ASI ASI10624 Npn silicon rf power transistor Datasheet

MLN1030SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L PILL
The ASI MLN1030SL is Designed for
A
FEATURES:
S
•
•
• Omnigold™ Metalization System
D
ØB
G
S
MAXIMUM RATINGS
IC
0.250 A
VCBO
40 V
VCEO
28 V
D
E
VEBO
3.5 V
PDISS
7.0 W @ TC = 25 OC
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
O
TJ
-65 C to +200 C
TSTG
-65 OC to +150 OC
θ JC
20 OC/W
CHARACTERISTICS
SYMBOL
F
MAXIMUM
1.055 / 26.80
B
O
ØC
C
.275 / 6.99
.285 / 7.24
D
.004 / 0.10
.006 / 0.15
E
.050 / 1.27
.060 . 1.52
F
.118 / 3.00
.130 / 3.30
ORDER CODE: ASI10624
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1 mA
40
V
BVCEO
IC = 1 mA
28
V
BVEBO
IE = 1 mA
3.5
V
ICBO
VCB = 24 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
VCE = 20 V
POUT = 1.0 W
IC = 100 mA
20
f = 1.0 MHz
ICQ = 150 mA
f = 1.0 GHz
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.5
mA
120
---
5.0
pF
dB
REV. A
1/1
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