MOTOROLA Order this document by MRF373/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides (http://mot–sps.com/rf/sg/sg.html) for scheduled introduction dates. MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs 60 W, 470 – 860 MHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment. • Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power – 60 Watts Power Gain – 13 dB Efficiency – 50% • Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture Output Power – 100 Watts (PEP) D Power Gain – 11.2 dB Efficiency – 40% IMD – –30 dBc CASE 360B–03, STYLE 1 (MRF373) • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW CASE 360C–03, STYLE 1 (MRF373S) G S MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Gate–Source Voltage VGS ± 20 Vdc ID 7 Adc PD 173 1.33 W W/°C Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C MRF373S Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF373S RθJC 0.75 °C/W Thermal Resistance, Junction to Case MRF373 RθJC 1 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA WIRELESS SEMICONDUCTOR Motorola, Inc. 2000 SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS – – 1 µAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS – – 1 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 3 4 5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) – 0.6 0.8 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 2.2 2.9 – S Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss – 79 – pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss – 46 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss – 4 – pF Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Gps 13 14.7 – dB Drain Efficiency (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) η 50 54 – % Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz, Load VSWR at 5:1 at All Phase Angles) ψ OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID =1 µA) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS, CW Operation No Degradation in Output Power TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Gps – 11.2 – dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) η – 40 – % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) IMD – – 30 – dBc MRF373 MRF373S 2 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA VDD VGG C10 R2 C15 C14 C13 R1 C4 C1 Z7 RF INPUT C11 C12 L1 Z8 Z9 Z10 Z12 Z11 RF OUTPUT C7 Z1 Z2 Z3 Z4 Z5 Z6 C2 C3 C9 C8 C6 C1 C2 C3 C4, C5, C6 C7, C8 C9 C10, C13 C11 C12 C14 C15 L1 R1 R2 C5 4.7 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 6.8 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 47 pF, B Case Chip Capacitor, ATC 0.2 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 50 V, Kemet P/N C1825C225 22 mF, 50 V, Kemet P/N T491D226K50AS 2) 1.0 mF, 50 V, Kemet P/N C1825C105 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 kΩ, Vishay Dale Chip Resistor (1206) 12 kΩ, Vishay Dale Chip Resistor (1206) Connectors N–Type (female), M/A Com P/N 3052–1648–10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55), height 30 mils, εr = 2.55 Heatsink Motorola P/N 95–11LDMOSKPS–1 LDMOS m250 3″ x 5″ Bedstead Insert Motorola P/N 95–11LDMOSKPS–2 Insert for LDMOS m250 3″ x 5″ Bedstead End Plates 2) Motorola P/N 93–3MB–9, End Plate for Type–N Connector Banana Jack and Nut 2) Johnson P/N 108–0904–001 Brass Banana Jack 2) H.H. Smith P/N SM–101 Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373) TO GATE BIAS SUPPLY TO DRAIN BIAS SUPPLY R2 C14 C15 C11 C13 R1 C10 L1 C4 C1 C8 C2 C6 C12 C3 C7 C9 C5 MRF373 Figure 2. Single–Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 3 Figure 3. MRF373 Narrowband Test Fixture Photo VDD VGG C20 R2 C25 C24 C23 R1 C7 C1 Z10 RF INPUT Z11 Z12 C21 C22 L1 Z13 Z14 Z16 Z15 RF OUTPUT C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C2 C3 C4 C6 C10 C11 C1, C2 C3 C4, C11 C5, C10 C6 C7 C8 C9 C20, C23 C21 C24 C22 C25 L1 R1 R2 C9 C8 18 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 0.8 pF, B Case Chip Capacitor, ATC 68 pF, B Case Chip Capacitor, ATC 0.3 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT 2) 1.0 mF, 50 V, Kemet P/N C1825C105 22 mF, 35 V, Kemet P/N T491D226K35AS 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 kΩ, Vishay Dale Chip Resistor (1206) 12 kΩ, Vishay Dale Chip Resistor (1206) Connectors N–Type (female), M/A Com P/N 3052–1648–10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX–0300–55), height 30 mils, εr = 2.55 (new PCB’s available from CMR) Heatsink Motorola P/N 95–11LDMOSKPS–1 LDMOS m250 3″ x 5″ Bedstead Insert Motorola P/N 95–11LDMOSKPS–2S Insert for LDMOS m250S 3″ x 5″ Bedstead End Plates 2) Motorola P/N 93–3MB–9, End Plate for Type–N Connector Banana Jack and Nut 2) Johnson P/N 108–0904–001 Brass Banana Jack 2) H.H. Smith P/N SM–101 Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373S) MRF373 MRF373S 4 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA TO GATE BIAS SUPPLY TO DRAIN BIAS SUPPLY R2 C24 C25 C21 C23 R1 C11 C20 L1 C7 C1 C10 C2 C9 C22 C3 C4 C5 C6 C8 MRF373S Figure 5. Single–Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373S) Figure 6. MRF373S Narrowband Test Circuit Photo MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 5 TYPICAL CHARACTERISTICS FOR MRF373 IN SINGLE–ENDED FIXTURE 22 VDD = 28 V f = 860 MHz G p, POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) G p, POWER GAIN (dB) IDQ = 500 mA 400 mA 300 mA 15 200 mA 100 mA 14 13 30 40 35 45 Pout, OUTPUT POWER (dBm) VDD = 28 V IDQ = 200 mA Pout = 60 W (CW) 20 17 16 58 18 16 η IRL 57 η , DRAIN EFFICIENCY (%) 18 56 55 Gp 14 54 12 53 10 52 8 51 6 800 50 Figure 7. Power Gain versus Output Power 50 820 840 880 860 f, FREQUENCY (MHz) 900 920 Figure 8. Performance in Narrowband Circuit 120 C, CAPACITANCE (pF) 100 Ciss 80 60 Coss 40 20 Crss 0 0 10 20 30 40 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 50 Figure 9. Capacitance versus Voltage Table 1. Common Source S–Parameters (VDS = 28 V, ID = 2.0 A) f MHz S11 400 |S11| 0.921 450 0.922 500 S21 φ 182 |S21| 2.23 181 1.95 0.924 180 550 0.926 600 S12 φ 52 |S12| 0.009 49 0.009 1.70 46 179 1.49 0.929 178 650 0.932 700 0.936 750 S22 φ φ 39 |S22| 0.824 184 53 0.832 184 0.010 64 0.841 184 42 0.011 72 0.851 183 1.31 38 0.013 78 0.860 183 177 1.16 35 0.015 81 0.870 182 176 1.03 31 0.017 82 0.881 182 0.940 176 0.93 28 0.019 82 0.892 181 800 0.945 175 0.84 26 0.021 82 0.904 180 850 0.951 174 0.78 24 0.023 80 0.917 180 900 0.957 173 0.72 24 0.025 78 0.929 179 MRF373 MRF373S 6 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA C19A R3 R5T R4 R2A R6 C17A C16A L3A R7A C15 C18A L5 C2 R1A C3A C5 C4 C1 L6 L2 C6 L4 C3B L1A C7 C8 C9 C10 R1B C14A C12 C11 L1B C13 C14B C18B R7B L3B C16B R2B C17B MRF373S C19B Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil “tab” fits into the main PCB “slot” resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 10. MRF373S Broadband Push–Pull Component Layout MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 7 Table 2. MRF373S Broadband Push–Pull Application Parts List Designation Description C1 1.0 pF, AVX, P12101J1R0BBT C2, C4, C10 10 pF, AVX, P12101J100GBT C3A, B 120 pF, 300 V, AVX, AQ149M121JAJBE C5, C6, C9 12 pF, AVX, P12101J120GBT C7, C8 18 pF, AVX, P12101J180GBT C11 6.8 pF, AVX, P12101J6R8BBT C12 4.7 pF, AVX, P12101J4R7BBT C13, C18A, B 3.3 pF, AVX, P12101J3R3BBT C14A, B 100 pF, 500 V, AVX, AQ147M101JAJBE C15 2.7 pF, AVX, P12101J2R7BBT C16A, B 3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT C17A, B, C19A, B 22 mF, 35 V, Kemet P/N T491D226K35AS L1A, B, L3A, B, L4, L5 8.0 nH, Coilcraft P/N A03T L2, L6 12.5 nH, Coilcraft P/N A04T R1A, B 22 Ω, Vishay Dale Chip Resistor, 1/4 W (1206) R2A, B 10 Ω, Vishay Dale Chip Resistor, 1/4 W (1206) R3 390 Ω, Vishay Dale Chip Resistor (1206) R4 2.4 kΩ, Vishay Dale Chip Resistor (1206) R5T 470 Ω Thermistor, KOA SPEER MOT P/N 0680149M01 PCB MRF373 PP Printed Circuit Board Rev 2C, Rogers RO4350, Height 30 mils, εr = 3.48 Balun A, B Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, εr = 10.2 MRF373 MRF373S 8 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA 15 –10 VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side –15 –20 –25 –30 470 MHz –35 660 MHz –40 –45 VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 14 Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL TWO–TONE BROADBAND CHARACTERISTICS 13 12 860 MHz 11 660 MHz 10 470 MHz 9 860 MHz –50 8 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 11. Intermodulation Distortion versus Output Power (MRF373S Broadband Push–Pull Fixture) 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 12. Broadband Power Gain versus Output Power (MRF373S Broadband Push–Pull Fixture) η , DRAIN EFFICIENCY (%) D 50 VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 40 860 MHz 660 MHz 30 470 MHz 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 13. Efficiency versus Output Power (MRF373S Broadband Push–Pull Fixture) MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 9 NOTES MRF373 MRF373S 10 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA NOTES MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS – RF AND IF DEVICE DATA MRF373 MRF373S 11 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030” AWAY FROM EDGE OF FLANGE. G 1 –B– DIM A B C D E F G H K N Q 3 Q 2 PL 2 K 0.25 (0.010) D E H T A M B M C F N M –T– –A– SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– 2 K E MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.96 2.21 5.47 6.47 8.89 9.39 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 360B–03 ISSUE D (MRF373) 1 INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.077 0.087 0.215 0.255 0.350 0.370 0.120 0.140 DIM A B C D E F H K N D N F H 3 C –T– SEATING PLANE INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.45 1.70 2.16 2.92 8.89 9.39 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360C–03 ISSUE B (MRF373S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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