IRF IRHLUB7970Z4 Simple drive requirement Datasheet

PD-94764L
IRHLUB7970Z4
JANSR2N7626UB
60V, P-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
REF: MIL-PRF-19500/745
™
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHLUB7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UB
IRHLUB7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UB
UB
Refer to Page 11 for 3 Additional Part Numbers IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4
(SHIELDED METAL LID)
Features:
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments. The threshold voltage remains within acceptable
operating limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as current boost
low signal source in PWM, voltage comparator and operational
amplifiers.
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Complimentary P-Channel Available IRHLUB770Z4, IRHLUBN770Z4
IRHLUBC770Z4 & IRHLUBCN770Z4
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -4.5V, TC = 25°C
ID @ VGS = -4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-0.53
-0.33
-2.12
0.57
0.0045
±10
33.5
-0.53
0.06
-4.4
-55 to 150
300 (for 5s)
43 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
mg
For footnotes refer to the last page
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1
09/15/10
Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.23
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
—
—
V
-0.055
—
V/°C
—
1.40
Ω
—
3.1
—
—
—
-2.0
—
—
-1.0
-10
V
mV/°C
S
nA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.4
-100
100
3.6
1.5
1.8
22
22
27
27
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
167
43
10
—
—
—
Rg
Gate Resistance
VGS = -4.5V, ID = -0.33A Ã
VDS = VGS, ID = -250µA
nC
VDS = -10V, IDS = 0.33A Ã
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.53A
VDS = -30V
ns
VDD = -30V, ID = -0.53A,
VGS = -5.0V, RG = 24Ω
µA
nH
pF
Ω
56
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-0.53
-2.12
-5.0
50
25
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -0.53A, VGS = 0V „
Tj = 25°C, IF = -0.53A, di/dt ≤ -100A/µs
VDD ≤ -25V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
220
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation
Characteristics
IRHLUB7970Z4, JANSR2N7626UB
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source„
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (UB)
Diode Forward Voltage „
VSD
†
Units
Test Conditions
V
µA
VGS = 0V, ID = -250µA
VGS = VDS, ID = -250µA
VGS = -10V
VGS = 10V
VDS = -48V, VGS = 0V
1.36
Ω
VGS = -4.5V, ID = -0.33A
—
1.40
Ω
VGS = -4.5V, ID = -0.33A
—
-5.0
V
VGS = 0V, ID = -0.53A
Up to 300K Rads (Si)
1
Min
Max
-60
-1.0
—
—
—
—
-2.0
-100
100
-1.0
—
nA
1. Part Numbers IRHLUB7970Z4, IRHLUB7930Z4 and additional part numbers listed on page 11.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
@VGS=
0V
2V
4V
5V
6V
@VGS=
7V
300 ± 7.5%
38 ± 7.5%
-60
-60
-60
-60
-60
-50
62 ± 5%
355 ± 7.5%
33 ± 7.5%
-60
-60
-60
-60
-60
-
85 ± 5%
380 ± 7.5%
29 ± 7.5%
-60
-60
-60
-60
-
-
Bias VDS (V)
38 ± 5%
-70
-60
-50
-40
-30
-20
-10
0
LET=38 ± 5%
LET=62 ± 5%
LET=85 ± 5%
0
1
2
3
4
5
6
7
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
10
VGS
TOP
-10V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
-2.50V
BOTTOM -2.25V
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.0V
-2.75V
-2.50V
BOTTOM -2.25V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
10
1
-2.25V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
-2.25V
0.1
0.1
1
10
100
0.1
-V DS , Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
10
2.0
1.0
TJ = 150°C
T J = 25°C
VDS = -25V
15
60µs PULSE
WIDTH
0.1
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-ID, Drain-to-Source Current ( Α)
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID = -0.53A
1.6
1.2
0.8
0.4
VGS = -4.5V
0.0
1.5
2.0
2.5
3.0
3.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
60µs PULSE WIDTH
Tj = 150°C
4.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHLUB7970Z4, JANSR2N7626UB
3.5
ID = -0.53A
3.0
2.5
T J = 150°C
2.0
1.5
1.0
T J = 25°C
0.5
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
3.0
TJ = 150°C
2.5
2.0
1.5
T J = 25°C
1.0
Vgs = -4.5V
0.5
10 11 12
0
0.5
1.0
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
2.0
2.5
Fig 6. Typical On-Resistance Vs
Drain Current
75
3.0
ID = -1.0mA
-V GS(th) Gate threshold Voltage (V)
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
1.5
-I D, Drain Current (A)
70
65
60
2.5
2.0
1.5
1.0
0.5
ID = -50µA
ID = -250µA
ID = -1.0mA
ID = -150mA
0.0
55
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
250
-VGS , Gate-to-Source Voltage (V)
200
C, Capacitance (pF)
12
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
150
100
Coss
50
ID = -0.53A
VDS =-48V
VDS =-30V
VDS =-12V
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
0
1
10
100
0
2
3
4
5
6
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0.6
10
-I SD , Reverse Drain Current ( Α)
1
0.5
-ID , Drain Current (A)
T J = 150°C
T J = 25°C
1
0.1
0.4
0.2
0.1
VGS = 0V
0.01
0.0
0
1
2
3
4
-V SD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
5
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
80
OPERATION IN THIS AREA
LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain-to-Source Current (A)
10
1 00µs
1
1ms
10ms
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
DC
1
10
100
ID
TOP
-0.53A
-0.34A
BOTTOM -0.24A
70
60
50
40
30
20
10
0
1000
25
-VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJA )
1000
D = 0.50
100
0.20
0.10
P DM
0.05
10
t1
0.02
SINGLE PULSE
( THERMAL RESPONSE )
0.01
t2
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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7
Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
L
VDS
I AS
D.U.T.
RG
IAS
VGS
-20V
tp
VDD
A
DRIVER
0.01Ω
tp
15V
V(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-4.5V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+VDS
VGS
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 17b. Gate Charge Test Circuit
Fig 17a. Basic Gate Charge Waveform
RD
V DS
td(on)
VGS
D.U.T.
RG
tr
t d(off)
tf
VGS
V DD
10%
-
+
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
90%
VDS
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
Case Outline and Dimensions — UB (Shielded Metal Lid Connected to 4th Pad)
3.25 [.128]
2.92 [.115]
3X
0.30 R REF.
[.012 R REF.]
0.61 [.024]
0.41 [.016]
4
3X
0.96 [.038]
0.56 [.022]
3
2.74 [.108]
2.41 [.095]
2
1
0.55 R MIN.
[.022 R MIN.]
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.42 [.056]
1.17 [.046]
2.01 [.079]
1.81 [.071]
ME T AL LID
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994
2. CONT ROLLING DIMENSION: INCH.
3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. HAT CHED AREAS ON PACKAGE DENOTE MET ALIZ AT ION AREAS .
5. PAD AS SIGNMENT S: 1 = GAT E, 2 = S OURCE, 3 = DRAIN, 4 = S HIELDING CONNECT ED T O T HE LID.
4
Case Outline and Dimensions — UBN (Isolated Metal Lid, No 4th Pad)
3.25 [.128]
2.92 [.115]
3X
0.61 [.024]
0.41 [.016]
3X
2.74 [.108]
2.41 [.095]
0.96 [.038]
0.56 [.022]
3
2
1
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.42 [.056]
1.17 [.046]
2.01 [.079]
1.81 [.071]
MET AL LID
NOT ES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994
2.
3.
4.
5.
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CONTROLLING DIMENS ION: INCH.
DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ].
HATCHED AREAS ON PACKAGE DENOT E MET ALIZ ATION AREAS .
PAD AS S IGNMENTS : 1 = GATE, 2 = SOURCE, 3 = DRAIN, 4 = IS OLAT ED METAL LID.
4
9
Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
Case Outline and Dimensions—UBC (Shielded Ceramic Lid Connected to 4th Pad)
3.25 [.128]
2.92 [.115]
3X
0.30 R REF.
[.012 R REF.]
0.61 [.024]
0.41 [.016]
4
3X
0.96 [.038]
0.56 [.022]
3
2.74 [.108]
2.41 [.095]
2
1
0.55 R MIN.
[.022 R MIN.]
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.75 [.069]
1.40 [.055]
2.01 [.079]
1.81 [.071]
CERAMIC LID
NOTES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994
2. CONTROLLING DIMENS ION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. HATCHED AREAS ON PACKAGE DENOTE METALIZATION AREAS.
5. PAD ASSIGNMENTS : 1 = GAT E, 2 = S OURCE, 3 = DRAIN, 4 = SHIELDING CONNECTED TO T HE LID.
4
Case Outline and Dimensions — UBCN (Isolated Ceramic Lid, No 4th Pad)
3.25 [.128]
2.92 [.115]
3X
0.61 [.024]
0.41 [.016]
3X
2.74 [.108]
2.41 [.095]
0.96 [.038]
0.56 [.022]
3
2
1
0.99 [.039]
0.89 [.035]
3X 0.355 [.014]
MIN.
1.75 [.069]
1.40 [.055]
2.01 [.079]
1.81 [.071]
CERAMIC LID
NOT ES :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994
2.
3.
4.
5.
10
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ].
HAT CHED AREAS ON PACKAGE DENOT E MET ALIZ ATION AREAS.
PAD AS SIGNMENT S: 1 = GAT E, 2 = SOURCE, 3 = DRAIN, 4 = ISOLATED CERAMIC LID.
4
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Pre-Irradiation
IRHLUB7970Z4, JANSR2N7626UB
Footnotes:
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
‚ VDD = -25V, starting TJ = 25°C, L= 238 mH
Peak IL =- 0.53A, VGS = -10V
ƒ ISD ≤ -0.53A, di/dt ≤ -100A/µs,
VDD ≤ -60V, TJ ≤ 150°C
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
† Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Additional Product Summaries (continued from page 1 and 3)
Product Summary
Part Number
Radiation Level RDS(on) I D
QPL Part Number
IRHLUBN7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UBN
IRHLUBN7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UBN
UBN
(ISOLATED METAL LID)
Product Summary
Part Number
Radiation Level RDS(on) ID
QPL Part Number
IRHLUBC7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UBC
IRHLUBC7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UBC
UBC
(SHIELDED CERAMIC LID)
Product Summary
Part Number
Radiation Level RDS(on) I D
QPL Part Number
IRHLUBCN7970Z4 100K Rads (Si) 1.4Ω -0.53A JANSR2N7626UBCN
IRHLUBCN7930Z4 300K Rads (Si) 1.4Ω -0.53A JANSF2N7626UBCN
UBCN
(ISOLATED CERAMIC LID)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/2010
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11