isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD933/935/937/939/941 DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934/936/938/940/942 APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE BD933 45 BD935 60 BD937 100 BD939 120 BD941 140 BD933 45 BD935 60 BD937 80 BD939 100 BD941 120 UNIT V V Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 7 A 0.5 A 30 W 150 ℃ -65~150 ℃ IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 4.17 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BD933 45 BD935 60 BD937 IC= 100mA ; IB= 0 TYP. MAX V 80 BD939 100 BD941 120 UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V 1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.05 1 mA ICEO Collector Cutoff Current VCE= VCEOmax; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 150mA ; VCE= 2V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 2V 25 Current-Gain—Bandwidth Product IC= 250mA ; VCE= 10V 3 fT B 250 MHz Switching Times ton Turn-On Time toff Turn-Off Time 0.4 1.0 μs 1.5 3.0 μs IC= 1.0A; IB1= -IB2= 0.1A isc Website：www.iscsemi.cn 2