<SMALL-SIGNAL TRANSISTOR> INA6006AS1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING INA6006AS1 is a silicon PNP transistor. UNIT：ｍｍ 4.0 3.0 7.5MAX It is designed with high voltage. FEATURE 0.1 14.0 ・Low voltage VCE(sat) = -0.5V(MAX) ・Complementary ： INC6006AS1 1.0 ・High voltage VCEO = -150V 13.0MIN 1.0 ・Small package for easy mounting. 0.45 2.5 2.5 0.4 APPLICATION 2.5 High voltage switching. ① ② ③ TERMINAL CONNECTOR ①：EMITTER JEITA：- ②：COLLECTOR JEDEC：- ③：BASE MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING UNIT -160 V -5 V VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage -150 V I CM Peak collector current -200 mA I C Collector current -100 mA PC Collector dissipation(Ta=25℃) 600 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING Type Name A06 □□W hFE ITEM LOT No ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS MIN LIMITS TYP MAX UNIT V(BR)CBO C to B break down voltage I C=-100μA，I E=0mA -160 - - V V(BR)EBO E to B break down voltage I E=-10μA，I C=0mA -5 - - V V(BR)CEO C to E break down voltage I C=-1mA，RBE=∞ -150 - - V ICBO Collector cut off current VCB=-120V，I E =0mA - - -100 nA IEBO Emitter cut off current VEB=-3V，I C=0mA - - -100 nA hFE1 DC forward current gain1 VCE=-5V，I C=-1mA 45 - - - hFE2 DC forward current gain2 VCE=-5V，I C=-10mA 90 - 270 - hFE3 DC forward current gain3 VCE=-5V，I C=-50mA 45 - - - VCE(sat)1 C to E saturation voltage1 I C=-10mA，I B=-1mA - - -0.2 V VCE(sat)2 C to E saturation voltage2 I C=-50mA，I B=-5mA - - -0.5 V VBE(sat)1 B to E saturation voltage1 I C=-10mA，I B=-1mA - - -1.0 V VBE(sat)2 B to E saturation voltage2 I C=-50mA，I B=-5mA - - -1.0 V VBE(on) B to E on voltage VCE=-5V，I C=-10mA - - -0.77 V fT Gain bandwidth product VCE=-10V，I E=10mA 100 - 300 MHz Cob Collector output capacitance VCB=-10V，I E=0mA，f=1MHz - 2.8 6 pF ISAHAYA ELECTRONICS CORPORATION <SMALL-SIGNAL TRANSISTOR> INA6006AS1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE TYPICIAL CHARACTERISTICS 800 -1000 85℃ 700 DC forward current gain hFE COLLECTOR DISSIPATION Pc (mW) DC forward current gain VS. Collector current COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE 600 500 400 300 200 -100 -40℃ 100 -10 -0.01 0 0 50 100 -0.1 150 Collector current IC(mA) VCE=-5V 85℃ -1 25℃ -40℃ -0.1 -0.01 -0.2 -0.4 -0.6 -0.8 -1 COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （ｍV) -100 -0 IC/IB=10 85℃ 25℃ -0.1 -40℃ -0.01 -0.01 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) COMMON EMITTER OUTPUT BASE TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT -70 COLLECTOR CURRENT IC (mA) IC/IB=10 -40℃ -1 -100 -1 BASE TO EMITTER VOLTAGE VBE (V) -10 -10 COLLECTOR TO EMITTERSATURATION VOLTAGE VS. COLLECTOR CURRENT COMMON EMITTER TRANSFER -10 -1 Collector current IC(mA) AMBIENT TEMPERATURE Ta (℃) COLLECTOR TO EMITTERSATURATION VOLTAGE VCE(sat) （ｍV) VCE=-5V 25℃ 25℃ 85℃ Ta=25℃ -60 IB=300uA -50 IB=250uA -40 IB=200uA -30 IB=150uA -20 IB=100uA IB=50uA -10 IB=0 -0.1 -0.01 -0 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) -100 -0 -5 -10 -15 COLLECTOR EMITTER VOLTAGE VCE (V) ISAHAYA ELECTRONICS CORPORATION -20 <SMALL-SIGNAL TRANSISTOR> INA6006AS1 PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE COLLECTOR OUTPUT CAPACITANCE Cob (pF) GAIN BAND WIDTH PRODUCT ｆT (MHｚ) 1000 Ta=25℃ VCE=-10V 100 10 1 0.1 1 10 100 100 Ta=25℃ f=1MHz 10 1 -0.1 -1 COLLECTOR INPUT CAPACITANCE Cib (pF) COLLECTOR INPUT CAPACITANCE VS. BASE TO EMITTER VOLTAGE 100 Ta=25℃ f=1MHz 10 1 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE VCB (V) EMITTER CURRENT IE (ｍA) -10 EMITTER TO BASE VOLTAGE VEB (V) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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