BAS19L, BAS20L, BAS21L, BAS21DW5 High Voltage Switching Diode Features www.onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S and NSV Prefixes for Automotive and Other Applications HIGH VOLTAGE SWITCHING DIODE Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable SOT−23 MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Value VR Continuous Forward Current SC−88A 5 1 CATHODE ANODE VRRM Vdc 200 IFSM 2 A Repetitive Peak Forward Current (Pulse Train: TON = 1 s, TOFF = 0.5 s) IFRM 0.6 A TJ, Tstg −55 to +150 °C PD 385 mW ESD HM < 500 V MM < 400 V Power Dissipation (Note 1) Electrostatic Discharge Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. 3 ANODE MARKING DIAGRAMS mAdc Peak Forward Surge Current (1/2 Cycle, Sine Wave, 60 Hz) Junction and Storage Temperature Range 4 CATHODE 120 200 250 IF 1 ANODE Vdc 120 200 250 BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 3 CATHODE Unit 3 3 Jx M G G 1 2 SOT−23 (TO−236) CASE 318 STYLE 8 2 1 5 Jx M G G 3 1 SC−88A (SOT−353) CASE 419A 4 1 2 3 x = P, R, or S P = BAS19L R = BAS20L S = BAS21L or BAS21DW5 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon the manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 1999 November, 2016 − Rev. 18 1 Publication Order Number: BAS19LT1/D BAS19L, BAS20L, BAS21L, BAS21DW5 THERMAL CHARACTERISTICS (SOT−23) Characteristic Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient (SOT−23) Symbol Max Unit PD 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 mW/°C 417 °C/W −55 to +150 °C Symbol Max Unit PD 385 mW 328 3.0 °C/W mW/°C TJmax 150 °C TJ, Tstg −55 to +150 °C RJA Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C PD Thermal Resistance Junction−to−Ambient RJA Junction and Storage Temperature Range TJ, Tstg THERMAL CHARACTERISTICS (SC−88A) Characteristic Power Dissipation (Note 4) Thermal Resistance − Junction−to−Ambient Derate Above 25°C RJA Maximum Junction Temperature Operating Junction and Storage Temperature Range 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 150 Vdc) (VR = 200 Vdc) (VR = 100 Vdc, TJ = 150°C) (VR = 150 Vdc, TJ = 150°C) (VR = 200 Vdc, TJ = 150°C) BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 Reverse Breakdown Voltage (IBR = 100 Adc) (IBR = 100 Adc) (IBR = 100 Adc) BAS19 BAS20 BAS21 Min Max − − − − − − 0.1 0.1 0.1 100 100 100 120 200 250 − − − − − 1.0 1.25 Unit Adc IR V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BAS19L, BAS20L, BAS21L, BAS21DW5 820 +10 V 2.0 k IF 100 H tr 0.1 F tp IF t trr 10% t 0.1 F 90% D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR IR(REC) = 3.0 mA IR VR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at IR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 150°C 100 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 150°C 125°C 85°C 10 55°C 25°C 1.0 -55°C 125°C 1.0 85°C 0.1 55°C 0.01 25°C -40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (V) 0.8 0.9 0.001 20 1.0 50 80 Figure 2. VF vs. IF IFSM, FORWARD SURGE MAX CURRENT (A) CD, DIODE CAPACITANCE (pF) Cap 1.4 1.2 1.0 0.8 0.6 0 1 2 3 4 5 230 260 Figure 3. IR vs. VR 1.6 0.4 200 170 110 140 VR, REVERSE VOLTAGE (V) 6 7 30 Based on square wave currents TJ = 25°C prior to surge 25 20 15 10 5 0 0.001 8 0.01 0.1 1 10 100 VR, REVERSE VOLTAGE (V) tp, PULSE ON TIME (ms) Figure 4. Capacitance Figure 5. Forward Surge Current www.onsemi.com 3 1000 BAS19L, BAS20L, BAS21L, BAS21DW5 ORDERING INFORMATION Package Shipping† BAS19LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAS19LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel NSVBAS19LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BAS20LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAS20LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel NSVBAS20LT3G* SOT−23 (Pb−Free) 10000 / Tape & Reel SBAS20LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BAS21LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SBAS21LT1G* SOT−23 (Pb−Free) 3000 / Tape & Reel BAS21LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel SBAS21LT3G* SOT−23 (Pb−Free) 10000 / Tape & Reel BAS21DW5T1G SC−88A (Pb−Free) 3000 / Tape & Reel SBAS21DW5T1G* SC−88A (Pb−Free) 3000 / Tape & Reel SBAS21DW5T3G* SC−88A (Pb−Free) 10000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 4 BAS19L, BAS20L, BAS21L, BAS21DW5 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS www.onsemi.com 5 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° BAS19L, BAS20L, BAS21L, BAS21DW5 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 0.2 (0.008) D 5 PL B M INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 DIM A B C D G H J K N S 3 M N MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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