ST 2SB772T PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V -IC 3 A -IC 7 A -IB 0.6 A Total Power Dissipation @ TC = 25 OC PD 10 W Total Power Dissipation @ TA = 25 C PD 1.0 W TJ, Ts - 65 to + 150 Collector Current - DC Collector Current - Pulse 1) Base Current - DC O Operating and Storage Junction Temperature Range 1) C O PW=10ms, Duty Cycle ≤ 50% Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 30 60 100 160 200 - 120 200 320 400 - Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 30 - - V Collector Base Breakdown Voltage at -IC = 1 mA -V(BR)CBO 40 - - V Emitter Base Breakdown Voltage at -IE = 1 mA -V(BR)EBO 5 - - V -ICBO - - 1 µA -IEBO - - 1 µA -VCE(sat) - - 0.5 V -VBE(sat) - - 2 V CO - 55 - pF fT - 80 - MHz DC Current Gain at -VCE = 2 V, -IC = 20 mA at -VCE = 2 V, -IC = 1 A Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 3 V Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Base Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Current Gain Bandwidth Product at -IC = 100 mA, -VCE = 5 V R Q P E SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 25/05/2006