 case with the type designations
BAT42W-V to BAT43W-V and in MiniMELF
SOD-80 case with the type designations LL42 to
LL43.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammo tape (52 mm tape), 50 k/box
Parts Table
Part
Ordering code
Type Marking
Remarks
BAT42
BAT42-TR or BAT42-TAP
BAT42
Tape and Reel/Ammopack
BAT43
BAT43-TR or BAT43-TAP
BAT43
Tape and Reel/Ammopack
/
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VRRM
30
V
IF
2001)
mA
tp < 1 s, δ < 0.5
IFRM
5001)
mA
tp < 10 ms
IFSM
41)
A
Tamb = 65 °C
Ptot
2001)
mW
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
Surge forward current
Power dissipation1)
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Document Number 85660
Rev. 1.6, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAT42, BAT43
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
3001)
K/W
°C
Tj
125
Ambient operating temperature range
Tamb
- 65 to + 125
°C
Storage temperature range
Tstg
- 65 to +150
°C
Junction temperature
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
IR = 100 µA (pulsed)
Reverse breakdown voltage
Leakage current1)
Symbol
Min
V(BR)
30
Max
Unit
V
VR = 25 V
IR
0.5
VR = 25 V, Tj = 100 °C
IR
100
µA
IF = 200 mA
VF
1000
mV
Forward voltage1)
µA
IF = 10 mA
BAT42
VF
400
mV
IF = 50 mA
BAT42
VF
650
mV
IF = 2 mA
BAT43
VF
IF = 15 mA
BAT43
VF
VR = 1 V, f = 1 MHz
CD
Reverse recovery time
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
Rectification efficieny
RL = 15 kΩ, CL = 300 pF,
f = 45 MHz, VRF = 2 V
ηv
Diode capacitance
1)
Typ.
260
330
mV
450
mV
7
pF
5
80
ns
%
Pulse test tp < 300 µs, tp/T < 0.02
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
I F - Forward Current (mA)
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
0
18442
50
100
150
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
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2
125 °C
- 40 °C
10
25 °C
1
0.1
0.01
200
Tamb - Ambient Temperature (°C)
100
0
18443
200
400
600 800 1000 1200
VF - Instantaneous Forward Voltage (mV)
Figure 2. Typical Forward Characteristics
For technical questions within your region, please contact one of the following: Document Number 85660
[email protected], [email protected], [email protected]
Rev. 1.6, 05-Aug-10
BAT42, BAT43
Vishay Semiconductors
14
125 °C
100
CD - Diode Capacitance (pF)
IR - Reverse Leackage Current (µA)
1000
100 °C
75 °C
10
50 °C
1
25 °C
0.1
12
10
8
6
4
2
0
0.01
0
18444
10
20
30
40
VR - Reverse Voltage (V)
0
50
18445
Figure 3. Typical Reverse Characteristics
5
10
15
20
25
30
VR - Reverse Voltage (V)
Figure 4. Typical Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85660
Rev. 1.6, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
DO35
Vishay Semiconductors
DO35
Package Dimensions in mm (Inches)
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 84001
Rev. 1.3, 12-Feb-07
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DO35
Vishay Semiconductors
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Document Number 84001
Rev. 1.3, 12-Feb-07
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Revision: 11-Mar-11
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