BLV7002 BLV7002 N-channel Enhancement Mode Vertical D-MOS Transistor Chip Description N-channel enhancement mode field-effect transistor Features Very fast switching Logic level compatible Applications Relay driver High speed line driver Logic level translator. Size Chip size: 495µm ×490µm structure Chip thickness: 220±20µm. Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Scribe street width: 50µm Pad size: 90µm x90µm Die per wafer: 25800 ABSOLUTE MAXIMUM RATING Symbol VDS VGS ID IDM Ptot TSTG Tj http://www.belling.com.cn Parameter Drain – source voltage (DC) Gate – source voltage (DC) Drain current (DC) Peak drain current Total power dissipation Storage temperature Junction temperature -1Total 2 Pages Min. -55 - Max. 60 ±20 115 0.46 0.2 +150 150 Unit V V mA A W o C o C 8/18/2006 BLV7002 CHARACTERISTICS Tj = 25oC unless otherwise specified Parameter Symbol Test conditions Min. BVDSS Drain-source breakdown voltage VGS=0V,ID=250µ A 60 IDSS Drain-source leakage current VDS=60V, VGS=0V I GSS Gate-source leakage current VGS=+20V, VDS=0V VGSth Gate-source threshold voltage VDS=2.5V, ID=250uA 1 RDSon Drain-source on-state resistance VGS=10V,ID=100mA Ciss Input capacitance VDS=25V，VGS=0V Coss Output capacitance f =1MHz Crss Reverse transfer capacitance ton Turn-On time VDD=30V, ID=200mA VGS=0-10V toff Turn-Off time - Typ. 73 1 1 1.3 - Max. 500 ±100 2.5 5 50 25 5 30 Unit V nA nA V Ω pF pF pF ns - 30 ns PATTERN DRAWING http://www.belling.com.cn -2Total 2 Pages 8/18/2006