UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=250V. *Complementary to BF423. APPLICATIONS * High voltage application. * Monitor equipment application. 1 TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETERS SYMBOL RATINGS UNIT VCBO VCEO VEBO Ic IcP IB Pc Tj Tstg 250 250 5 50 100 50 625 150 -65~+150 V V V mA mA mA mW °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector current (DC) collector current (Peak) base current Collector Power dissipation Junction temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETERS Collector Cut-Off Current Emitter Cut-Off Current DC current gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition frequency Reverse Transfer Capacitance UTC SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cre CONDITIONS VCB= 200V, IE=0 VCB=-200V, IE=0, Tj=150°C VEB= 5V, Ic=0 VCE=20V, Ic=25mA Ic= 30mA, IB= 5mA VCE=-20V,Ic=25mA VCE= 10V ,Ic= 10mA VCB= 30V, IE=0, f=1MHz MIN. TYP. MAX. UNIT 10 10 50 nA µA nA 0.6 V V MHz pF 50 0.75 60 UNISONIC TECHNOLOGIES CO. LTD 1.6 1 QW-R201-063,A UTC BF422 CHARACTERISTICS 1.2 1.6 0.8 0.6 40 0.4 0.3 30 0.2 20 0.15 0.1 IB=0.05mA 10 0 4 8 12 16 20 24 10 5 10 0 0.3 28 Ta=-25℃ 50 30 10 0 0.3 1 10 3 30 100 COLLECTOR OUTPUT CAPACITANCE, Cob(pF) REVERSE TRANSFER CAPACITANCE, Cre(pF) VCE(sat)-Ic COMMON EMITTER Ta=25℃ 1 0.5 0.3 Ta=100℃ 0.1 0.05 0.03 Ta=25℃ Ta=-25℃ 0.01 -0.3 1 3 10 30 COLLECTOR CURRENT ,Ic(mA) COLLECTOR-EMITTER SATURATING VOLTAGE, VCE(sat) (V) COLLECTOR CURRENT, Ic (mA) 2 100 IE=0 f=1MHz Ta=25℃ 6 4 Cob 2 0 Cre 0 40 80 120 160 200 240 COLLECTOR-BASE VOLTAGE, VCB(V) UTC 30 100 COMMON EMITTER Ta=25℃ 1 0.5 0.3 Ic/IB=10 0.1 5 0.05 0.03 2 0.01 -0.3 1 10 3 30 100 COLLECTOR CURRENT, Ic (mA) 50 40 Ic-VBE COMMON EMITTER VCE=10V -30 -20 -10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 BQSE-EMITTER VOLTAGE, VBE (V) Cob,Cre-VCB 8 10 VCE(sat)-Ic 2 COLLECTOR CURRENT, Ic (mA) 10 3 Ta=10 0℃ 100 COLLECTOR-EMITTER SATURATING VOLTAGE, VCE(sat) COMMON EMITTER VCE=10V 280 TRANSITION FREQUENCY ,fT(MHz) DC CURRENT GAIN, hFE hFE-Ic Ta=100℃ Ta=25℃ 1 COLLECTOR CURRENT, IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 500 300 VCE=20V 50 30 0 0 hFE-Ic 500 COMMON 300 EMITTER Ta=25℃ 100 Ta=-25℃ COMMON 50 EMITTER Ta=25℃ DC CURRENT GAIN, hFE COLLECTOR CURRENT, Ic (mA) Ic-VCE(LOW VOLTAGE REGION) 60 Ta=25℃ .TYPICAL NPN EPITAXIAL SILICON TRANSISTOR fT-Ic 500 COMMON EMITTER 300 Ta=25℃ VCE=20V 100 50 30 10 0.3 VCE=10V 1 3 10 30 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-063,A UTC BF422 NPN EPITAXIAL SILICON TRANSISTOR 1000 200 Ic MAX.(PULSED)* 1m 800 600 400 200 0 0 40 80 120 160 Ambient Temperature, Ta(℃) 200 50 30 10 DC OP E 10 0m RA TI ON s s s Collector Current, Ic (mA) 100 m 10 COLLECTOR POWER DISSIPATION, Pc (mW) Safe Operating Area Pc-Ta 5 *SINGLE NONREPETITIVE 3 PULSE Ta=25℃ CURVES MUST BE DERATED LINEARLY 1 WITH INCREASE IN TEMPERATURE 0.5 100 10 30 300 3 Collector Emitter Voltage, VCE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-063,A