ISSUED DATE :2001/10/04 REVISED DATE :2004/11/18C G M A4 4 NPN EPITAXIAL PLANAR T RANSISTOR Description The GMA44 is designed for application requires for high voltage. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 500 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 6.0 V Collector Current IC 300 mA Total Power Dissipation PD 1.0 W Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 500 - - V IC=100uA Test Conditions BVCEO 400 - - V IC=1mA BVEBO 6 - - V IE=10uA ICBO - - 100 nA VCB=400V ICES - - 500 nA VCB=400V IEBO - - 100 nA VEB=4V VCE(sat)1 - - 375 mV IC=20mA, IB=2mA VCE(sat)2 - - 750 mV IC=50mA, IB=5 mA VBE(sat) - - 750 mV IC=1 0mA, IB=1mA hFE1 40 - - hFE2 50 - 300 VCE=10V, IC=10mA hFE3 45 - - VCE=10V, IC=50mA hFE4 40 - - Cob - 4 6 GMA44 VCE=10V, IC=1mA VCE=10V, IC=100mA pF VCE=20V, f=1MHz 1/2 ISSUED DATE :2001/10/04 REVISED DATE :2004/11/18C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GMA44 2/2