StrongIRFET™ IRFH8307TRPbF HEXFET® Power MOSFET VDSS 30 V 1.3 m 50 nC Rg (typical) 1.3 ID (@TC (Bottom) = 25°C) 100 A RDS(on) max (@ VGS = 10V) Qg (typical) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Battery Operated DC Motor Inverters Features Low RDSon (<1.3m) Low Thermal Resistance to PCB (<0.8°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Package Type IRFH8307PbF PQFN 5mm x 6 mm Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH8307TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 42 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 33 ID @ TC (Bottom) = 25°C Continuous Drain Current, VGS @ 10V 100 ID @ TC (Bottom) = 100°C Continuous Drain Current, VGS @ 10V 100 IDM Pulsed Drain Current 400 PD @TA = 25°C Power Dissipation 3.6 PD @TC (Bottom) = 25°C Power Dissipation 156 Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range 0.029 -55 to + 150 A W W/°C °C Notes through are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH8307TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS gfs Qg Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 190 ––– Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 1.1 1.7 1.80 -6.2 ––– ––– ––– ––– ––– 120 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 1.3 VGS = 10V, ID = 50A m 2.1 VGS = 4.5V, ID = 50A 2.35 V VDS = VGS, ID = 150µA ––– mV/°C 5.0 VDS = 24V, VGS = 0V µA 150 VDS = 24V, VGS = 0V, TJ=125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID = 50A ––– nC VGS = 10V, VDS = 15V, ID = 50A 50 12 6.5 16 16 23 30 1.3 26 30 31 13 7200 1360 590 75 ––– ––– ––– ––– ––– ––– 2.6 ––– ––– ––– ––– ––– ––– ––– nC nC ns pF VDS = 15V VGS = 4.5V ID = 50A See Fig. 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 50A RG=1.8 See Fig.17 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Reverse Recovery Charge Qrr Typ. ––– ––– Max. 420 50 Min. Typ. Max. ––– ––– 100 Units mJ A Units D A ––– ––– 400 ––– ––– ––– ––– 34 68 1.0 51 100 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 50A, VGS = 0V TJ = 25°C, IF = 50A, VDD = 15V di/dt = 200A/µs G S V ns nC Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Typ. 0.5 RJC (Top) Junction-to-Case ––– 15 RJA Junction-to-Ambient ––– 35 RJA (<10s) Junction-to-Ambient ––– 33 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback Max. 0.8 Units °C/W May 19, 2015 IRFH8307TRPbF 1000 1000 100 BOTTOM 10 2.7V BOTTOM 100 2.7V 60µs PULSE WIDTH Tj = 150°C 60µs PULSE WIDTH Tj = 25°C 10 1 0.1 1 10 0.1 100 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 TJ = 150°C 10 TJ = 25°C 1 0.1 VDS = 15V 60µs PULSE WIDTH 0.01 ID = 50A VGS = 10V 1.5 1.0 0.5 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 100000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Ciss Coss 1000 Crss ID= 50A 12 VDS = 24V VDS = 15V 10 8 6 4 2 0 100 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V www.irf.com © 2015 International Rectifier 0 40 80 120 160 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback May 19, 2015 IRFH8307TRPbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 TJ = 150°C 100 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 1msec 100µsec 100 10 10msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 VSD , Source-to-Drain Voltage (V) 1 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 300 3.0 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE 250 200 150 100 50 ID = 1.0A ID = 1.0mA 2.5 ID = 500µA ID = 150µA 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 -75 175 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) TC, Case Temperature (°C) Fig 10. Threshold Voltage Vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( Z thJC ) ID, Drain Current (A) 100 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 6 2000 EAS, Single Pulse Avalanche Energy (mJ) RDS (on), Drain-to -Source On Resistance (m) IRFH8307TRPbF ID = 50A 5 4 3 2 TJ = 125°C 1 TJ = 25°C 0 ID 15A 21A BOTTOM 50A TOP 1600 1200 800 400 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On– Resistance vs. Gate Voltage 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulse width 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH8307TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 6 Fig 18a. Gate Charge Test Circuit www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 18b. Gate Charge Waveform Submit Datasheet Feedback May 19, 2015 IRFH8307TRPbF PQFN 5x6 Outline "B" Package Details PQFN 5x6 Outline "G" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH8307TRPbF PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX XYWWX XXXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko W P1 DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package Type Reel Diameter (Inch) QTY Reel Width W1 (mm) Ao (mm) Bo (mm) Ko (mm) P1 (mm) W (mm) Pin 1 Quadrant 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH8307TRPbF Qualification Information† Industrial† (per JEDEC JESD47F†† guidelines) Qualification Level PQFN 5mm x 6mm Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.337mH, RG = 50, IAS = 50A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date Comments 03/28/2013 Updated package outline, on page 7. 08/01/2013 Added "StrongIRFET™" above part number on page1 Updated package outline for “option B” and added package outline for “option G” on page 7. Updated tape and reel on page 8. Updated package outline for “option G” on page 7. Updated "IFX logo" on page 1 and page 9. 04/28/2015 05/19/2015 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015