MOSFET SMD Type P-Channel MOSFET AO3413 (KO3413) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 80mΩ (VGS =-4.5V) 1 0.55 ● ID =-3 A (VGS =-4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-20V 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 100mΩ (VGS =-2.5V) +0.2 1.1 -0.1 ● RDS(ON) ＜ 130mΩ (VGS =-1.8V) 0-0.1 +0.1 0.68 -0.1 1. Gate D 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM Ta = 25℃ Ta = 70℃ t ≤ 10s Steady-State PD RthJA RthJL Unit V -3 -2.4 A -15 1.4 0.9 W 90 125 ℃/W 80 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO3413 (KO3413) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions Min Typ -20 ID=-250μA, VGS=0V VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±8V -0.4 VDS=VGS ID=-250μA RDS(On) VGS=-4.5V, ID=-3A Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs VGS=-2.5V, ID=-2.6A VGS=-4.5V, VDS=-5V VDS=-5V, ID=-3A 12 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-3A 15 23 11 Turn-Off DelayTime td(off) IS VSD VGS=-4.5V, VDS=-10V, RL=3.3Ω, RGEN=6Ω Marking AD* www.kexin.com.cn 36 ns 53 56 IF=-3A, dI/dt=100A/μs IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Ω nC 1.2 tr Qrr pF 8.5 Turn-On Rise Time Maximum Body-Diode Continuous Current 745 70 7.2 Body Diode Reverse Recovery Charge S 80 2.1 Diode Forward Voltage 2 A 560 VGS=0V, VDS=-10V, f=1MHz mΩ 130 Qgd trr V -15 td(on) Body Diode Reverse Recovery Time -1 100 Turn-On DelayTime tf nA 80 Gate Drain Charge Turn-Off Fall Time uA ±100 115 TJ=125℃ VGS=-1.8V, ID=-1A On state drain current Unit V VGS=-4.5V, ID=-3A Static Drain-Source On-Resistance Max 37 49 27 nC -1.4 A -1 V MOSFET SMD Type P-Channel MOSFET AO3413 (KO3413) ■ Typical Characterisitics 25 20 -3.0V -4.5V -2.5V 15 15 -ID(A) -ID (A) 20 -2.0V 10 10 125°C 5 VGS=-1.5V 5 VDS=-5V 25°C 0 0 0 1 2 3 4 0 5 -VDS (Volts) Figure 1: On-Region Characteristics Normalized On-Resistance 130 RDS(ON) (mΩ Ω) 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics 3 1.6 150 VGS=-1.8V 110 90 VGS=-2.5V 70 VGS=-4.5V 50 VGS=-2.5V ID=-2.6A 1.4 VGS=-4.5V ID=-3A 1.2 VGS=-1.8V ID=-1A 1 0.8 0 2 4 6 8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 180 ID=-3A 160 1E+01 140 1E+00 120 -IS (A) RDS(ON) (mΩ Ω) 0.5 125°C 100 80 125°C 1E-01 1E-02 25°C 1E-03 60 25°C 1E-04 40 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO3413 (KO3413) ■ Typical Characterisitics 5 1200 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-10V ID=-3A 3 2 1 1000 800 Ciss 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 1000 RDS(ON) limited 10µs 1ms 1.00 10ms 0.1s TJ(Max)=150°C TA=25°C 0.10 TJ(Max)=150°C TA=25°C 1 0.1 0.01 0.1 1 -VDS (Volts) 10 0.00001 100 10 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient . Figure 9: Maximum Forward Biased Safe Operating Area Zθ JA Normalized Transient Thermal Resistance 20 10 1s DC 15 100 100µs Power (W) -ID (Amps) 10.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) 4 www.kexin.com.cn 100 1000