, Li ne. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAC320 MAC320A TttBCS Silicon Bidirectional Thyristors TRIACs 20 AMPERES RMS 200 thru 800 VOLTS designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. . Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability . Gate Triggering Guaranteed in Three Modes (MAC320 Series) or Four Modes (MAC320A Series) (TO-220AB1 MAXIMUM RATINGS (Tc = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Off-State VoltageO) (Tj = -40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) VDRM On-State Current RMS (Tc = +75°C) (Full Cycle, Sine Wave, 50 to 60 Hz) Volts VGM 10 Volts 'T(RMS) 20 Amp 150 Amp 20 Watts Peak Surge Current (One Full Cycle, 60 Hz, TC = +75°C) preceded and followed by rated current Peak Gate Power (TC = +75°C, Pulse Width = 2 us) Unit 200 400 600 800 MAC320-4, MAC320A4 MAC320-6, MAC320A6 MAC320-8, MAC320A8 MAC320-10, MAC320A10 Peak Gate Voltage Value PGM 0.5 Average Gate Power (TC = +75°C, t = 8.3 ms) Watt Amp Peak Gate Current -40 to+125 Operating Junction Temperature Range Storage Temperature Range °C Tstg -40 to+150 Symbol Max Unit R9JC 1.8 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors MAC320 Series MAC320A Series ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted.) Symbol Characteristic Peak Blocking Current (VD Rated VDRM. Gate Open) Min Typ Max Unit — — 10 2 HA mA — 1.4 1.7 Volts !DRM Tj = 25°C Tj = +125°C Peak On-State Voltage (Either Direction) (IjM = 28 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle s; 2%) VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2 (+), G(+); MT2 (+), G(-); MT2 (-), G(-) MT2 (-), G(+) "A" SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2 (+), G(+); MT2 (+). G(-); MT2 (-), G(-) MT2 (-), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM. RL = 1° kft, Tj =+110°C) MT2 (+), G(+); MT2 (-), G(-); MT2 (+), G(-); MT2 (-), G(+) "A" SUFFIX ONLY VGT mA — — 50 75 0.9 1.4 2 2.5 Volts 0.2 0.2 Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 200 mA) IH ~ 6 40 mA Turn-On Time (VD = Rated V DRM , ITM = 28 A, IQT = 120 mA, Rise Time = 0.1 (is, Pulse Width = 2 jis) <gt ~ 1.5 ~ US dv/dt(C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, 'TM = 28 A, Commutating di/dt = 10 A/ms, Gate Unenergized, TC = +75°C) FIGURE 1 — RMS CURRENT DERATING 0 2.0 4.0 6.0 8.0 10 12 14 16 !T(RMS). RMS ON-STATE CURRENT (AMP) 5 V/ns FIGURE 2 — ON-STATE POWER DISSIPATION 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 !T(RMS). RMS ON-STATE CURRENT (AMP) 18 20