UTC MMDT3904 Dual npn small signal surface mount transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMDT3904
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
DUAL NPN SMALL SIGNAL
SURFACE MOUNT TRANSISTOR
„
DESCRIPTION
The UTC MMDT3904 is a dual NPN small signal surface mount
transistor.
„
FEATURES
* Suitable for Low Power Amplification and Switching
* Epitaxial Planar Die Construction
* Extremely-Small Surface Mount Package
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MMDT3904L-AL6-R
MMDT3904G-AL6-R
MMDT3904L-AL6-R
Package
Packing
SOT-363
Tape Reel
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) TL6: SOT-363
(3)Lead Free
(3) Halogen Free, L: Lead Free
„
MARKING
„
PIN CONFIGURATION
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Copyright © 2011 Unisonic Technologies Co., Ltd
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„
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
200
mA
Power Dissipation
PD
200
mW
Thermal Resistance, Junction to Ambient
θJA
625
℃/W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
Collector Cut-off Current
ICEX
VCE = 30V, VEB(OFF) = 3.0V
Base Cut-off Current
IBL
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 1)
IC = 100μA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
DC Current Gain
hFE
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
Base- Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
CIBO
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hIE
VCE = 10V, IC = 1.0mA,
Voltage Feedback Ratio
HRE
f = 1.0kHz
Small Signal Current Gain
HFE
Output Admittance
HOE
VCE = 20V, IC = 10mA,
Current Gain-Bandwidth Product
fT
f = 100MHz
VCE = 5.0V, IC = 100μA,
Noise Figure
NF
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
VCC = 3.0V, IC = 10mA,
Delay Time
TD
VBE(off) = - 0.5V, IB1 = 1.0mA
Rise Time
TR
Storage Time
TS
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
TF
Note: 1. Short duration test pulse used to minimize self-heating.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
50
50
V
V
V
nA
nA
60
40
5.0
40
70
100
60
30
0.65
1.0
0.5
100
1.0
300
0.20
0.30
0.85
0.95
V
V
V
V
4.0
8.0
10
8.0
400
40
pF
pF
KΩ
-4
×10
300
μS
MHz
5.0
dB
35
35
ns
ns
200
ns
50
ns
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Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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