June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ________________________________________________________________________________ S G D Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter NDP6030PL VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage - Continuous ±16 V ID Drain Current - Continuous -30 A - Pulsed -90 PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds TJ,TSTG Operating and Storage Temperature Range NDB6030PL 75 Units W 0.5 -65 to 175 °C 275 °C -65 to 175 °C 2 °C/W 62.5 °C/W THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation NDP6030PL Rev.B1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 16 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA o TJ = 125°C ON CHARACTERISTICS -250 µA 1 mA -100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = -250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID= -250 µA TJ = 125°C RDS(ON) mV/oC -36 Static Drain-Source On-Resistance mV/oC 2.2 -1 -1.4 -2 -0.8 -1.08 -1.6 0.037 0.042 0.053 0.075 0.021 0.025 VGS = -4.5 V, ID = -15 A TJ = 125°C VGS = -10 V, ID = -19 A -20 V Ω ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V A gFS Forward Transconductance VDS = -4.5 V, ID = -19 A 20 S VDS = -15 V, VGS = 0 V, f = 1.0 MHz 1570 pF 975 pF 360 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time 12.5 25 nS tr Turn - On Rise Time 60 120 nS tD(off) Turn - Off Delay Time 50 100 nS tf Turn - Off Fall Time 52 100 nS Qg Total Gate Charge 26 36 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15 V, ID = -5 A, VGS = -5 V, RGEN = 6 Ω VDS= -12 V ID = -30 A , VGS = -5 V 6.5 nC 11.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -15 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IF = -30 A dIF/dt = 100 A/µs (Note) -0.92 -30 A -100 A -1.3 V 58 ns -1.5 A Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6030PL Rev.B1 V GS = -10V -7.0 1.6 -6.0 R DS(ON) , NORMALIZED 60 -5.0 -4.5 40 -4.0 -3.5 20 -3.0 0 DRAIN-SOURCE ON-RESISTANCE -I D , DRAIN-SOURCE CURRENT (A) Typical Electrical Characteristics V GS= -3.5 V 1.4 -4.0 -4.5 1.2 -5.0 1 -5.5 -6.0 0.8 -7.0 -10 0.6 0.4 0 1 2 3 4 0 5 10 20 T = 25°C I D = -15A 60 V GS = -4.5V 1.4 1.2 1 0.8 -25 ID = -15A A R DS(ON) , ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (OHMS) 50 0.12 1.8 0.6 -50 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.6 30 -I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 0.1 125 °C 0.08 0.06 0.04 0.02 175 0 J 2 4 6 8 10 -VGS ,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. T = -55°C A -ID , DRAIN CURRENT (A) VDS = -5V -IS , REVERSE DRAIN CURRENT (A) 30 25°C 25 125°C 20 15 10 5 0 1 2 -V GS 3 4 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 60 10 VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.0001 0.2 0.4 -V SD 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP6030PL Rev.B1 Typical Electrical Characteristics (continued) 5000 I D = -30A 3000 VDS = -6V -12V -24V 8 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 2000 Ciss Coss 1000 500 2 0 150 0.1 0 10 20 30 40 Crss f = 1 MHz VGS = 0 V 300 0.3 1 2 5 10 20 30 -VDS , DRAIN TO SOURCE VOLTAGE (V) 50 Q g , GATE CHARGE (nC) Figure 8.Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 150 N) S(O RD 50 VGS = -4.5V SINGLE PULSE R θJC = 2.0 °C/W TC = 25°C 4000 3000 2000 1000 0 0.001 1 1 SINGLE PULSE R θJC =2° C/W TC = 25°C 5000 10m s 100 ms DC 10 2 6000 1m s 30 5 7000 10µ s 10 0µ s IT LIM POWER (W) -ID , DRAIN CURRENT (A) 100 2 5 10 20 30 50 0.01 TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE 0.1 1 10 100 1,000 SINGLE PULSE TIME (mS) - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.3 D = 0.5 R θJC (t) = r(t) * RθJC R θJC = 2.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 Single Pulse 0.01 0.01 0.05 t2 TJ - TC = P * RθJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 Figure 11. Transient Thermal Response Curve. NDP6030PL Rev.B1