To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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HM628100I Series Wide Temperature Range Version 8 M SRAM (1024-kword × 8-bit) ADE-203-1302B (Z) Rev. 1.0 Sep. 25, 2002 Description The Hitachi HM628100I Series is 8-Mbit static RAM organized 1,048,576-word × 8-bit. HM628100I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin TSOP II for high density surface mounting. Features • • • • • • • • Single 5.0 V supply: 5.0 V ± 10 % Fast access time: 55 ns (max) Power dissipation: Active: 10 mW/MHz (typ) Standby: 7.5 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup Temperature range: –40 to +85°C HM628100I Series Ordering Information Type No. Access time Package HM628100LTTI-5SL 55 ns 400-mil 44pin plastic TSOP II (normal-bend type) (TTP-44DE) 2 HM628100I Series Pin Arrangement 44-pin TSOP A4 A3 A2 A1 A0 CS1 NC NC I/O0 I/O1 VCC VSS I/O2 I/O3 NC NC WE A19 A18 A17 A16 A15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE CS2 A8 NC NC I/O7 I/O6 VSS VCC I/O5 I/O4 NC NC A9 A10 A11 A12 A13 A14 (Top view) Pin Description (TSOP) Pin name Function A0 to A19 Address input I/O0 to I/O7 Data input/output CS1 Chip select 1 CS2 Chip select 2 WE Write enable OE Output enable VCC Power supply VSS Ground NC No connection 3 HM628100I Series Block Diagram (TSOP) LSB A5 A6 A7 A4 A3 A9 A10 A11 A12 A13 MSB A14 V CC V SS • • • • • Row decoder I/O0 Memory matrix 2,048 x 4,096 Column I/O • • Input data control Column decoder I/O7 LSB MSB A16 A17A18 A19 A0 A1 A2 A15A8 • • CS2 CS1 Control logic WE OE 4 • • HM628100I Series Operation Table CS1 CS2 WE OE I/O0 to I/O7 Operation H × × × High-Z Standby × L × × High-Z Standby L H H L Dout Read L H L × Din Write L H H H High-Z Output disable Note: H: V IH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Symbol Value Unit Power supply voltage relative to V SS VCC –0.5 to + 7.0 1 V 2 Terminal voltage on any pin relative to V SS VT –0.5* to V CC + 0.3* V Power dissipation PT 1.0 W Storage temperature range Tstg –55 to +125 °C Storage temperature range under bias Tbias –40 to +85 °C Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns. 2. Maximum voltage is +7.0 V. DC Operating Conditions Parameter Symbol Min Typ Max Unit Supply voltage VCC 4.5 5.0 5.5 V VSS 0 0 0 V Input high voltage VIH 2.2 — VCC + 0.3 V Input low voltage VIL –0.3 — 0.8 V Ambient temperature range Ta –40 — 85 °C Note: Note 1 1. VIL min: –3.0 V for pulse half-width ≤ 30 ns. 5 HM628100I Series DC Characteristics Parameter Symbol Min Typ* 1 Max Unit Test conditions Input leakage current |ILI| — — 1 µA Vin = VSS to V CC Output leakage current |ILO | — — 1 µA CS1 = VIH or CS2 = VIL or OE = VIH or WE = VIL, or VI/O = VSS to V CC Operating current I CC — — 20 mA CS1 = VIL, CS2 = VIH, Others = VIH/VIL, I I/O = 0 mA Average operating current I CC1 — 14 25 mA Min. cycle, duty = 100%, I I/O = 0 mA, CS1 = VIL, CS2 = VIH, Others = VIH/VIL I CC2 — 2 4 mA Cycle time = 1 µs, duty = 100%, I I/O = 0 mA, CS1 ≤ 0.2 V, CS2 ≥ V CC – 0.2 V VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V Standby current I SB — 0.1 0.3 mA CS2 = VIL Standby current I SB1 — 0.8 10 µA 0 V ≤ Vin (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS1 ≥ V CC – 0.2 V, CS2 ≥ V CC – 0.2 V Output high voltage VOH 2.4 — — V I OH = –1 mA Output low voltage VOL — — 0.4 V I OL = 2.1 mA Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Symbol Min Typ Max Unit Test conditions Note Input capacitance Cin — — 8 pF Vin = 0 V 1 Input/output capacitance CI/O — — 10 pF VI/O = 0 V 1 Note: 6 1. This parameter is sampled and not 100% tested. HM628100I Series AC Characteristics (Ta = –40 to +85°C, VCC = 5.0 V ± 10 %, unless otherwise noted.) Test Conditions • • • • Input pulse levels: VIL = 0.4 V, VIH = 2.2 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + C L (50 pF) (Including scope and jig) Read Cycle HM628100I -5 Parameter Symbol Min Max Unit Read cycle time t RC 55 — ns Address access time t AA — 55 ns Chip select access time t ACS1 — 55 ns t ACS2 — 55 ns Output enable to output valid t OE — 35 ns Output hold from address change t OH 10 — ns Chip select to output in low-Z t CLZ1 10 — ns 2, 3 t CLZ2 10 — ns 2, 3 Output enable to output in low-Z t OLZ 5 — ns 2, 3 Chip deselect to output in high-Z t CHZ1 0 20 ns 1, 2, 3 t CHZ2 0 20 ns 1, 2, 3 t OHZ 0 20 ns 1, 2, 3 Output disable to output in high-Z Notes 7 HM628100I Series Write Cycle HM628100I -5 Parameter Symbol Min Max Unit Notes Write cycle time t WC 55 — ns Address valid to end of write t AW 50 — ns Chip selection to end of write t CW 50 — ns 5 Write pulse width t WP 40 — ns 4 Address setup time t AS 0 — ns 6 Write recovery time t WR 0 — ns 7 Data to write time overlap t DW 25 — ns Data hold from write time t DH 0 — ns Output active from end of write t OW 5 — ns 2 Output disable to output in high-Z t OHZ 0 20 ns 1, 2 Write to output in high-Z t WHZ 0 20 ns 1, 2 Notes: 1. t CHZ, tOHZ and t WHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. At any given temperature and voltage condition, t HZ max is less than tLZ min both for a given device and from device to device. 4. A write occures during the overlap of a low CS1, a high CS2, a low WE. A write begins at the latest transition among CS1 going low, CS2 going high, WE going low. A write ends at the earliest transition among CS1 going high, CS2 going low, WE going high. tWP is measured from the beginning of write to the end of write. 5. t CW is measured from the later of CS1 going low or CS2 going high to the end of write. 6. t AS is measured from the address valid to the beginning of write. 7. t WR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write cycle. 8 HM628100I Series Timing Waveform Read Cycle t RC Address Valid address tAA tACS1 CS1 tCLZ1*2, 3 CS2 tCHZ1*1, 2, 3 tACS2 tCLZ2*2, 3 tCHZ2*1, 2, 3 tOHZ*1, 2, 3 tOE OE tOLZ*2, 3 Dout High impedance tOH Valid data 9 HM628100I Series Write Cycle (1) (WE Clock) tWC Valid address Address tWR*7 tCW*5 CS1 tCW*5 CS2 tAW tWP*4 WE tAS*6 tDW tDH Valid data Din tWHZ*1, 2 tOW*2 High impedance Dout 10 HM628100I Series Write Cycle (2) (CS Clock, OE = VIH) tWC Valid address Address tAW tAS*6 tWR*7 tCW*5 CS1 tCW*5 CS2 tWP*4 WE tDW tDH Valid data Din High impedance Dout 11 HM628100I Series Low VCC Data Retention Characteristics (Ta = –40 to +85°C) Parameter Symbol Min Typ* 2 Max Unit Test conditions*1 VCC for data retention VDR 2.0 — — V Vin ≥ 0 V (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS2 ≥ V CC – 0.2 V CS1 ≥ V CC – 0.2 V Data retention current I CCDR — 0.8 10 µA VCC = 3.0 V, Vin ≥ 0 V (1) 0 V ≤ CS2 ≤ 0.2 V or (2) CS2 ≥ V CC – 0.2 V, CS1 ≥ V CC – 0.2 V Chip deselect to data retention time t CDR 0 — — ns See retention waveform Operation recovery time tR t RC* 3 — — ns Notes: 1. CS2 controls address buffer, WE buffer, CS1 buffer, OE buffer and Din buffer. If CS2 controls data retention mode, Vin levels (address, WE, OE, CS1, I/O) can be in the high impedance state. If CS1 controls data retention mode, CS2 must be CS2 ≥ V CC – 0.2 V or 0 V ≤ CS2 ≤ 0.2 V. The other input levels (address, WE, OE, I/O) can be in the high impedance state. 2. Typical values are at VCC = 3.0 V, Ta = +25˚C and not guaranteed. 3. t RC = read cycle time. 12 HM628100I Series Low V CC Data Retention Timing Waveform (1) (CS1 Controlled) t CDR Data retention mode tR VCC 4.5 V 2.2 V VDR CS1 0V CS1 ≥ VCC – 0.2 V Low V CC Data Retention Timing Waveform (2) (CS2 Controlled) t CDR Data retention mode tR VCC 4.5 V CS2 VDR 0.8 V 0 V < CS2 < 0.2 V 0V 13 HM628100I Series Package Dimensions HM628100LTTI Series (TTP-44DE) As of January, 2002 Unit: mm 18.41 18.81 Max 23 10.16 44 0.80 *0.27 ± 0.07 0.25 ± 0.05 22 0.80 0.13 M 11.76 ± 0.20 1.005 Max *Dimension including the plating thickness Base material dimension 14 0.13 ± 0.05 0.10 *0.145 ± 0.05 0.125 ± 0.04 1.20 Max 0˚ – 5˚ 0.50 ± 0.10 Hitachi Code JEDEC JEITA Mass (reference value) TTP-44DE — — 0.43 g 0.68 1 HM628100I Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201,D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright C Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 15