LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16BST5G FEATURE ƽSmall plastic SMD package. S-LBAS16BST5G ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. ƽWe declare that the material of product compliance with RoHS requirements. 1 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOD882 LBAS16BST1G 3* 5000/Tape&Reel LBAS16BST3G 3* 8000/Tape&Reel LBAS16BST5G 3* 10000/Tape&Reel 2 Anode 1 Cathode *Rotated 90° MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol V R IF I FM(surge) Value 75 200 500 Unit Vdc mAdc mAdc Symbol Max Unit PD 200 mW 1.57 mW/°C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature R θJA T J , T stg 635 -55to+150 °C/W °C **FR-4 Minimum Pad ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max — — — 1.0 50 30 75 — Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 75 Vdc) (V R = 75 Vdc, T J = 150°C) (V R = 25 Vdc, T J = 150°C) µAdc IR Reverse Breakdown Voltage (I BR = 100 µAdc) V (BR) Forward Voltage (I F = 1.0 mAdc) V F Vdc mV — — — — 715 855 1000 1250 CD — 2.0 pF Forward Recovery Voltage (I F = 10 mAdc, t r = 20 ns) V FR — 1.75 Vdc Reverse Recovery Time (I F = I R = 10 mAdc, R L = 50 Ω) t rr — 4.0 ns QS — 45 pC (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance (V R = 0, f = 1.0 MHz) Stored Charge (I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω) Rev.A 1/3 LESHAN RADIO COMPANY, LTD. LBAS16BST5G,S-LBAS16BST5G 2.0 k 820 Ω +10 V 100 µH IF 0.1 µF tp tr 0.1µF IF t t rr 10% t 90% DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE i IR INPUT SIGNAL V R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) R Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 100 10 I R , REVERSE CURRENT ( A) T A = –40˚C 10 T A = 25˚C 1.0 0.1 T A = 125˚C 1.0 T A = 85˚C 0.1 T A = 55˚C 0.01 T A = 25˚C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) T A = 150˚C T A = 85˚C 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance Rev.A 2/3 LESHAN RADIO COMPANY, LTD. LBAS16BST5G,S-LBAS16BST5G SOD882 DIMENSION OUTLINE: Unit:mm Rev.A 3/3