CSD17313Q2 www.ti.com SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFET PRODUCT SUMMARY FEATURES 1 • • • • • • • Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Pb Free RoHS Compliant Halogen Free SON 2-mm × 2-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 2.1 nC Qgd Gate Charge Gate to Drain RDS(on) VGS(th) nC 31 mΩ VGS = 4.5V 26 mΩ VGS = 8V 24 mΩ Threshold Voltage 1.3 V ORDERING INFORMATION Device Package Media CSD17313Q2 SON 2-mm × 2-mm Plastic Package 13-Inch Reel APPLICATIONS • • Drain to Source On Resistance 0.4 VGS = 3V DC-DC Converters Battery and Load Management Applications Qty Ship 3000 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE UNIT The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 5 A Continuous Drain Current(1) 5 A IDM Pulsed Drain Current, TA = 25°C(2) 20 A Top View PD Power Dissipation 2.3 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, Single Pulse, ID = 19A, L = 0.1mH, RG = 25Ω 18 mJ D TA = 25°C unless otherwise stated 1 6 D 5 D 4 S D D 2 G 3 S ID (1) Package Limited (2) Pulse duration ≤300ms, duty cycle ≤2% P0108-01 Text For Spacing RDS(on) vs VGS Text For Spacing GATE CHARGE 8 ID = 4A 70 VGS - Gate-to-Source Voltage - V RDS(on) - On-State Resistance - mΩ 80 60 T C = 125°C 50 40 30 20 T C = 25°C 10 ID = 4A VDS = 15V 7 6 5 4 3 2 1 0 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 0 0.5 1 1.5 2 2.5 Qg - Gate Charge - nC 3 3.5 4 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated CSD17313Q2 SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage VGS = 0V, VDS = 24V IGSS Gate to Source Leakage VDS = 0V, VGS = +10 / -8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 30 0.9 V 1 mA 100 nA 1.3 1.8 V VGS = 3V, ID = 4A 31 42 mΩ VGS = 4.5V, ID = 4A 26 32 mΩ VGS = 8V, ID = 4A 24 30 mΩ VDS = 15V, ID = 4A 16 S Dynamic Characteristics Ciss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz 260 340 pF Coss Output Capacitance 140 180 pF Crss Reverse Transfer Capacitance 13 17 pF RG Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (4.5V) 2.1 2.7 nC Qgd Gate Charge – Gate to Drain Qgs Gate Charge Gate to Source Qg(th) Gate Charge at Vth Qoss Output Charge td(on) 0.4 nC 0.7 nC 0.3 nC 3.8 nC Turn On Delay Time 2.8 ns tr Rise Time 3.9 ns td(off) Turn Off Delay Time 4.2 ns tf Fall Time 1.3 ns VDS = 15V, ID = 4A VDS = 13.5V, VGS = 0V VDS = 15V, VGS = 4.5V, ID = 4A, RG = 2Ω Diode Characteristics VSD Diode Forward Voltage ISD = 4A, VGS = 0V Qrr Reverse Recovery Charge trr Reverse Recovery Time VDD= 13.5V, IF = 4A, di/dt = 300A/ms 0.85 1 V 6.4 nC 12.9 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) TYP MAX UNIT RqJC Thermal Resistance Junction to Case (1) PARAMETER 7.4 °C/W RqJA Thermal Resistance Junction to Ambient (1) (2) 67 °C/W (1) (2) 2 MIN RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated CSD17313Q2 www.ti.com SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 Max RqJA = 67°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. G1 D1 S1 Max RqJA = 228°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. G1 S1 D1 M0179-01 M0180-01 Text Added For Spacing Text Added For Spacing Text Added For Spacing Text Added For Spacing TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) ZqJA - Normalized Thermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 P 0.02 0.01 t1 0.01 t2 Typical RqJA = 182°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 tp - Pulse Duration - s 10 100 1k G012 Figure 1. Transient Thermal Impedance Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 3 CSD17313Q2 SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING 10 9 9 8 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A TEXT ADDED FOR SPACING 10 VGS = 8V 7 VGS = 4.5V 6 VGS = 3.5V 5 4 VGS = 3V 3 VGS = 2.5V 2 0 0.2 0.4 0.6 0.8 VDS - Drain-to-Source Voltage - V T C = 125°C 6 5 T C = 25°C 4 3 T C = -55°C 2 1 1 1.2 1.4 G001 1.6 1.8 2 2.2 2.4 2.6 VGS - Gate-to-Source Voltage - V 2.8 3 G002 Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 0.7 8 ID = 4A VDS = 15V 7 f = 1MHz VGS = 0V 0.6 6 C - Capacitance - nF VGS - Gate-to-Source Voltage - V 7 0 0 5 4 3 2 0.5 Coss = Cds + Cgd 0.4 Ciss = Cgd + Cgs 0.3 0.2 Crss = Cgd 0.1 1 0 0 0 0.5 1 1.5 2 2.5 Qg - Gate Charge - nC 3 3.5 4 0 10 15 20 VDS - Drain-to-Source Voltage - V 25 Figure 4. Gate Charge Figure 5. Capacitance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 30 G004 80 RDS(on) - On-State Resistance - mΩ ID = 250µA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -75 5 G003 1.6 VGS(th) - Threshold Voltage - V 8 1 1 ID = 4A 70 60 T C = 125°C 50 40 30 20 T C = 25°C 10 0 -25 25 75 T C - Case Temperature - °C 125 175 Figure 6. Threshold Voltage vs. Temperature 4 VDS = 5V Submit Documentation Feedback G005 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 Figure 7. On-State Resistance vs. Gate-to-Source Voltage Copyright © 2010, Texas Instruments Incorporated CSD17313Q2 www.ti.com SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 10 1.4 ID = 4A VGS = 8V ISD - Source-to-Drain Current - A Normalized On-State Resistance 1.6 1.2 1 0.8 0.6 0.4 0.2 -75 1 T C = 125°C 0.1 T C = 25°C 0.01 0.001 0.0001 -25 25 75 T C - Case Temperature - °C 125 0 175 0.4 0.6 0.8 VSD - Source-to-Drain Voltage - V Figure 8. Normalized On-State Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 10 1ms 10ms 1 11110 100ms Area Limited by RDS(on) 1s 0.1 DC Single Pulse Typical R θJA = 182°C/W (min Cu) 0.01 0.01 1 G008 100 I(AV) - Peak Avalanche Current - A IDS - Drain-to-Source Current - A 0.2 G007 0.1 1 10 VDS - Drain-to-Source Voltage - V 100 T C = 25°C 10 T C = 125°C 1 0.01 0.1 1 t(AV) - Time in Avalanche - ms G009 Figure 10. Maximum Safe Operating Area 10 G010 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING IDS - Drain-to-Source Current - A 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 T C - Case Temperature - °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 CSD17313Q2 SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA Q2 Package Dimensions D2 D K3 K1 K K2 4 4 5 6 8 K4 E 7 E1 E2 5 E3 6 Pin 1 Dot 2 3 3 L 1 Top View 2 1 Pin 1 ID e b D1 Pinout A A1 C Bottom View Source 4, 7 Gate 3 Drain 1, 2, 5, 6, 8 Front View M0175-02 DIM MILLIMETERS MIN NOM MAX MIN NOM MAX A 0.700 0.750 0.800 0.028 0.030 0.032 A1 0.000 0.050 0.000 b 0.250 0.350 0.010 0.300 C 0.203 TYP D 2.000 TYP D1 0.900 0.950 D2 0.300 TYP E 2.000 TYP E1 0.900 1.000 0.002 0.012 0.080 TYP 1.000 0.036 0.038 0.080 TYP 1.100 0.036 0.040 0.280 TYP 0.0112 TYP 0.470 TYP 0.0188 TYP e 0.650 BSC 0.026 TYP K 0.280 TYP 0.0112 TYP K1 0.350 TYP 0.014 TYP K2 0.200 TYP 0.008 TYP K3 0.200 TYP 0.008 TYP 0.470 TYP 0.200 Submit Documentation Feedback 0.25 0.040 0.012 TYP E3 L 0.014 0.008 TYP E2 K4 6 INCHES 0.044 0.0188 TYP 0.300 0.008 0.010 0.012 Copyright © 2010, Texas Instruments Incorporated CSD17313Q2 www.ti.com SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 Recommended PCB Pattern 1.40 0.85 1.05 0.22 2.30 1.10 0.65 TYP 1 0.46 0.40 TYP 0.25 M0167-01 Note: All dimensions are in mm, unless otherwise specified. For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing through PCB Layout Techniques. Q2 Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 1.00 ±0.25 1.00 ±0.05 2.30 ±0.05 10° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 2.30 ±0.05 10° Max M0168-01 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket 2. Cumulative tolerance of 10 sprocket holes is ±0.20 3. Other material available 4. Typical SR of form tape Max 108 OHM/SQ 5. All dimensions are in mm, unless otherwise specified. Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 7 CSD17313Q2 SLPS260B – MARCH 2010 – REVISED OCTOBER 2010 www.ti.com REVISION HISTORY Changes from Original (March 2010) to Revision A • Changed Qrr - Reverse Recovery Charge From: 10.2 nC To: 6.4 nC .................................................................................. 2 Changes from Revision A (March 2010) to Revision B • 8 Page Page Deleted the Package Marking Information section ............................................................................................................... 8 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Audio www.ti.com/audio Communications and Telecom www.ti.com/communications Amplifiers amplifier.ti.com Computers and Peripherals www.ti.com/computers Data Converters dataconverter.ti.com Consumer Electronics www.ti.com/consumer-apps DLP® Products www.dlp.com Energy and Lighting www.ti.com/energy DSP dsp.ti.com Industrial www.ti.com/industrial Clocks and Timers www.ti.com/clocks Medical www.ti.com/medical Interface interface.ti.com Security www.ti.com/security Logic logic.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Power Mgmt power.ti.com Transportation and Automotive www.ti.com/automotive Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com Wireless www.ti.com/wireless-apps RF/IF and ZigBee® Solutions www.ti.com/lprf TI E2E Community Home Page e2e.ti.com Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2011, Texas Instruments Incorporated