Formosa MBR0520-M Chip schottky barrier diodes - silicon epitaxial planer type Datasheet

Formosa
MS
MBR0520-M THRU MBR05100-M
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Features
SOD-123
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
For surface mounted applications.
0.071(1.8)
0.055(1.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.126(3.2)
0.110(2.8)
Low leakage current.
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
Mechanical data
Case : Molded plastic, JEDEC SOD-123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
Forward rectified current
See Fig.1
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
0.5
A
IFSM
15
A
0.5
mA
10
Junction to ambient
Diode junction capacitance
Rq JC
f=1MHz and applied 4vDC reverse voltage
Storage temperature
MARKING
CODE
*1
V RMS
*2
VR
*3
(V)
(V)
(V)
MBR0520-M
02
20
14
20
MBR0530-M
03
30
21
30
MBR0540-M
04
40
28
40
MBR0550-M
05
50
35
50
MBR0560-M
06
60
42
60
MBR0580-M
08
80
56
80
MBR05100-M
01
100
70
100
VF
*4
120
-55
mA
o
98
CJ
TSTG
V RRM
TYP.
IR
VR = VRRM TA = 125o C
Thermal resistance
SYMBOLS
MIN.
C / w
pF
+150
o
C
Operating
temperature
(V)
(o C)
0.45
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.65
-55 to +150
0.80
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (MBR0520-M THRU MBR05100-M)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARD
50
0M
-M
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
BR
05
40
M
~M
M
05
60
-
10
40
0
M
~M
BR
05
05
0
05
20
-
BR
~M
-M
BR
~M
-M
0.1
-M
00
51
50
-
50
20
0.2
10
M
BR
05
05
0.3
M
BR
05
R
MB
0.4
INSTANTANEOUS FORWARD CURRENT,(A)
M
0.5
R
MB
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
0.6
1.0
BR
M
0.5
05
80
0
BR
~M
-M
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
15
.01
12
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
9
8.3ms Single Half
Tj=25 C
Sine Wave
6
JEDEC method
3
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
350
300
250
200
150
100
10
1.0
Tj=75 C
.1
Tj=25 C
50
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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