Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resinstance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1 1.6 3 2.0 0.15 0.85 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V 3 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% V 12 A 1 W Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 30 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=1.5A 1.2 2.1 Marking : KM Unit max V 1 µA ±10 µA 2.6 V 3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13001 TS IM TA-3099 No.6901-1/4 MCH3412 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V ID=1A, VGS=-4V 64 84 mΩ 105 150 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 180 pF Output Capacitance Coss VDS=10V, f=1MHz 42 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 7 ns Rise Time tr td(off) See specified Test Circuit 2.8 ns See specified Test Circuit 18.5 ns tf See specified Test Circuit 4.4 ns Turn-OFF Delay Time Fall Time Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=10V, ID=3A 4.9 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3A 0.93 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 0.63 Diode Forward Voltage VSD IS=3A, VGS=0 0.85 nC 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=1.5A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G P.G MCH3412 50Ω S ID -- VDS 4.0 1.6 VGS=2.5V 1.2 2.5 2.0 1.5 1.0 0.8 25 °C 0.5 0.4 --25°C 10.0 2.0 3.0 C V 2.4 V 0 3. Ta=7 5° 8.0V 2.8 Drain Current, ID -- A 3.2 Drain Current, ID -- A VDS=10V 3.5 6.0V 3.6 ID -- VGS 4.0 V 5.0V 4.0 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 250 0.5 IT02942 4.5 IT02943 RDS(on) -- Ta 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 200 1.0A 150 ID=1.5A 100 50 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT02944 200 150 , 1.0A I D= 100 =4V VGS =10V A, V GS I D=1.5 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02945 No.6901-2/4 MCH3412 3 25° C 2 C 5° 1.0 = Ta 7 75° C --2 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V IT02946 1.2 IT02947 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=10V 7 f=1MHz 7 5 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 3 SW Time -- ID 100 td(off) 2 10 td(on) 7 5 tf 3 tr 3 Ciss 2 100 7 5 Coss 3 2 Crss 2 10 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 IT02948 3 2 VDS=10V ID=3A 9 10 7 5 6 5 4 3 3 2 1 3 2 1 2 3 4 5 6 Total Gate Charge, Qg -- nC IT02950 PD -- Ta 1.2 1.0 20 25 30 IT02949 ASO IDP=12A <10µs 1m ID=3A s 10 m DC 100 op ms er ati on 3 2 2 0 15 1.0 7 5 0.1 7 5 0 10 s 100µs Drain Current, ID -- A 8 7 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 2 3 2 2 0.1 0.01 Allowable Power Dissipation, PD -- W VGS=0 Ta=7 5°C 25°C 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S VDS=10V 7 IF -- VSD 10 7 5 --25° C yfs -- ID 10 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT02951 M ou nt 0.8 ed on ac er am ic 0.6 bo ar 0.4 d( 90 0m m2 ✕ 0.8 m 0.2 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02952 No.6901-3/4 MCH3412 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.6901-4/4