BCD AP2301 1.5a ddr termination regulator Datasheet

Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
General Description
Features
The AP2301 linear regulator is designed to meet the
JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or
source up to 1.5A current continuously, offers enough
current for most DDR applications. Output voltage is
designed to track the reference voltage within a 2%
tolerance for load regulation while preventing shooting
through on the output stage. On-chip thermal limiting
provides protection against a combination of high current and ambient temperature which would create an
excessive junction temperature.
·
Support Both DDR I (1.25VTT) and DDR II
(0.9VTT) Requirements
·
·
·
Source and Sink Current up to 1.5A
High Accuracy Output Voltage at Full-load
Adjustable VOUT by External Resistors
·
Shutdown for Standby or Suspend Mode
Operation with High-impedance Output
Applications
The AP2301, used in conjunction with series termination resistors, provides an excellent voltage source for
active termination schemes of high speed transmission
lines as those seen in high speed memory buses and
distributed backplane designs.
·
·
·
DDR-SDRAM Termination
DDR-II Termination
SSTL-2 Termination
The AP2301 is available in SOIC-8 and TO-252-5L
packages.
SOIC-8
TO-252-5L
Figure 1. Package Types of AP2301
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Pin Configuration
M Package
(SOIC-8)
D Package
(TO-252-5L)
5
4
VIN
1
8
VCNTL
GND
2
7
VCNTL
REFEN
3
6
VCNTL
3
2
VOUT
4
5
VCNTL
1
VOUT
REFEN
VCNTL (TAB)
GND
VIN
Figure 2. Pin Configuration of AP2301 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOIC-8
TO-252-5L
1
1
VIN
2
2
GND
3
4
REFEN
4
5
VOUT
Output Voltage
5, 6, 7, 8
3
VCNTL
Supply Voltage for Internal Circuit (Internally Connected for SOIC-8),
(TAB for TO-252-5L)
Power Input
Ground
Reference Voltage Input and Chip Enable
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Functional Block Diagram
VCNTL
VIN
CURRENT
LIMIT
BANDGAP
OUTPUT
CONTROL
REFEN
VOUT
START UP
THERMAL
PROTECT
GND
Figure 3. Functional Block Diagram of AP2301
Ordering Information
AP2301
Package
SOIC-8
TO-2525L
-
Circuit Type
E1: Lead Free
Blank: Tin Lead
Package
M: SOIC-8
D: TO-252-5L
TR: Tape and Reel
Blank: Tube
Temperature
Range
Part Number
Marking ID
Packing Type
Tin Lead
Lead Free
Tin Lead
Lead Free
AP2301M
AP2301M-E1
2301M
2301M-E1
Tube
AP2301MTR
AP2301MTR-E1
2301M
2301M-E1
Tape & Reel
AP2301D
AP2301D-E1
AP2301D
AP2301D-E1
Tube
AP2301DTR
AP2301DTR-E1
AP2301D
AP2301D-E1
Tape & Reel
0 to 125oC
0 to 125oC
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Supply Voltage for Internal Circuit
VCNTL
7
V
PD
Internally Limited
W
ESD
2
KV
TJ
150
oC
TSTG
-65 to 150
TLEAD
260
Power Dissipation
ESD (Human Body Model)
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
θJA
Package Thermal Resistance (Free Air)
o
C
oC
SOIC-8
160
oC/W
TO-252-5L
130
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
VCNTL (Note 2, 3)
Supply Voltage for Internal Circuit
Typ
Max
Unit
3.3
6
V
VCNTL
V
125
oC
2.5
DDR I
VIN
Power Input
1.6
DDR II
1.8
TJ
Junction Temperature
0
Note 2: Keep VCNTL ≥ VIN in power on and power off sequences.
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)
Parameter
Symbol
Output Offset Voltage
VOS
DDR I
Load
Regulation
DDR II
Quiescent Current of VCNTL
Leakage Current in Shutdown Mode
∆VOUT/
VOUT
IQ
ISHDN
Conditions
Min
Typ
Max
Unit
-20
0
20
mV
IL=0 to 1.5A
0.8
2
IL=0 to -1.5A
0.8
2
IL=0 to 1.5A
1.2
3
IL=0 to -1.5A
1.2
3
ΙL=0Α (Note 4)
%
No Load
3
5
mA
VREFEN<0.2V, RL=180Ω
3
6
µA
Protection
Current Limit
ILIMIT
Thermal Shutdown Temperature
TSHDN
2.1
3.3V ≤VCNTL ≤5V
Thermal Shutdown Hysteresis
A
150
oC
50
oC
Shutdown Function
Shutdown Threshold Trigger
Output = High
0.8
Output = Low
0.2
V
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN.
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
5
5
4
4
Sinking Current (A)
Sourcing Current (A)
Typical Performance Characteristics
3
VCNTL=3.3V
2
3
2
VCNTL=3.3V
VIN=2.5V
VIN=2.5V
VOUT=1.25V
VOUT=1.25V
1
1
-40
-20
0
20
40
60
80
100
-40
120
-20
0
o
60
80
100
120
Figure 5. Sinking Current vs. Junction Temperature
650
650
Threshold Voltage (mV)
Threshold Voltage (mV)
40
Junction Temperature ( C)
Figure 4. Sourcing Current vs. Junction Temperature
600
550
VCNTL=3.3V
VIN=2.5V
500
-40
20
o
Junction Temperature ( C)
-20
0
20
40
60
80
100
600
550
VCNTL=5.0V
VIN=2.5V
500
120
-40
o
-20
0
20
40
60
80
100
120
o
Junction Temperature ( C)
Junction Temperature ( C)
Figure 7. Threshold Voltage vs. Junction Temperature
Figure 6. Threshold Voltage vs. Junction Temperature
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
20
10
10
Output Transient
Voltage (mV)
20
0
-10
0
-10
1.5
1.5
0.5.5
0.5
Output
Current (A)
Output
Current (A)
Output Transient
Voltage (mV)
Typical Performance Characteristics (Continued)
-0.5
-1.5
-0.5
-1.5
-2.5
-2.5
Time (µs)
Time (µs)
Figure 8. 0.9VTT at 1.5A Transient Response
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)
Figure 9. 1.25VTT at 1.5A Transient Response
(Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10µF)
0.40
0.39
0.39
0.38
0.37
0.38
VIN=0.9V
VIN=0.85V
0.37
VIN=0.85V
VIN=0.8V
0.36
RDS(ON) (Ω)
RDS(ON) (Ω)
0.36
VIN=0.9V
0.35
0.34
0.33
VIN=0.8V
0.35
0.34
0.33
0.32
0.32
0.31
0.31
VCNTL=3.3V
0.30
0.29
VCNTL=5.0V
0.30
VREFEN=1.0V
VREFEN=1.0V
0.29
0.28
0.28
40
60
80
100
40
120
60
80
100
120
o
o
Junction Temperature( C)
Junction Temperature ( C)
Figure 11. RDS(on) vs. Junction Temperature
Figure 10. RDS(on) vs. Junction Temperature
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Typical Performance Characteristics (Continued)
350
350
300
o
o
TC=65 C
2
o
TC=65 C
200
150
100
50
TC=50 C
300
TC=50 C
Copper Area (mm )
2
Copper Area (mm )
o
250
o
TC=25 C
o
TC=25 C
250
200
Package: TO-252-5L
No heatsink
150
Package: SOIC-8
No heatsink
100
0
3.0
3.5
4.0
4.5
5.0
5.5
4.0
6.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
Power Dissipation (W)
Power Dissipation (W)
Figure 12. Copper Area vs. Power Dissipation
Figure 13. Copper Area vs. Power Dissipation
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Typical Application
VCNTL = 3.3V
VIN = 2.5V
VIN
R1
REFEN
EN
RTT
CCNTL
VCNTL
AP2301
CIN
VOUT
GND
R2
CSS
COUT
RDUMMY
Figure 14. Typical Application of AP2301
R1=R2=100KΩ, RTT=50Ω /33Ω /25Ω
RDUMMY=1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present
CSS=1µF, CIN=470µF, CCNTL=47µF, COUT=470µF
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Mechanical Dimensions
SOIC-8
Unit: mm(inch)
4.800(0.189)
5.000(0.197)
7°
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.300(0.012)
R0.150(0.006)
0.100(0.004)
φ 0.800(0.031)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
1°
5°
0.330(0.013)
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.190(0.007)
0.250(0.010)
Jul. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
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Preliminary Datasheet
1.5A DDR TERMINATION REGULATOR
AP2301
Mechanical Dimensions (Continued)
TO-252-5L
0.900(0.035)
1.250(0.049)
6.350(0.250)
6.700(0.264)
4.300(0.169)
5.500(0.217)
Unit: mm(inch)
2.180(0.086)
2.400(0.094)
4.800(0.189)
MIN
0.430(0.017)
0.600(0.023)
5.970(0.235)
6.220(0.245)
9.500(0.374)
10.400(0.410)
4.300(0.169)
5.400(0.213)
0.000(0.000)
0.250(0.010)
2.540(0.100)BSC
5.080(0.200)
BSC
0.450(0.018)
0.700(0.028)
0.430(0.017)
0.600(0.023)
1.400(0.055)
1.780(0.070)
Jul. 2006 Rev. 1. 3
2.550(0.100)
3.200(0.126)
BCD Semiconductor Manufacturing Limited
11
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