Transistors SMD Type PNP Transistors BCW61 (KCW61) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● Low voltage 1 ● General Purpose Transistor 0.55 ● Low current +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 1. Base 0-0.1 +0.1 0.68 -0.1 2. Emitter 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -32 Collector - Emitter Voltage VCEO -32 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 250 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BCW61 (KCW61) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Typ Max VCBO Ic= -100 μA， IE=0 -32 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -32 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -32 V , IE=0 -20 Emitter cut-off current IEBO VEB= -4V , IC=0 -20 Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage DC current gain VBE DC current gain IC=-10 mA, IB=-0.25mA -60 -250 -120 -550 IC=-10 mA, IB=-0.25mA -0.6 -0.85 IC=-50 mA, IB=-1.25mA -0.68 -1.05 VCE= -5V, IC= -2mA -0.6 -0.75 hFE(1) VCE= -5V, IC= -10uA mV V 40 BCW61D 100 BCW61A 120 220 180 310 250 460 BCW61D 380 630 BCW61A 60 hFE(2) BCW61C BCW61B hFE(3) BCW61C VCE= -5V, IC= -2mA VCE= -1V, IC= -50mA BCW61D 80 100 110 Collector output capacitance Cob VCB= -10V,IE=0, f=1MHz 4.5 Collector input capacitance Cib VEB= -0.5V,IC=0, f=1MHz 11 Transition frequency fT VCE= -5V, IC= -10mA,f=100MHz ■ Classification of hfe(2) Type BCW61A BCW61B BCW61C BCW61D Range 120-220 180-310 250-460 380-630 Marking BA BB BC BD www.kexin.com.cn nA 30 BCW61B DC current gain Unit V IC=-50 mA, IB=-1.25mA BCW61B BCW61C 2 Min Collector- base breakdown voltage 100 pF MHz