DTM4425 www.din-tek.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 30 0.0088 at VGS = 10 V - 15 0.0105 at VGS = 4.5 V - 13.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 27 nC APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) - 12.7 ID TA = 25 °C - 13b, c - 10.4b, c Pulsed Drain Current IDM TC = 25 °C - 4.7 IS TA = 25 °C - 2.1b, c 5.7 TC = 70 °C 3.6 PD TA = 25 °C W 2.5b, c 1.6b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 50 TC = 25 °C Maximum Power Dissipation V - 15 TC = 70 °C TA = 70 °C Continous Source-Drain Diode Current Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) Symbol Typical Maximum t ≤ 10 s RthJA 35 50 Steady State RthJF 18 22 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. 1 DTM4425 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS , ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 20 mV/°C 4.9 - 1.2 - 2.5 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≤ - 5 V, VGS = - 10 V - 30 µA A VGS = - 10 V, ID = - 13 A 0.0081 0.0088 VGS = - 4.5 V, ID = - 10 A 0.0097 0.0105 VDS = - 15 V, ID = - 13 A 40 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 2610 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 13 A td(off) 53 80 27 41 8 VDS = - 15 V, VGS = - 4.5 V, ID = - 13 A f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 0.4 2.1 4.2 52 78 41 62 36 54 tf 15 25 td(on) 12 20 tr td(off) nC 13 td(on) tr pF 460 395 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf 9 15 42 63 9 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.7 - 50 IS = - 10 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 20 30 ns 10 20 nC 10 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM4425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 2.0 VGS = 10 V thru 4 V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 1.5 1.0 TC = 25 °C 0.5 10 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 VDS - Drain-to-Source Voltage (V) 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 4000 0.015 VGS = 4.5 V 0.010 VGS = 10 V Ciss 3000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 2000 0.005 1000 Coss Crss 0.000 0 0 10 20 30 40 50 5 0 10 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 13 A ID = 13 A 8 6 VDS = 15 V VDS = 24 V 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge 50 60 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTM4425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.04 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 0.03 0.02 TJ = 125 °C 0.01 TJ = 25 °C 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 4 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 10 100 80 Power (W) VGS(th) (V) 1.9 1.6 ID = 250 µA 60 40 1.3 20 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* 100 µA 10 I D - Drain Current (A) 1 Time (s) TJ - Temperature (°C) Threshold Voltage 1 ms 10 ms 1 100 ms 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1s 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 10 DTM4425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 24 I D - Drain Current (A) 20 16 12 8 4 0 25 0 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.8 8 1.5 6 Power (W) Power (W) 1.2 4 0.9 0.6 2 0.3 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTM4425 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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