Z ibo Seno Electronic Engineering Co., Ltd. MBRF840-MBRF8200 8.0 A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! Ideally Suited for Automatic Assembly C Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O B G ! ! ! A PIN1 3 D Mechanical Data ! ! ITO-220AC Min Max Dim A 15.50 14.50 B 9.50 10.50 C 2.55 2.90 D 3.30 4.30 E 13.00 14.00 F 0.30 0.90 G 3.00 Ø 3.80 Ø H 6.30 7.30 I 4.20 4.80 J 2.50 2.90 K 0.47 0.75 L 3.10 2.50 P 4.88 5.28 All Dimensions in mm F Case: ITO-220AC, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Mounting Position: Any Lead Free: For RoHS / Lead Free Version E P I L H PIN 1 + + PIN 3 - Case J K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TL = 100°C MBRF 845 VRRM VRWM VR 40 45 50 60 80 100 150 200 V VR(RMS) 28 31 35 42 56 70 105 140 V IO IFSM Forward Voltage @IF = 8A V FM @TA = 25°C @TA = 100°C IRM Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 1) Operating and Storage Temperature Range MBRF 8150 MBRF 840 Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Peak Reverse Current At Rated DC Blocking Voltage MBRF MBRF 850 860 MBRF MBRF 8100 880 Symbol Cj MBRF 8200 Units 8. 0 A 100 0.85 0.80 0.70 A 120 0.92 0.1 20 350 RJA mA 280 3.5 -55 to +150 Tj, TSTG V 200 pF 2.0 °C/W -55 to +175 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MBRF840-MBRF8200 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. 150 10.0 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT AMPERES MBRF840-MBRF8200 = 40-100V = 150-200V 8.0 6.0 4.0 2.0 0 0 20 40 60 80 100 120 140 160 180 120 8.3ms Single Half Since-Wave JEDEC Method 80-200V 110 90 70 40-60V 50 30 20 10 CASE TEMPERATURE, OC 1 5 2 10 20 50 100 NO. OF CYCLE AT 60Hz Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT Fig.1- FORWARD CURRENT DERATING CURVE 40 1.0 INSTANTANEOUS FORWARD CURRENT AMPERES INSTANTANEOUS REVERSE CURRENT, mA 10 T J =100 O C T J = 75 O C 0.1 T J = 25 O C .01 .001 0 20 40 60 80 100 120 50V~60V 80V~100V 2 1.0 .8 .6 .4 150V~200V .2 .6 .7 .8 .9 1.0 1.1 1.2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%) Fig.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Fig.3- TYPICAL REVERSE CHARACTERISTICS MBRF840 – MBRF8200 10 8 6 4 .1 .5 140 40V~45V 2 of 2 www.senocn.com Alldatasheet