PHILIPS BFR53 Npn 2 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR53
NPN 2 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
1997 Oct 28
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
FEATURES
BFR53
PINNING
• Very low intermodulation distortion
• Very high power gain.
APPLICATIONS
PIN
DESCRIPTION
1
base
2
emitter
3
collector
3
fpage
1
• Thick and thin-film circuits.
2
Top view
MSB003
Marking code: N1.
DESCRIPTION
Fig.1 SOT23.
NPN wideband transistor in a plastic
SOT23 package.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
18
V
VCEO
collector-emitter voltage
open base
−
10
V
ICM
peak collector current
f > 1 MHz
−
100
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−
250
mW
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
0.9
−
pF
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tj = 25 °C
2
−
GHz
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C
10.5
−
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
18
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
50
mA
ICM
peak collector current
f > 1 MHz
−
100
mA
Ptot
total power dissipation
Ts ≤ 85 °C (note 1)
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 28
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
VALUE
UNIT
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
IE = 0; VCB = 10 V
−
−
50
IC = 25 mA; VCE = 5 V; see Fig.2
25
−
−
IC = 50 mA; VCE = 5 V; see Fig.2
25
−
−
−
0.9
−
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz;
see Fig.3
UNIT
nA
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1.5
−
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
−
0.9
−
pF
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
see Fig.4
−
2
−
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C; see Fig.5
−
10.5
−
dB
F
noise figure
IC = 2 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C; see Fig.6
−
−
5
dB
Note
2
S 21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dḂ .
2 
2

 1 – S 11   1 – S 22 
1997 Oct 28
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
MEA458
MEA457
100
2.0
Cc
(pF)
handbook, halfpage
handbook, halfpage
h FE
90
1.6
80
1.2
70
0.8
60
0.4
50
0
50
I C (mA)
0
100
VCE = 5 V; Tj = 25 °C.
Fig.2
4
0
8
12
16
V CB (V)
20
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
DC current gain as a function of collector
current; typical values.
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
MEA455
MEA459
30
2.2
handbook, halfpage
handbook, halfpage
gain
(dB)
fT
(GHz)
1.8
20
1.4
10
G UM
I S 12 I 2
0
2
10
1.0
0
25
I C (mA)
50
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
Fig.4
1997 Oct 28
10 3
f (MHz)
104
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Transition frequency as a function of
collector current; typical values.
Fig.5
4
Gain as a function of frequency;
typical values.
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
MEA460
MEA456
50
10
handbook, halfpage
handbook, halfpage
BS
(mS)
F
(dB)
3.3
3.5
F = 5.5 dB
5.0
4.5
4.0
0
5
−50
0
0
10
20
30
40
I C (mA)
0
20
40
60
80
100
G S (mS)
VCE = 5 V; f = 500 MHz; GS = 20 mS; BS is tuned; Tamb = 25 °C.
IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.6
1997 Oct 28
Minimum noise figure as a function of
collector current; typical values.
Fig.7 Circles of constant noise figure; typical values.
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
1
handbook, full pagewidth
0.5
2
0.2
5
10
1000 MHz
+j
0.2
0
0.5
800
1
2
5
∞
10
500
300
–j
10
100
5
0.2
2
0.5
MEA461
1
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.8 Common emitter input reflection coefficient (S11).
90 o
handbook, full pagewidth
60 o
120 o
100
150 o
30 o
300
500
180 o
25
15
ϕ
0o
1000 MHz
5
ϕ
30 o
150 o
60 o
120 o
90 o
MEA463
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.9 Common emitter forward transmission coefficient (S21).
1997 Oct 28
6
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
90 o
handbook, full pagewidth
60 o
120 o
1000 MHz
800
150 o
30 o
500
300
ϕ
100
180 o
0.05
0.10
0o
0.15
ϕ
30 o
150 o
60 o
120 o
90 o
MEA464
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.10 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
–j
2
800
500
5
∞
10
300
10
100
1000
MHz
0.2
5
2
0.5
1
MEA462
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.11 Common emitter output reflection coefficient (S22).
1997 Oct 28
7
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1997 Oct 28
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 28
9
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
NOTES
1997 Oct 28
10
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
NOTES
1997 Oct 28
11
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© Philips Electronics N.V. 1997
SCA55
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127127/00/02/pp12
Date of release: 1997 Oct 28
Document order number:
9397 750 02896