Taychipst BZT52B10 Small signal diode Datasheet

BZT52B2V4 THRU BZT52B75
2.45V-76.5V 2A-5A
Small Signal Diode
FEATURES
•
SOD-123F
Wide zener voltage range selection : 2.4V to 75V
VZTolerance Selection of ±2%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
•
•
•
•
MECHANICAL DATA
•
•
Case : Flat lead SOD-123 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
•
•
•
High temperature soldering guaranteed:
° 260
Polarity : Indicated by cathode band
Weight : 8.85±0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Symbol
Value
Units
PD
500
mW
Forward Voltage
IF=10mA
VF
1
V
Thermal Resistance (Junction to Ambient)
(Note 1)
RθJA
350
°C/W
TJ, TSTG
-65 to + 150
°C
Junction and Storage Temperature Range
Notes:1. Valid provided that electrodes are kept at ambient temperature
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BZT52B2V4 THRU BZT52B75
2.45V-76.5V 2A-5A
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Voltage = 1V Maximum @ IF = 10 mA for all part numbers
VZ @ IZT (Volt)
IZT(mA)
ZZT @ IZT(Ω)
Max
IZK(mA)
ZZK @ IZK(Ω)
Max
IR @ VR(μA)
Max
VR(V)
2.45
5
100
1
564
45
1
2.65
2.75
5
100
1
564
18
1
2.94
3.06
5
100
1
564
9
1
3.3
3.23
3.37
5
95
1
564
4.5
1
BZT52B3V6
3.6
3.53
3.67
5
90
1
564
4.5
1
BZT52B3V9
3.9
3.82
3.98
5
90
1
564
2.7
1
BZT52B4V3
4.3
4.21
4.39
5
90
1
564
2.7
1
BZT52B4V7
4.7
4.61
4.79
5
80
1
470
2.7
2
BZT52B5V1
5.1
5
5.2
5
60
1
451
1.8
2
BZT52B5V6
5.6
5.49
5.71
5
40
1
376
0.9
2
BZT52B6V2
6.2
6.08
6.32
5
10
1
141
2.7
4
BZT52B6V8
6.8
6.66
6.94
5
15
1
75
1.8
4
BZT52B7V5
7.5
7.35
7.65
5
15
1
75
0.9
5
BZT52B8V2
8.2
8.04
8.36
5
15
1
75
0.63
5
BZT52B9V1
9.1
8.92
9.28
5
15
1
94
0.45
6
BZT52B10
10
9.8
10.2
5
20
1
141
0.18
7
BZT52B11
11
10.78
11.22
5
20
1
141
0.09
8
BZT52B12
12
11.76
12.24
5
25
1
141
0.09
8
BZT52B13
13
12.74
13.26
5
30
1
160
0.09
8
BZT52B15
15
14.7
15.3
5
30
1
188
0.045
10.5
BZT52B16
16
15.68
16.32
5
40
1
188
0.045
11.2
BZT52B18
18
17.64
18.36
5
45
1
212
0.045
12.6
BZT52B20
20
19.6
20.4
5
55
1
212
0.045
14
BZT52B22
22
21.56
22.44
5
55
1
235
0.045
15.4
BZT52B24
24
23.52
24.48
5
70
1
235
0.045
16.8
BZT52B27
27
26.46
27.54
2
80
0.5
282
0.045
18.9
BZT52B30
30
29.4
30.6
2
80
0.5
282
0.045
21
BZT52B33
33
32.34
33.66
2
80
0.5
306
0.045
23
BZT52B36
36
35.28
36.72
2
90
0.5
329
0.045
25.2
BZT52B39
39
38.22
39.78
2
130
0.5
329
0.045
27.3
BZT52B43
43
42.14
43.86
2
150
0.5
353
0.045
30.1
BZT52B47
47
46.06
47.94
2
170
0.5
353
0.045
33
BZT52B51
51
49.98
52.02
2
180
0.5
376
0.045
35.7
BZT52B56
56
54.88
57.12
2
200
0.5
400
0.045
39.2
BZT52B62
62
60.76
63.24
2
215
0.5
423
0.045
43.4
BZT52B68
68
66.64
69.36
2
240
0.5
447
0.045
47.6
BZT52B75
75
73.5
76.5
2
255
0.5
470
0.045
52.5
Part Number
Nom
Min
Max
BZT52B2V4
2.4
2.35
BZT52B2V7
2.7
BZT52B3V0
3
BZT52B3V3
Notes:
1. The Zener Voltage (VZ) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the nominal zener voltage of±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest Taiwan semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value
equal to 10% of the DC zener current (IZT or IZK) is superimposed to IZT or IZK.
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BZT52B2V4 THRU BZT52B75
2.45V-76.5V 2A-5A
Small Signal Diode
RATINGS AND CHARACTERISTIC CURVES
BZT52B2V4 THRU BZT52B75
FIG 2 Zener Breakdown Characteristics
FIG 1 Typical Forward Characteristics
100
Zener Current (mA)
Forward Current (mA)
1000
100
Ta=25°C
10
Ta=25°C
10
1
0.10
1
0
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
1
2
3
6
7
8
9
10
11
12
Power Dissipation (mW)
500
10
Zener Current (mA)
5
FIG 4 Admissible Power Disspation Curve
FIG 3 Zener Breakdown Characteristics
100
1
0
400
300
200
100
0
0
15
25
35
45
55
65
0
75
50
Zener Voltage (V)
100
150
200
Ambient Tempeture (°C)
FIG 5 Typical Capacitance
FIG 6 Effect of Zener Voltage on Impedence
1000
1000
100
Dynamic Impedence (Ώ)
Capacitance(pF)
4
Zener Voltage (V)
Forward Voltage (V)
100
1V Bias
Ta=150°C
10
Bias at 50% of VZ(Nom)
Iz=1mA
Ta=25°C
Iz=5mA
10
Iz=20m
1
1
1
10
100
10
100
Zener Voltage (V)
Zener Voltage (V)
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