InterFET NJ42 Silicon junction field-effect transistor Datasheet

Databook.fxp 1/13/99 2:09 PM Page F-24
F-24
01/99
NJ42 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ High Breakdown Voltage
S
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
D
Devices in this Databook based on the NJ42 Process.
Datasheet
S
2N6449, 2N6450
IFN6449, IFN6450
Die Size = 0.032" X 0.032"
All Bond Pads = 0.004", Dia.
Substrate is also Gate.
At 25°C free air temperature:
NJ42 Process
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Reverse Gate Leakage Current
IGSS
Drain Saturation Current (Pulsed)
IDSS
Gate Source Cutoff Voltage
VGS(OFF)
Min
Typ
– 300
– 400
Max
Unit
Test Conditions
V
IG = 1 µA, VDS = ØV
– 10
nA
VGS = – 150V, VDS = ØV
2
10
mA
VDS = 30V, VGS = ØV
–2
– 12
V
VDS = 30V, ID = 1 nA
µS
VDS = 30V, VGS = ØV
f = 1 kHz
–1
Dynamic Electrical Characteristics
Forward Transconductance
gfs
800
Input Capacitance
Ciss
6
10
pF
VDS = 30V, VGS = ØV
f = 1 MHz
Feedback Capacitance
Crss
2
5
pF
VDS = 30V, VGS = ØV
f = 1 MHz
Equivalent Noise Voltage
ēN
10
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
nV/√HZ VDS = 15V, VGS = ØV
f = 1 kHz
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Databook.fxp 1/13/99 2:09 PM Page F-25
F-25
01/99
NJ42 Process
Silicon Junction Field-Effect Transistor
Drain Current as a Function of VDS
Gfs as a Function of VGS(OFF)
VGS(OFF) = Ð4.2 V
3.0
1.2
Transconductance in mS
VGS = –1 V
2.0
VGS = –2 V
1.0
VGS = –3 V
VGS = –4 V
10
15
1.0
0.8
0.6
0.4
0.2
20
2
4
6
8
10
12
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of VGS(OFF)
Drain Saturation Current as a Function of Temperature
8
6
4
2
–2
Output Admittance in mS
5
–4
–6
–8
– 10
16
VDS = 150 V
VDS = 30 V
12
8
4
IDSS
= 5.5 mA
IDSS
= 2.5 mA
– 75
– 25
0
75
125
Free Air Temperature in °C
Output Admittance as a Function of VGS
Capacitance as a Function of VGS
1.0
10
0.8
8
0.6
IDSS = 5.5 mA
0.4
IDSS = 2.5 mA
0.2
0
IDSS
= 9 mA
Gate Source Cutoff Voltage in Volts
Capacitance in pF
Drain Saturation Current in mA
0
Zero Gate Voltage Drain Current in mA
Drain Current in mA
VGS = Ø V
10
20
30
40
Drain Source Voltage in Volts
50
175
VDS = 30 V
VDS = 50 V
6
4
2
– 0.1
–1
Gate Source Voltage in Volts
– 10
– 20
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