PHILIPS BF908WR N-channel dual-gate mos-fet Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF908WR
N-channel dual-gate MOS-FET
Preliminary specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
1995 Apr 25
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
FEATURES
PINNING
• High forward transfer admittance
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
PIN
SYMBOL
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
source
d
3
4
g2
DESCRIPTION
g1
Depletion type field effect transistor in a plastic
microminiature SOT343R package. The transistor is
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
2
1
s,b
Top view
MAM198
CAUTION
Marking code: MD.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline (SOT343R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
12
V
ID
drain current
−
−
40
mA
Ptot
total power dissipation
−
−
300
mW
Tj
operating junction temperature
−
−
150
°C
yfs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
2.4
3.1
4
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
fF
F
noise figure
f = 800 MHz
−
1.5
2.5
dB
1995 Apr 25
2
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
12
V
ID
drain current
−
40
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
+150
°C
up to Tamb = 45 °C; see Fig.2;
note 1
Note
1. Device mounted on a printed-circuit board.
MLD154
400
handbook, halfpage
Ptot
(mW)
300
200
100
0
0
50
100
150
200
Tamb ( oC)
Fig.2 Power derating curve.
1995 Apr 25
3
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
350
K/W
Rth j-s
thermal resistance from junction to soldering point
Ts = 87 °C; note 2
210
K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
8
−
20
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
8
−
20
V
V(P)G1-S
gate 1-source cut-off voltage
VG2-S = 4 V; VDS = 8 V; ID = 20 µA −
−
−2
V
V(P)G2-S
gate 2-source cut-off voltage
VG1-S = 4 V; VDS = 8 V; ID = 20 µA −
−
−1.5
V
IDSS
drain-source current
VG2-S = 4 V; VDS = 8 V; VG1-S = 0
3
15
27
mA
IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
−
−
50
nA
IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
−
50
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 °C
36
43
50
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.4
3.1
4
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
1.8
2.5
pF
Cos
drain-source capacitance
f = 1 MHz
1.2
1.7
2.2
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS = BSopt
−
0.6
1.2
dB
f = 800 MHz; GS = GSopt; BS = BSopt
−
1.5
2.5
dB
1995 Apr 25
4
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
MRC281
40
handbook, halfpage
ID
(mA)
MRC282
30
handbook, halfpage
VG2-S = 4 V
VG1-S =
0.3 V
ID
(mA)
3V
30
0.2 V
2V
20
0.1 V
1.5 V
20
1V
0V
10
–0.1 V
0.5 V
10
–0.2 V
–0.3 V
0V
0
–0.6
0
–0.4
–0.2
0
0.2
0.4
0.6
VG1-S (V)
VDS = 8 V.
Tj = 25 °C.
0
4
8
12
16
VDS (V)
VG2-S = 4 V.
Tj = 25 °C.
Fig.3 Transfer characteristics; typical values.
Fig.4 Output characteristics; typical values.
MRC280
50
Yfs
(mS)
40
MRC276
60
4V
3V
2V
Yfs
(mS)
1.5 V
40
30
1V
20
20
0.5 V
10
VG2-S = 0 V
0
0
0
5
10
15
20
40
25
I D (mA)
0
40
80
120
160
T j (o C)
VDS = 8 V.
Tj = 25 °C.
Fig.5
Forward transfer admittance as a function
of drain current; typical values.
1995 Apr 25
Fig.6
5
Forward transfer admittance as a function
of junction temperature; typical values.
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
PACKAGE OUTLINE
1.00
max
0.2 M A
0.1
max
0.4
0.2
0.2 M B
0.2
3
4
A
1.35
1.15
2.2
2.0
2
0.3
0.1
1
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
Dimensions in mm.
Fig.7 SOT343R.
1995 Apr 25
6
MSB367
Philips Semiconductors
Preliminary specification
N-channel dual-gate MOS-FET
BF908WR
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Apr 25
7
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