Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 General Description Features The AP2301 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 1.5A current continuously, offers enough current for most DDR applications. Output voltage is designed to track the reference voltage within a 2% tolerance for load regulation while preventing shooting through on the output stage. On-chip thermal limiting provides protection against a combination of high current and ambient temperature which would create an excessive junction temperature. · Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements · · · Source and Sink Current up to 1.5A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors · Shutdown for Standby or Suspend Mode Operation with High-impedance Output Applications The AP2301, used in conjunction with series termination resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs. · · · DDR-SDRAM Termination DDR-II Termination SSTL-2 Termination The AP2301 is available in SOIC-8 and TO-252-5L packages. SOIC-8 TO-252-5L Figure 1. Package Types of AP2301 Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Pin Configuration M Package (SOIC-8) D Package (TO-252-5L) 5 4 VIN 1 8 VCNTL GND 2 7 VCNTL REFEN 3 6 VCNTL 3 2 VOUT 4 5 VCNTL 1 VOUT REFEN VCNTL (TAB) GND VIN Figure 2. Pin Configuration of AP2301 (Top View) Pin Description Pin Number Pin Name Function SOIC-8 TO-252-5L 1 1 VIN 2 2 GND 3 4 REFEN 4 5 VOUT Output Voltage 5, 6, 7, 8 3 VCNTL Supply Voltage for Internal Circuit (Internally Connected for SOIC-8), (TAB for TO-252-5L) Power Input Ground Reference Voltage Input and Chip Enable Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Functional Block Diagram VCNTL VIN CURRENT LIMIT BANDGAP OUTPUT CONTROL REFEN VOUT START UP THERMAL PROTECT GND Figure 3. Functional Block Diagram of AP2301 Ordering Information AP2301 Package SOIC-8 TO-2525L - Circuit Type E1: Lead Free Blank: Tin Lead Package M: SOIC-8 D: TO-252-5L TR: Tape and Reel Blank: Tube Temperature Range Part Number Marking ID Packing Type Tin Lead Lead Free Tin Lead Lead Free AP2301M AP2301M-E1 2301M 2301M-E1 Tube AP2301MTR AP2301MTR-E1 2301M 2301M-E1 Tape ＆ Reel AP2301D AP2301D-E1 AP2301D AP2301D-E1 Tube AP2301DTR AP2301DTR-E1 AP2301D AP2301D-E1 Tape ＆ Reel 0 to 125oC 0 to 125oC BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Supply Voltage for Internal Circuit VCNTL 7 V PD Internally Limited W ESD 2 KV TJ 150 oC TSTG -65 to 150 TLEAD 260 Power Dissipation ESD (Human Body Model) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) θJA Package Thermal Resistance (Free Air) o C oC SOIC-8 160 oC/W TO-252-5L 130 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min VCNTL (Note 2, 3) Supply Voltage for Internal Circuit Typ Max Unit 3.3 6 V VCNTL V 125 oC 2.5 DDR I VIN Power Input 1.6 DDR II 1.8 TJ Junction Temperature 0 Note 2: Keep VCNTL ≥ VIN in power on and power off sequences. Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V. Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 4 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Electrical Characteristics (TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.) Parameter Symbol Output Offset Voltage VOS DDR I Load Regulation DDR II Quiescent Current of VCNTL Leakage Current in Shutdown Mode ∆VOUT/ VOUT IQ ISHDN Conditions Min Typ Max Unit -20 0 20 mV IL=0 to 1.5A 0.8 2 IL=0 to -1.5A 0.8 2 IL=0 to 1.5A 1.2 3 IL=0 to -1.5A 1.2 3 ΙL=0Α (Note 4) % No Load 3 5 mA VREFEN<0.2V, RL=180Ω 3 6 µA Protection Current Limit ILIMIT Thermal Shutdown Temperature TSHDN 2.1 3.3V ≤VCNTL ≤5V Thermal Shutdown Hysteresis A 150 oC 50 oC Shutdown Function Shutdown Threshold Trigger Output = High 0.8 Output = Low 0.2 V Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 5 5 4 4 Sinking Current (A) Sourcing Current (A) Typical Performance Characteristics 3 VCNTL=3.3V 2 3 2 VCNTL=3.3V VIN=2.5V VIN=2.5V VOUT=1.25V VOUT=1.25V 1 1 -40 -20 0 20 40 60 80 100 -40 120 -20 0 o 60 80 100 120 Figure 5. Sinking Current vs. Junction Temperature 650 650 Threshold Voltage (mV) Threshold Voltage (mV) 40 Junction Temperature ( C) Figure 4. Sourcing Current vs. Junction Temperature 600 550 VCNTL=3.3V VIN=2.5V 500 -40 20 o Junction Temperature ( C) -20 0 20 40 60 80 100 600 550 VCNTL=5.0V VIN=2.5V 500 120 -40 o -20 0 20 40 60 80 100 120 o Junction Temperature ( C) Junction Temperature ( C) Figure 7. Threshold Voltage vs. Junction Temperature Figure 6. Threshold Voltage vs. Junction Temperature Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 6 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 20 10 10 Output Transient Voltage (mV) 20 0 -10 0 -10 1.5 1.5 0.5.5 0.5 Output Current (A) Output Current (A) Output Transient Voltage (mV) Typical Performance Characteristics (Continued) -0.5 -1.5 -0.5 -1.5 -2.5 -2.5 Time (µs) Time (µs) Figure 8. 0.9VTT at 1.5A Transient Response (Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF) Figure 9. 1.25VTT at 1.5A Transient Response (Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF) 0.40 0.39 0.39 0.38 0.37 0.38 VIN=0.9V VIN=0.85V 0.37 VIN=0.85V VIN=0.8V 0.36 RDS(ON) (Ω) RDS(ON) (Ω) 0.36 VIN=0.9V 0.35 0.34 0.33 VIN=0.8V 0.35 0.34 0.33 0.32 0.32 0.31 0.31 VCNTL=3.3V 0.30 0.29 VCNTL=5.0V 0.30 VREFEN=1.0V VREFEN=1.0V 0.29 0.28 0.28 40 60 80 100 40 120 60 80 100 120 o o Junction Temperature( C) Junction Temperature ( C) Figure 11. RDS(on) vs. Junction Temperature Figure 10. RDS(on) vs. Junction Temperature Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 7 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Typical Performance Characteristics (Continued) 350 350 300 o o TC=65 C 2 o TC=65 C 200 150 100 50 TC=50 C 300 TC=50 C Copper Area (mm ) 2 Copper Area (mm ) o 250 o TC=25 C o TC=25 C 250 200 Package: TO-252-5L No heatsink 150 Package: SOIC-8 No heatsink 100 0 3.0 3.5 4.0 4.5 5.0 5.5 4.0 6.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 Power Dissipation (W) Power Dissipation (W) Figure 12. Copper Area vs. Power Dissipation Figure 13. Copper Area vs. Power Dissipation Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Typical Application VCNTL = 3.3V VIN = 2.5V VIN R1 REFEN EN RTT CCNTL VCNTL AP2301 CIN VOUT GND R2 CSS COUT RDUMMY Figure 14. Typical Application of AP2301 R1=R2=100KΩ, RTT=50Ω /33Ω /25Ω RDUMMY=1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present CSS=1µF, CIN=470µF, CCNTL=47µF, COUT=470µF Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Mechanical Dimensions SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 10 Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR AP2301 Mechanical Dimensions (Continued) TO-252-5L 0.900(0.035) 1.250(0.049) 6.350(0.250) 6.700(0.264) 4.300(0.169) 5.500(0.217) Unit: mm(inch) 2.180(0.086) 2.400(0.094) 4.800(0.189) MIN 0.430(0.017) 0.600(0.023) 5.970(0.235) 6.220(0.245) 9.500(0.374) 10.400(0.410) 4.300(0.169) 5.400(0.213) 0.000(0.000) 0.250(0.010) 2.540(0.100)BSC 5.080(0.200) BSC 0.450(0.018) 0.700(0.028) 0.430(0.017) 0.600(0.023) 1.400(0.055) 1.780(0.070) Jul. 2006 Rev. 1. 3 2.550(0.100) 3.200(0.126) BCD Semiconductor Manufacturing Limited 11 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. 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