Rohm MTZJ22B Zener diode Datasheet

MTZJ8.2B
Diodes
Zener diode
MTZJ8.2B
zApplications
Constant voltage control
z Dimensions (Unit : mm)
TYPE NO. (BLACK)
CATHODE BAND (BLACK)
zFeatures
1) Glass sealed envelope. (MSD)
2) High reliability.
φ0.4±0.1
3.6B
T-72 29±1
2.7±0.3
T-72 29±1
φ1.8±0.2
zConstruction
Silicon planer
ROHM : MSD
JEDEC : DO-34
EX. MTZJ3.6B
zTaping specification (Unit : mm)
H2
BLUE
A
H2
BROWN
Symbol
E
Standard dimension
value(mm)
T-72
A
B
T-77
T-72
T-77
T-72
C
1.0 max.
T-77
T-72
D
0
T-77
T-72
1/2A±1.2
E
T-77
1/2A±0.4
T-72
0.7 max.
F
T-77
0.2 max.
T-72
H1
6.0±0.5
T-77
T-72
H2
5.0±0.5
T-77
T-72
1.5 max.
|L1-L2|
T-77
0.4 max.
*H1(6mm):BROWN
B
C
L2
L1
H1
F
D
cf : cumulative pitch tolerance with 20 pitch than ±1.5mm
52.4±1.5
+0.4
26.0
0
5.0±0.5
5.0±0.3
zAbsolute maximum ratings (Ta=25°C)
Parameter
Power dissipation
Junction temperature
Storage temperature
Symbol
P
Tj
Tstg
Limits
500
175
-65 to +175
Unit
mW
℃
℃
Rev.D
1/4
MTZJ8.2B
Diodes
zElectrical characteristics curves (Ta=25°C)
Symbol
TYP.
Zener voltage :Vz(V)
Operating
resistance :Zz(Ω)
Rising operating
resistance:Zz(Ω)
Reverse current
:IR(uA)
MIN.
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
Iz(mA)
MAX.
MTZJ 3.6B 3.600
3.845
5.0
100
5.0
1000
10.0
1.0
MTZJ 3.9B 3.890
4.160
5.0
100
5.0
1000
5.0
1.0
MTZJ 4.3B 4.170
5.0
5.0
5.0
4.430
100
1000
1.0
MTZJ 4.7B 4.550
5.0
5.0
5.0
4.800
80
900
0.5
MTZJ 5.1B 4.940
5.0
5.0
5.0
5.200
70
1200
0.5
MTZJ 5.6B 5.450
5.0
5.0
5.0
5.730
40
900
0.5
MTZJ 6.2B 5.960
5.0
5.0
5.0
6.270
30
500
0.5
MTZJ 6.8B 6.490
5.0
5.0
2.0
6.830
20
150
0.5
MTZJ 7.5B 7.070
5.0
5.0
0.5
7.450
20
120
0.5
MTZJ 8.2B 7.780
5.0
5.0
0.5
8.190
20
120
0.5
MTZJ 9.1B 8.570
5.0
5.0
0.5
9.010
20
120
0.5
MTZJ 10B 9.410
5.0
5.0
0.2
9.900
20
120
0.5
MTZJ 11B 10.500
5.0
5.0
0.2
11.050
20
120
0.5
5.0
0.2
MTZJ 12B 11.440
5.0
110
0.5
12.030
25
MTZJ 13B 12.550
5.0
5.0
0.2
13.210
25
110
0.5
MTZJ 15B 13.890
5.0
5.0
0.2
14.620
25
110
0.5
MTZJ 16B 15.250
5.0
5.0
0.2
16.040
25
150
0.5
MTZJ 18B 16.820
5.0
5.0
0.2
17.700
30
150
0.5
MTZJ 20B 18.630
5.0
30
5.0
0.2
19.590
200
0.5
MTZJ 22B 20.640
5.0
5.0
0.2
30
21.710
200
0.5
MTZJ 24B 22.610
5.0
5.0
0.2
35
23.770
200
0.5
MTZJ 27B 24.970
5.0
5.0
0.2
45
26.260
250
0.5
MTZJ 30B 27.700
5.0
5.0
0.2
29.130
55
250
0.5
MTZJ 33B 30.320
5.0
5.0
0.2
31.880
65
250
0.5
MTZJ 36B 32.790
5.0
5.0
0.2
34.490
75
250
0.5
MTZJ 39B 35.360
37.190
5.0
85
5.0
250
0.5
0.2
(1 )The zener voltage(Vz) is measured 40ms after power is supplied.
(2 )The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
zType NO.
TYPE
MTZJ 3.6B
MTZJ 3.9B
MTZJ 4.3B
MTZJ 4.7B
MTZJ 5.1B
MTZJ 5.6B
MTZJ 6.2B
MTZJ 6.8B
MTZJ 7.5B
MTZJ 8.2B
MTZJ 9.1B
MTZJ 10B
MTZJ 11B
TYPE NO.
3.6B
3.9B
4.3B
4.7B
5.1B
5.6B
6.2B
6.8B
7.5B
8.2B
9.1B
10B
11B
TYPE
MTZJ 12B
MTZJ 13B
MTZJ 15B
MTZJ 16B
MTZJ 18B
MTZJ 20B
MTZJ 22B
MTZJ 24B
MTZJ 27B
MTZJ 30B
MTZJ 33B
MTZJ 36B
MTZJ 39B
VR(V)
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
30.0
TYPE NO.
12B
13B
15B
16B
18B
20B
22B
24B
27B
30B
33B
36B
39B
Rev.D
2/4
MTZJ8.2B
Diodes
10
0.1
5.1
4.7
5.6
6.8
4.3
6.2
0.01
7.5
3.9
8.2 9.1 10
11 12 13
3.6
15
16
18
20
22
24
27
30
36
33
39
0.001
0
5
10
15
20
25
30
35
40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
10000
500
REVERSE SURGE MAXIMUM
POWER:PRSM(W)
POWER DISSIPATION:Pd(mW)
600
PRSM
t
1000
400
300
200
100
0
25
50
75
100
125
100
10
1
0.001
0
150
AMBIENT TEMPERATURE:Ta(℃)
Pd-Ta CHARACTERISTICS
0.01
0.1
1
10
100
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
30
0.1
0.08
1000
Rth(j-a)
100
Rth(j-c)
0.06
20
0.04
0.02
15
0
10
-0.02
5
-0.04
0
-0.06
-5
-0.08
0
10
20
30
ZENER VOLTAGE:Vz(V)
γz-Vz CHARACTERISTICS
40
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
25
TEMP.COEFFICIENCE:γz(mV/℃)
TEMP.COEFFICIENCE:γz(%/℃)
ZENER CURRENT:Iz(mA)
1
10
Mounted on epoxy board
IM=10mA
1ms time
300us
1
0.1
0.001
IF=100mA
0.01
0.1
1
10
100
TIME:t(s)
Rth-t CHARACTERISTICS
1000
Rev.D
3/4
MTZJ8.2B
Diodes
Ta=75℃
10000
Ta=125℃
f=1MHz
Ta=-25℃
0.1
0.01
Ta=175℃
Ta=125℃
100
10
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=25℃
1
1000
Ta=175℃
1000
REVERSE CURRENT:IR (nA)
ZENER CURRENT:Iz(mA)
10
Ta=75℃
1
Ta=25℃
0.1
Ta=-25℃
0.01
100
10
0.001
0.001
7.5
8
8.5
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
9
1
2
3
4
5
0
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
8.1
8
7.9
7.8
AVE:7.882V
0.8
0.7
0.6
0.5
0.4
0.3
AVE:0.081nA
0.2
3
4
5
Ta=25℃
f=1MHz
VR=0V
n=10pcs
140
130
120
110
100
90
80
70
60
0.1
7.7
2
150
Ta=25℃
VR=5.0V
n=30pcs
0.9
REVERSE CURRENT:IR(nA)
Ta=25℃
IZ=5mA
n=30pcs
1
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1
8.2
ZENER VOLTAGE:Vz(V)
1
0
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
7
0.0001
AVE:85.1pF
50
0
Vz DISRESION MAP
IR DISRESION MAP
Ct DISRESION MAP
DYNAMIC IMPEDANCE:Zz(Ω)
100
10
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
10
Rev.D
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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Appendix1-Rev2.0
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