Anpec APM3023NVC-TR N-channel enhancement mode mosfet Datasheet

APM3023NV
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
30V/7A,
RDS(ON)=15mΩ(typ.) @ VGS=10V
RDS(ON)=22mΩ(typ.) @ VGS=5V
•
•
•
G
Super High Dense Cell Design
D
S
Reliable and Rugged
Top View of SOT-223
Lead Free Available (RoHS Compliant)
(2)
D
Applications
•
•
Switching Regulators
(1)
G
Switching Converters
S
(3)
N-Channel MOSFET
Ordering and Marking Information
P ackage C ode
V : S O T -2 2 3
O p e r a tin g J u n c tio n T e m p . R a n g e
C : - 5 5 to 1 5 0 ° C
H a n d lin g C o d e
TU : T ube
TR : Tape & R eel
L e a d F re e C o d e
L : L e a d F r e e D e v ic e B la n k : O r ig in a l D e v ic e
APM 3023N
L e a d F re e C o d e
H a n d lin g C o d e
T em p. R ange
P ackage C ode
APM 3023N V:
APM 3023N
XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
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APM3023NV
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
1.5
TJ
Maximum Junction Temperature
150
Storage Temperature Range
PD*
Power Dissipation for Single Operation
RθJA*
V
7
VGS=10V
TSTG
Unit
A
28
A
°C
-55 to 150
TA=25°C
1.47
TA=100°C
0.58
Thermal Resistance-Junction to Ambient
W
°C/W
85
Note:
2
*Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
VSD
a
a
(TA = 25°C unless otherwise noted)
Test Condition
VGS=0V, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Gate Charge Characteristics
Qg
Total Gate Charge
Typ.
Max.
30
1
30
1
Unit
V
TJ=85°C
VDS=VGS, IDS=250µA
Diode Forward Voltage
Min.
VDS=24V, VGS=0V
Gate Threshold Voltage
Drain-Source On-state Resistance
APM3023NV
1.5
µA
2
V
±100
nA
VGS=10V, IDS=7A
15
20
VGS=5V, IDS=5A
22
28
ISD=1.5A, VGS=0V
0.8
1.3
30
39
mΩ
V
b
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
VDS=15V, VGS=10V,
IDS=7A
5.8
nC
3.8
2
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APM3023NV
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Condition
APM3023NV
Min.
Typ.
Max.
Unit
b
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Notes:
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Turn-off Fall Time
Ω
2.5
830
pF
145
15
11
18
17
26
37
54
20
30
ns
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
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APM3023NV
Typical Characteristics
Drain Current
1.6
8
1.4
7
1.2
6
ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
1.0
0.8
0.6
0.4
5
4
3
2
1
0.2
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
TA=25 C,VG=10V
0
20
Tj - Junction Temperature (°C)
Normalized Transient Thermal Resistance
it
im
on
)L
s(
Rd
ID - Drain Current (A)
300us
1ms
1
10ms
100ms
1s
DC
o
TA=25 C
0.01
0.01
0.1
1
10
100 120 140 160
2
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4 1E-3 0.01
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
80
Thermal Transient Impedance
50
0.1
60
Tj - Junction Temperature
Safe Operation Area
10
40
Mounted on 1in pad
o
RθJA :85 C/W
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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APM3023NV
Typical Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
28
40
VGS=5, 6, 7, 8, 9, 10V
35
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
24
20
16
4V
12
8
4
30
VGS=5V
25
20
VGS=10V
15
10
5
3V
0
0
0
2
4
6
8
10
0
4
8
12
16
20
24
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
28
1.6
24
1.4
28
Normalized Threshold Voltage
ID - Drain Current (A)
IDS =250µA
20
16
12
o
Tj=125 C
o
8
Tj=-55 C
o
Tj=25 C
4
0
0
1
2
3
4
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
5
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1.2
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM3023NV
Typical Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
30
VGS = 10V
IDS = 7A
1.6
10
1.4
IS - Source Current (A)
Normalized On Resistance
1.8
1.2
1.0
0.8
0.6
0.4
o
Tj=150 C
o
Tj=25 C
1
0.2
o
0.0
-50 -25
RON@Tj=25 C: 15mΩ
0
25
50
75
0.3
0.0
100 125 150
Tj - Junction Temperature (°C)
0.4
1.6
2.0
Gate Charge
10
1400
VDS=15V
9 I = 7A
D
Frequency=1MHz
VGS - Gate-source Voltage (V)
1200
C - Capacitance (pF)
1.2
VSD - Source - Drain Voltage (V)
Capacitance
1000
Ciss
800
600
400
Coss
200
0
5
8
7
6
5
4
3
2
1
Crss
0
0.8
10
15
20
25
0
30
5
10
15
20
25
30
QG - Gate Charge (nC)
VDS - Drain-Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
0
6
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APM3023NV
Package Information
SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)
D
D1
a
E
H
1
2
3
L
C
B1
B
e
e1
A
a
D im
A
B
B1
C
D
D1
e
e1
E
H
L
α
M illim eters
M in.
1.40
0.40
0.35
0.35
4.40
1.35
Inches
M ax.
1.60
0.56
0.48
0.44
4.60
1.83
M in.
0.055
0.016
0.014
0.014
0.173
0.053
1.50 B SC
3.00 B SC
2.29
3.75
0.80
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
M ax.
0.063
0.022
0.019
0.017
0.181
0.072
0.059 BSC
0.118 B SC
2.60
4.25
1.20
10°
7
0.090
0.148
0.031
0.102
0.167
0.047
10°
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APM3023NV
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D
A
B1
a
c
H
E
L
K
e
A1
e1
b
B
Dim
A
A1
B
B1
c
D
E
e
e1
H
L
K
α
β
Millimeters
Min.
1.50
0.02
0.60
2.90
0.28
6.30
3.30
Inches
Max.
1.80
0.08
0.80
3.10
0.32
6.70
3.70
Min.
0.06
Max.
0.07
0.02
0.11
0.01
0.25
0.13
0.03
0.12
0.01
0.26
0.15
2.3 BSC
4.6 BSC
6.70
0.91
1.50
0°
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
0.09 BSC
0.18 BSC
7.30
1.10
2.00
10°
0.26
0.04
0.06
0°
13°
0.29
0.04
0.08
10°
13°
8
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APM3023NV
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
C ritical Zone
T L to T P
T e m p e ra tu re
R am p-up
TL
tL
T sm ax
T sm in
R am p-down
ts
Preheat
25
t 25 °C to Peak
T im e
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
9
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APM3023NV
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures
3
3
Package Thickness
Volum e m m
Volum e m m
<350
≥350
<2.5 m m
240 +0/-5°C
225 +0/-5°C
≥2.5 m m
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Tem peratures
3
3
3
Package Thickness
Volum e mm
Volum e mm
Volum e mm
<350
350-2000
>2000
<1.6 m m
260 +0°C*
260 +0°C*
260 +0°C*
1.6 m m – 2.5 m m
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 m m
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and
including the stated classification tem perature (this m eans Peak reflow tem perature +0°C.
For exam ple 260°C+0°C) at the rated MSL level.
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
t
E
P
Po
D
P1
Bo
F
W
Ao
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
D1
10
Ko
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APM3023NV
Carrier Tape & Reel Dimensions(Cont.)
T2
J
C
A
B
T1
Application
SOT-223
A
B
330±1
62±1.5
F
D
C
12.75±
0.15
D1
5.5 ± 0.05
1.5+ 0.1
1.5+ 0.1
J
T1
T2
W
P
E
2 ± 0.6
12.4 +0.2
2± 0.2
12 ± 0.3
8 ± 0.1
1.75± 0.1
Po
P1
Ao
Bo
Ko
t
7.5± 0.1
2.1± 0.1
0.3±0.05
4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1
(mm)
Cover Tape Dimensions
Application
Carrier Width
Cover Tape Width
Devices Per Reel
SOT-223
12
9.3
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
11
www.anpec.com.tw
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