A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) ID TA = +25°C 460m @ VGS= 4.5V 0.9A 560m @ VGS= 2.5V 0.7A V(BR)DSS 30V Features and Benefits Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it 0.4mm Ultra Low Profile Package for Thin Application 0.6mm2 Package Footprint, 10 times Smaller than SOT23 Low VGS(th), can be driven directly from a battery Low RDS(on) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate 2kV Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Load Switch Portable Applications Power Management Functions Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 Body Diode S Gate D G ESD PROTECTED TO 2kV Bottom View Top View Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN3730UFB4-7 DMN3730UFB4-7B Notes: Marking NF NF Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN3730UFB4 Document number: DS35017 Rev. 8 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 Marking Information From date code 1527 (YYWW), this changes to: NF NF Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side NF NF NF NF NF NF DMN3730UFB4-7 NF Top View Bar Denotes Gate and Source Side NF = Part Marking Code NF NF NF DMN3730UFB4-7B Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS 30 Gate-Source Voltage VGSS ±8 (Note 6) Continuous Drain Current ID VGS = 4.5V TA = +70°C (Note 6) (Note 5) Pulsed Drain Current V 0.91 0.73 0.75 (Note 7) Unit IDM 3 Symbol Value 0.69 0.47 180 258 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: (Note 6) (Note 5) (Note 6) (Note 5) PD RθJA TJ, TSTG -55 to +150 Unit W °C/W °C 5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in steady-state condition. 6. Same as note 4, except the device measured at t 10 seconds. 7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10µs. DMN3730UFB4 Document number: DS35017 Rev. 8 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — 3 µA VGS = ±8V, VDS = 0V VGS(th) 0.45 — 0.95 V VDS = VGS, ID = 250μA — — — — — — 460 ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) RDS(on) 560 VGS = 4.5V, ID = 200mA mΩ 730 VGS = 2.5V, ID = 100mA VGS = 1.8V, ID = 75mA Forward Transfer Admittance |Yfs| 40 — — mS VDS = 3V, ID = 10mA Diode Forward Voltage (Note 8) VSD — 0.7 1.2 V VGS = 0V, IS = 300mA Input Capacitance Ciss — 64.3 — pF Output Capacitance Coss — 6.1 — pF Reverse Transfer Capacitance Crss — 4.5 — pF Gate Resistance Rg — 70 — Ω Total Gate Charge Qg — 1.6 — nC Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.2 — nC Turn-On Delay Time tD(on) — 3.5 — ns Turn-On Rise Time tr — 2.8 — ns Turn-Off Delay Time tD(off) — 38 — ns tf — 13 — ns DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Fall Time VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 8. Measured under pulsed conditions to minimize self-heating effect. Pulse width 300µs; duty cycle 2% 9. For design aid only, not subject to production testing. Notes: 2.0 2.0 VGS = 10V VGS = 4.5V VDS = 5V VGS = 2.5V 1.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2.0V VGS = 1.5V 1.0 0.5 1.5 1.0 0.5 TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMN3730UFB4 Document number: DS35017 Rev. 8 - 2 5 3 of 7 www.diodes.com 0 0 0.5 1 1.5 2 2.5 V GS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated 0.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN3730UFB4 0.6 VGS = 1.8V 0.4 VGS = 2.5V VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 VGS = 2.5V ID = 500mA 1.2 1.0 0.8 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.2 TA = 125°C TA = 85°C 0.4 TA = 25°C TA = -55°C 0.2 0 0.25 0.5 0.75 1 1.25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 VGS = 4.5V ID = 1.0A 0.2 0 -50 2.0 1.0 1.6 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature -25 0.8 ID = 1mA 0.6 ID = 250µA 0.4 TA = 25°C 1.2 0.8 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Document number: DS35017 Rev. 8 - 2 0.6 0 RDSON, DRAIN-SOURCE ON-RESISTANCE () R DSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A DMN3730UFB4 VGS = 4.5V 2 1.6 0.6 -50 0.8 4 of 7 www.diodes.com 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 100 10,000 IDSS, LEAKAGE CURRENT (nA) C, CAPACITANCE (pF) Ciss Coss 10 Crss TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C f = 1MHz 1 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 30 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA (t) = r(t) * R JA RJA = 253°C/W D = 0.02 0.01 D = 0.01 P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMN3730UFB4 Document number: DS35017 Rev. 8 - 2 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 5 of 7 www.diodes.com 10 100 1,000 May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 Seating Plane D b Pin #1 ID e E b2 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DMN3730UFB4 Document number: DS35017 Rev. 8 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated DMN3730UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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