IXFN44N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 37 A IDM TC = 25°C, pulse width limited by TJM 110 A IAR TC = 25°C 22 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g TJ TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting torque Terminal connection torque t = 1min t = 1s Weight 1000V 37A Ω 220mΩ 300ns S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z z z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) z z Easy to mount Space savings High power density V Applications 6.5 V ± 200 nA z TJ = 125°C VGS = 10V, ID = 22A, Note 1 © 2008 IXYS CORPORATION, All rights reserved 50 μA 3 mA 220 mΩ z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99879A(4/08) IXFN44N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = 22A, Note 1 RGi 20 35 S Gate input resistance 1.70 Ω 19 nF VGS = 0V, VDS = 25V, f = 1MHz 1060 pF 41 pF Ciss Coss SOT-227B Outline Crss td(on) Resistive Switching Times 60 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 22A 68 ns td(off) RG = 1Ω (External) 90 ns 54 ns 305 nC 104 nC 125 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd RthJC 0.14 RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W °C/W Characteristic Values Min. Typ. Max. 44 A Repetitive, pulse width limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 22A, -di/dt = 100A/μs VR = 100V 2.5 μC 17 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 90 VGS = 10V 9V 40 35 70 30 60 8V ID - Amperes ID - Amperes VGS = 10V 9V 80 25 20 15 10 50 40 8V 30 20 7V 5 10 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 45 3.0 VGS = 10V 8V 40 2.8 VGS = 10V 2.6 35 2.4 RDS(on) - Normalized ID - Amperes 15 VDS - Volts VDS - Volts 30 25 20 7V 15 2.2 2.0 I D = 44A 1.8 1.6 I D = 22A 1.4 1.2 1.0 10 0.8 5 6V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 40 VGS = 10V 2.4 TJ = 125ºC 35 30 2.0 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 TJ = 25ºC 1.4 25 20 15 1.2 10 1.0 5 0.8 0 0 10 20 30 40 50 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 60 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN44N100P Fig. 7. Input Admittance Fig. 8. Transconductance 50 60 45 55 TJ = - 40ºC 50 40 45 TJ = 125ºC 25ºC - 40ºC 30 g f s - Siemens ID - Amperes 35 25 20 25ºC 40 125ºC 35 30 25 20 15 15 10 10 5 5 0 0 5 5.5 6 6.5 7 7.5 8 8.5 0 9 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 130 120 VDS = 500V 14 110 I D = 22A 100 I G = 10mA 12 VGS - Volts IS - Amperes 90 80 70 60 50 TJ = 125ºC 10 8 6 40 30 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss 0.100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_44N100P(97)4-01-08-D