DMN1002UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVSSS Features 12V IS RSS(ON) Max TA = +25°C 2.75mΩ @ VGS = 4.5V 24.4A 6.1mΩ @ VGS = 2.5V 16.4A CSP with Footprint 3.05mm × 1.77mm Height = 0.11mm for Low Profile ESD Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) and yet maintain superior switching performance, Case: X4-DSN3118-6 Terminal Connections: See Diagram Below making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Applications Battery Management Load Switch Battery Protection X4-DSN3118-6 G1 1. Source 1 2. Gate 1 3. Source 1 4. Source 2 5. Gate 2 6. Source 2 ESD PROTECTED G2 Top View S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN1002UCA6-7 Notes: Case X4-DSN3118-6 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information M5 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E = 2017) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN1002UCA6 Document number: DS39839 Rev. 2 - 2 Mar 3 2017 E Apr 4 May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D October 2017 © Diodes Incorporated DMN1002UCA6 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VSSS VGSS Source-Source Voltage Gate-Source Voltage Continuous Source Current (Note 5) VGS = 4.5V Steady State Continuous Source Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Source Current (Note 6) Value 12 ±8 24.4 19.6 IS ISM 16.4 13.1 100 Symbol PD RθJA PD RθJA TJ, TSTG Value 1.10 114.1 2.47 50.7 -55 to +150 IS Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage Symbol Min Typ Max Unit BVSSS ISSS 12 — — — — — — — — 1 ±10 ±1.0 V µA µA µA VGS = 0V, IS = 1mA VSS = 9.6V, VGS = 0V VGS = ±8V, VSS = 0V VGS = ±5V, VSS = 0V 0.8 2.27 2.36 2.54 2.9 0.69 1.4 2.75 2.85 3.95 6.1 1.2 V VSS 0.35 — — — — — VSS = 10V, IS = 1.41mA VGS = 4.5V, IS = 6A VGS = 3.8V, IS = 6A VGS = 3.1V, IS = 6A VGS = 2.5V, IS = 6A VGS = 0V, IS = 6A Ciss Coss Crss Qg Qgs Qgd Qg(th) tD(ON) tR tD(OFF) tF — — — — — — — — — — — 3062 758 198 45.7 8.3 16.0 4.5 1005 2186 2643 4193 4593 1137 297 68.6 12.5 24.0 6.8 1508 3279 3965 6290 IGSS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) Static Source-Source On-Resistance RSS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at VTH Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Unit W °C/W W °C/W °C m V Test Condition pF VSS = 10V, VGS = 0V, f = 1kHz nC VSS = 8V, VGS = 4V, IS = 6A ns VSS = 8V, VGS = 4V, IS = 6A 5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN1002UCA6 Document number: DS39839 Rev. 2 - 2 2 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN1002UCA6 30 VGS = 2.0V VGS = 3.0V 25.0 IS, SOURCE-SOURCE CURRENT (A) IS, SOURCE-SOURCE CURRENT (A) 30.0 VGS = 4.5V VGS = 8.0V 20.0 VGS = 1.5V 15.0 10.0 VGS = 1.4V 5.0 VGS = 1.3V VGS = 1.2V 0.0 VSS = 5V 25 20 15 TJ = 125℃ 10 TJ = 85℃ 5 TJ = -55℃ 0 0 0.4 0.8 1.2 1.6 2 0.6 0.004 0.0035 VGS = 2.5V 0.003 VGS = 3.8V VGS = 4.5V 0.002 0.0015 0.001 0 5 10 15 20 25 30 RSS(ON), SOURCE-SOURCE ON-RESISTANCE () RSS(ON), SOURCE-SOURCE ON-RESISTANCE () Figure 1. Typical Output Characteristic 0.0025 VGS = 4.5V 0.003 TJ = 125℃ TJ = 85℃ 0.0025 TJ = 25℃ 0.002 TJ = -55℃ 0.0015 0.001 0 5 10 15 20 25 Document number: DS39839 Rev. 2 - 2 1.4 1.6 1.8 0.016 0.014 0.012 0.01 0.008 0.006 0.004 IS = 6.0A 0.002 0 0 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 30 IS, SOURCE-SOURCE CURRENT (A) Figure 5. Typical On-Resistance vs. Source Current and Junction Temperature DMN1002UCA6 1.2 0.018 RSS(ON), SOURCE-SOURCE ON-RESISTANCE () 0.004 TJ = 150℃ 1 0.02 IS, SOURCE-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Source Current and Gate Voltage 0.0035 0.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VSS, SOURCE-SOURCE VOLTAGE (V) RSS(ON), SOURCE-SOURCE ON-RESISTANCE () TJ = 25℃ TJ = 150℃ 3 of 7 www.diodes.com 1.8 VGS = 4.5V, IS = 6.0A 1.6 VGS = 3.8V, IS = 6.0A 1.4 1.2 VGS = 2.5V, IS = 6.0A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature October 2017 © Diodes Incorporated 0.005 VGS(TH), GATE THRESHOLD VOLTAGE (V) RSS(ON), SOURCE-SOURCE ON-RESISTANCE () DMN1002UCA6 VGS = 2.5V, IS = 6.0A 0.004 VGS = 3.8V, IS = 6.0A 0.003 0.002 VGS = 4.5V, IS = 6.0A 0.001 -50 -25 0 25 50 75 100 125 1.2 1 IS = 1mA 0.8 IS = 250μA 0.6 0.4 0.2 -50 150 -25 10 25 50 75 100 125 150 10000 f = 1MHz VGS = 0V CT, JUNCTION CAPACITANCE (pF) IS, SOURCE-SOURCE CURRENT (A) 0 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 8 6 4 TJ = 85oC TJ = 125oC 2 TJ = 25oC TJ = 150oC TJ = -55oC Ciss Coss 1000 Crss 100 0 0 0.2 0.4 0.6 0.8 1 VFSS, SOURCE-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.2 2 4 6 8 10 12 VSS, SOURCE-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 1000 8 RDS(ON) Limited PW = 1ms IS, SOURCE CURRENT (A) 7 6 VGS (V) 5 4 3 VSS = 8.0V, IS = 6.0A 2 1 0 0 10 20 30 40 50 60 70 80 90 Qg (nC) Figure 11. Gate Charge DMN1002UCA6 Document number: DS39839 Rev. 2 - 2 PW = 100µs 100 10 PW = 10ms 1 PW = 100ms PW = 1s 0.1 TJ(Max) = 150℃ TC = 25℃ Single Pulse PW = 10s DUT on 1*MRP Board DC VGS = 4.5V 0.01 0.01 0.1 1 10 100 VSS, SOURCE-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN1002UCA6 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse 0.001 0.0001 0.001 RθJA(t) = r(t) * RθJA RθJA = 115℃/W Duty Cycle, D = t1 / t2 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN1002UCA6 Document number: DS39839 Rev. 2 - 2 5 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN1002UCA6 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X4-DSN3118-6 e2 D e2 k X4-DSN3118-6 Dim Min Max Typ A 0.09 0.16 0.11 b --0.25 b2 0.32 0.38 0.35 D 3.00 3.10 3.05 E 1.72 1.82 1.77 e --0.800 e2 --0.878 k --0.648 k1 --0.485 L 0.975 1.035 1.005 All Dimensions in mm R0.175 E b2 e Ø b(2x) L k1 A Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X4-DSN3118-6 C1 C1 Dimensions Y C C C1 D X Y Value (in mm) 0.800 0.878 0.250 1.005 0.350 X Ø D DMN1002UCA6 Document number: DS39839 Rev. 2 - 2 6 of 7 www.diodes.com October 2017 © Diodes Incorporated DMN1002UCA6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN1002UCA6 Document number: DS39839 Rev. 2 - 2 7 of 7 www.diodes.com October 2017 © Diodes Incorporated