FDI040N06 tm N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC convertors / Synchronous Rectification • RoHS Compliant D G D S G I2-PAK FDI Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Parameter Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V -Continuous (TC = 25oC, Silicion Limited) 168* -Continuous (TC = 100oC, Silicion Limited) 118* -Continuous (TC = 25oC, Package Limited) 120 - Pulsed A (Note 1) 672 A (Note 2) 872 mJ 7.0 V/ns (Note 3) (TC = 25oC) 231 W - Derate above 25oC 1.54 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 60 o -55 to +175 C 300 oC Ratings Units *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 0.65 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2009 Fairchild Semiconductor Corporation FDI040N06 Rev. A 1 o C/W www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET June 2009 Device Marking FDI038N06 Device FDI038N06 Package TO-262 Reel Size Tube Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V - 0.04 - V/oC VDS = 60V, VGS = 0V - - 1 VDS = 60V, VGS = 0V, TC = 150oC - - 500 µA VGS = ±20V, VDS = 0V - - ±100 2.5 3.5 4.5 V - 3.2 4.0 mΩ - 169 - S Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TC= 25oC ID = 250µA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance VGS = 10V, ID = 75A gFS Forward Transconductance VDS = 10V, ID = 75A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V (Note 4, 5) - 6190 8235 pF - 900 1195 pF - 385 580 pF - 102 133 nC - 32 - nC - 32 - nC - 30 70 ns - 40 90 ns - 55 120 ns - 24 58 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 4.7Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 168 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 672 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.3 V trr Reverse Recovery Time - 41 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 75A dIF/dt = 100A/µs - 47 - nC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.31mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDI040N06 Rev. A 2 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 1000 1000 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 10V 2. 250µs Pulse Test ID,Drain Current[A] 100 ID,Drain Current[A] Figure 2. Transfer Characteristics 10 1 100 o 175 C o 25 C 10 o -55 C *Notes: 1. 250µs Pulse Test o 2. TC = 25 C 0.1 0.01 1 6 0.1 1 VDS,Drain-Source Voltage[V] 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS,Gate-Source Voltage[V] IS, Reverse Drain Current [A] 1000 3.5 VGS = 10V 3.0 VGS = 20V o 175 C 100 o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 2.5 0 60 120 180 240 ID, Drain Current [A] 300 1 0.2 360 Figure 5. Capacitance Characteristics 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] 1.2 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 2. 250µs Pulse Test Figure 6. Gate Charge Characteristics 10000 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 100 0.1 FDI040N06 Rev. A 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4.0 RDS(ON) [mΩ ], Drain-Source On-Resistance 3 VDS = 12V VDS = 30V VDS = 48V 8 6 4 2 *Note: ID = 75A 0 1 10 VDS, Drain-Source Voltage [V] 0 30 3 20 40 60 80 100 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.6 1.2 0.8 *Notes: 1. VGS = 10V 2. ID = 75A 0.4 -75 200 Figure 9. Maximum Safe Operating Area -25 25 75 125 175 o TJ, Junction Temperature [ C] 225 Figure 10. Maximum Drain Current vs. Case Temperature 1000 180 100µs 144 100 ID, Drain Current [A] ID, Drain Current [A] 2.0 1ms 10ms 10 100ms Operation in This Area is Limited by R DS(on) 1s *Notes: 1 o 108 Limited by package 72 36 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.1 0.1 1 10 VDS, Drain-Source Voltage [V] 0 25 100 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve Thermal Response [Zθ JC] 1 0.5 0.1 0.2 0.1 0.05 0.01 t1 0.01 *Notes: Single pulse t2 o 1. ZθJC(t) = 0.65 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.001 -5 10 FDI040N06 Rev. A PDM 0.02 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDI040N06 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDI040N06 Rev. A 5 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V VGS ( D r iv e r ) GS G S am e T ype as D U T V DD • d v / d t c o n t r o lle d b y R G • IS D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v /d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDI040N06 Rev. A 6 www.fairchildsemi.com I2-PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 0.80 ±0.10 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 5° (4 1.27 ±0.10 +0.10 0.50 –0.05 2.54 TYP 2.40 ±0.20 10.00 ±0.20 FDI040N06 Rev. A 7 www.fairchildsemi.com FDI040N06 N-Channel PowerTrench® MOSFET Mechanical Dimensions TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * ® The Power Franchise TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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