PHILIPS BF1101WR N-channel dual-gate mos-fet Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF1101; BF1101R; BF1101WR
N-channel dual-gate MOS-FETs
Product specification
Supersedes data of 1999 Feb 01
1999 May 14
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
PINNING
FEATURES
• Short channel transistor with high
forward transfer admittance to input
capacitance ratio
PIN
DESCRIPTION
1
source
• Low noise gain controlled amplifier
up to 1 GHz
2
drain
3
gate 2
• Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
4
gate 1
handbook, 2 columns
3
4
2
1
Top view
MSB035
BF1101R marking code: NCp.
Fig.2
APPLICATIONS
Simplified outline
(SOT143R).
• VHF and UHF applications with
3 to 7 V supply voltage, such as
television tuners and professional
communications equipment.
handbook, 2 columns
4
3
3
fpage
4
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
1
2
Top view
2
MSB014
BF1101 marking code: NDp.
Fig.1
1
Top view
MSB842
BF1101WR marking code: NC.
Simplified outline
(SOT143B).
Fig.3
Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
7
V
ID
drain current
−
−
30
mA
Ptot
total power dissipation
−
−
200
mW
yfs
forward transfer admittance
25
30
−
mS
Cig1-ss
input capacitance at gate 1
−
2.2
2.7
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
25
35
fF
F
noise figure
f = 800 MHz
−
1.7
2.5
dB
Xmod
cross-modulation
input level for k = 1% at
40 dB AGC
100
−
−
dBµV
Tj
operating junction temperature
−
−
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
7
V
ID
drain current
−
30
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
Ptot
total power dissipation
Tstg
Tj
−
±10
mA
−
200
mW
storage temperature
−65
+150
°C
operating junction temperature
−
+150
°C
Ts ≤ 110 °C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
MGL615
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
50
100
150
200
Ts (°C)
Fig.4 Power derating curve.
1999 May 14
3
VALUE
UNIT
200
K/W
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VG1-S = VG2-S = 0; ID = 10 µA
7
−
V
V(BR)G1-SS gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 10 mA
7
16
V
V(BR)G2-SS gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 10 mA
7
16
V
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(BR)DSS
drain-source breakdown voltage
V(F)S-G1
forward source-gate 1 voltage
V(F)S-G2
forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S (th)
gate 1-source threshold voltage
VG2-S = 4 V; VDS = 5 V; ID = 100 µA
0.3
1.0
V
VG2-S (th)
gate 2-source threshold voltage
VG1-S = 5 V; VDS = 5 V; ID = 100 µA
0.3
1.2
V
IDSX
drain-source current
VG2-S = 4 V; VDS = 5 V; RG1 = 120 kΩ;
note 1
8
16
mA
IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
−
50
nA
IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 4 V
−
20
nA
Note
1. RG1 connects G1 to VGG = 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
pulsed; Tj = 25 °C
25
30
40
mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
−
2.2
2.7
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
−
1.6
−
pF
Coss
output capacitance
f = 1 MHz
−
1.2
−
pF
Crss
reverse transfer capacitance f = 1 MHz
−
25
35
fF
F
noise figure
f = 800 MHz; YS = YS opt
−
1.7
2.5
dB
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
85
−
−
dBµV
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
100
−
−
dBµV
Note
1. Measured in test circuit of Fig.21.
1999 May 14
4
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
MGS299
20
handbook, halfpage
ID
(mA)
MGS300
20
handbook, halfpage
3V
VG2-S = 4 V
ID
(mA)
3.5 V
16
VG1-S = 1.6 V
16
2.5 V
1.5 V
12
12
2V
1.4 V
8
8
1.3 V
1.2 V
1.5 V
4
4
1.1 V
1V
1V
0
0
0
0.4
0.8
1.2
1.6
2
0
2
4
6
VG1-S (V)
VDS (V)
8
VG2-S = 4 V.
Tj = 25 °C.
VDS = 5 V.
Tj = 25 °C.
Fig.5 Transfer characteristics; typical values.
Fig.6 Output characteristics; typical values.
MGS301
100
MGS302
40
handbook, halfpage
handbook, halfpage
VG2-S = 4 V 3.5 V
I G1
(µA)
y fs
(mS)
3V
80
VG2-S = 4 V
3.5 V
30
3V
60
2.5 V
20
40
2.5 V
2V
10
20
0
2V
0
0
0.5
1
1.5
2
VG1-S (V)
2.5
0
VDS = 5 V.
Tj = 25 °C.
Fig.7
1999 May 14
4
8
12
16
20
I D (mA)
VDS = 5 V.
Tj = 25 °C.
Gate 1 current as a function of gate 1
voltage; typical values.
Fig.8
5
Forward transfer admittance as a
function of drain current; typical values.
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
MGS303
20
MGS304
15
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
16
10
12
8
5
4
0
0
0
10
20
30
40
50
I G1 (µA)
0
Drain current as a function of gate 1 current;
typical values.
ID
(mA)
3
4
5
VGG (V)
Fig.10 Drain current as a function of gate 1
supply voltage (= VGG); typical values.
MGS305
20
handbook, halfpage
2
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.9
1
R G1 = 47 kΩ 68 kΩ
MGS306
16
handbook, halfpage
82 kΩ
VGG = 5 V
ID
(mA)
100 kΩ
120 kΩ
16
4.5 V
12
150 kΩ
4V
3.5 V
180 kΩ
12
3V
220 kΩ
8
8
4
4
0
0
0
2
4
6
VGG = VDS (V)
8
0
4
VG2-S (V)
6
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
VG2-S = 4 V; Tj = 25 °C.
RG1 connected to VGG; see Fig.21.
Fig.11 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
1999 May 14
2
Fig.12 Drain current as a function of gate 2 voltage;
typical values.
6
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
MGS308
MGS307
40
0
gain
reduction
(dB)
−10
handbook, halfpage
handbook, halfpage
I G1
(µA)
VGG = 5 V
30
4.5 V
(3)
(2)
(1)
−20
4V
20
3.5 V
−30
3V
10
−40
−50
0
0
2
4
VG2-S (V)
6
0
1
2
3
VAGC (V)
4
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C.
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
(1) RG1 = 68 kΩ.
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
(2) RG1 = 120 kΩ.
(3) RG1 = 180 kΩ.
Fig.14 Typical gain reduction as a function of
the AGC voltage; see Fig.21.
MGS309
MGS310
120
25
handbook, halfpage
handbook, halfpage
ID
(mA)
Vunw
(dBµV)
20
110
(1)
15
(2)
100
(1)
(2)
(3)
(3)
10
90
5
80
0
0
10
20
30
40
50
gain reduction (dB)
0
VDS = 5 V; VGG = 5 V; f = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
(1) RG1 = 68 kΩ.
(2) RG1 = 120 kΩ.
20
30
40
50
gain reduction (dB)
VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb = 25 °C.
(3) RG1 = 180 kΩ.
(1) RG1 = 68 kΩ.
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values; see Fig.21.
1999 May 14
10
(2) RG1 = 120 kΩ.
(3) RG1 = 180 kΩ.
Fig.16 Drain current as a function of gain reduction;
typical values; see Fig.21.
7
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
MGS311
102
handbook, halfpage
MGS312
102
handbook, halfpage
yis
(mS)
ϕ rs
−102
ϕ rs
(deg)
|yrs |
(mS)
|yrs|
10
−10
10
bis
1
g is
10 −1
10
102
f (MHz)
1
10
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
102
f (MHz)
−1
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
Fig.17 Input admittance as a function of frequency;
typical values.
MGS313
102
handbook, halfpage
|yfs |
(mS)
|y fs|
ϕ fs
10
−102
MGS314
10
handbook, halfpage
ϕ fs
(deg)
yos
(mS)
bos
−10
1
g os
1
10
−1
102
f (MHz)
10 −1
10
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
f (MHz)
103
VDS = 5 V; VG2 = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
1999 May 14
102
Fig.20 Output admittance as a function of
frequency; typical values.
8
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
VAGC
handbook, full pagewidth
R1
10 kΩ
C1
4.7 nF
C3
4.7 nF
C2
RGEN
50 Ω
R2
50 Ω
RL
50 Ω
L1
≈ 2.2 µH
DUT
C4
4.7 nF
RG1
4.7 nF
VGG
VI
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1
f
(MHz)
Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C
S11
S21
S12
S22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.987
−4.1
2.922
175.0
0.001
87.6
0.990
−2.2
100
0.985
−8.1
2.908
170.3
0.001
86.1
0.989
−4.3
200
0.976
−16.1
2.875
160.8
0.003
83.3
0.985
−8.5
300
0.963
−23.9
2.820
157.6
0.004
80.4
0.982
−12.6
400
0.949
−31.6
2.762
142.6
0.005
78.2
0.977
−16.8
500
0.933
−38.8
2.665
134.1
0.005
77.8
0.972
−20.8
600
0.916
−45.7
2.591
125.7
0.005
78.9
0.967
−24.7
700
0.897
−52.2
2.498
117.7
0.006
81.8
0.961
−28.5
800
0.877
−58.4
2.410
109.6
0.005
89.1
0.957
−32.2
900
0.856
−64.5
2.318
101.6
0.006
97.1
0.950
−35.8
1000
0.832
−70.3
2.214
94.2
0.006
110.4
0.946
−39.6
Table 2
Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
Rn
(Ω)
800
1.5
0.715
58.3
37.85
1999 May 14
9
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1999 May 14
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-03-10
SOT143R
1999 May 14
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1999 May 14
EUROPEAN
PROJECTION
12
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 14
13
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
NOTES
1999 May 14
14
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1101; BF1101R; BF1101WR
NOTES
1999 May 14
15
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Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/02/pp16
Date of release: 1999 May 14
Document order number:
9397 750 05993
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