NSC LMV341IDCKRE4 Rail-to-rail output cmos operational amplifiers with shutdown Datasheet

LMV341, LMV342, LMV344
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SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
RAIL-TO-RAIL OUTPUT CMOS OPERATIONAL AMPLIFIERS
WITH SHUTDOWN
Check for Samples: LMV341, LMV342, LMV344
FEATURES
1
•
•
•
•
•
•
•
•
•
•
•
2.7-V and 5-V Performance
Rail-to-Rail Output Swing
Input Bias Current…1 pA Typ
Input Offset Voltage…0.25 mV Typ
Low Supply Current…100 μA Typ
Low Shutdown Current…45 pA Typ
Gain Bandwidth of 1 MHz Typ
Slew Rate…1 V/μs Typ
Turn-On Time From Shutdown…5 μs Typ
Input Referred Voltage Noise (at 10 kHz)…
20 nV/√Hz
ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
APPLICATIONS
•
•
•
•
•
•
•
•
•
Cordless/Cellular Phones
Consumer Electronics (Laptops, PDAs)
Audio Pre-Amps for Voice
Portable/Battery-Powered Electronic
Equipment
Supply-Current Monitoring
Battery Monitoring
Buffers
Filters
Drivers
LMV341 . . . DBV (SOT-23) OR DCK (SC-70) PACKAGE
(TOP VIEW)
IN+
GND
IN−
1
6
2
5
3
4
V+
SHDN
OUT
LMV342 . . . D (SOIC) OR DGK (MSOP) PACKAGE
(TOP VIEW)
1OUT
1IN−
1IN+
GND
1
8
2
7
3
6
4
5
V+
2OUT
2IN−
2IN+
LMV344 . . . D (SOIC) OR PW (TSSOP) PACKAGE
(TOP VIEW)
1OUT
1IN−
1IN+
V+
2IN+
2IN−
2OUT
1
14
2
13
3
12
4
11
5
10
6
7
9
8
4OUT
4IN−
4IN+
GND
3IN+
3IN−
3OUT
DESCRIPTION/ORDERING INFORMATION
The LMV341, LMV342, LMV344 devices are single, dual, and quad CMOS operational amplifiers, respectively,
with low voltage, low power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low
input bias current of 1 pA (typ) and an offset voltage of 0.25 mV (typ). The single supply amplifier is designed
specifically for low-voltage (2.7 V to 5 V) operation, with a wide common-mode input voltage range that typically
extends from –0.2 V to 0.8 V from the positive supply rail. The LMV341 (single) also offers a shutdown (SHDN)
pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 33 nA (typ).
Additional features of the family are a 20-nV/√Hz voltage noise at 10 kHz, 1-MHz unity-gain bandwidth, 1-V/μs
slew rate, and 100-μA current consumption per channel.
Offered in both the SOT-23 and smaller SC-70 packages, the LMV341 is suitable for the most space-constraint
applications. The LMV342 dual device is offered in the standard SOIC and MSOP packages. An extended
industrial temperature range from –40°C to 125°C makes these devices suitable in a wide variety of commercial
and industrial environments.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2012, Texas Instruments Incorporated
LMV341, LMV342, LMV344
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
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ORDERING INFORMATION
PACKAGE (1)
TA
SOT-23 – DBV
Single
SC-70 – DCK
SOIC – D
–40°C to 125°C
Dual
MSOP/VSSOP – DGK
SOIC – D
Quad
TSSOP – PW
(1)
(2)
TOP-SIDE MARKING (2)
ORDERABLE PART NUMBER
Reel of 3000
LMV341IDBVR
RC9_
Reel of 250
LMV341IDBVT
Product Preview
Reel of 3000
LMV341IDCKR
R4_
Reel of 250
LMV341IDCKT
Product Preview
Tube of 75
LMV342ID
Reel of 2500
LMV342IDR
Reel of 250
LMV342IDGK
Reel of 2500
LMV342IDGKR
Tube of 50
LMV344ID
Reel of 2500
LMV344IDR
Tube of 90
LMV344IPW
Reel of 2000
LMV344IPWR
MV342I
RP_
LMV344I
MV344I
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
DBV/DCK/DGK: The actual top-side marking has one additional character that designates the wafer fab/assembly site.
Figure 1. APPLICATION CIRCUIT: SAMPLE-AND-HOLD CIRCUIT
V+
V+
−
−
VO
+
VI
+
C = 200 pF
Sample
Clock
2
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SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
ABSOLUTE MAXIMUM RATINGS (1)
over operating free-air temperature range (unless otherwise noted)
MIN
(2)
V+
Supply voltage
VID
Differential input voltage (3)
VI
Input voltage range (either input)
0
D package
θJA
Package thermal impedance (4)
(5)
TJ
Operating virtual junction temperature
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
8 pin
MAX
UNIT
5.5
V
±5.5
V
5.5
V
97
14 pin
86
DBV package
165
DCK package
259
DGK package
172
PW package
113
–65
°C/W
150
°C
150
°C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values (except differential voltages and V+ specified for the measurement of IOS) are with respect to the network GND.
Differential voltages are at IN+ with respect to IN−.
Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient
temperature is PD = (TJ(max) – TA)/θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
V+
Supply voltage (single-supply operation)
2.5
5.5
V
TA
Operating free-air temperature
–40
125
°C
ESD PROTECTION
TEST CONDITIONS
Human-Body Model
Machine Model
Copyright © 2004–2012, Texas Instruments Incorporated
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TYP
UNIT
2000
V
200
V
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SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
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ELECTRICAL CHARACTERISTICS
V+ = 2.7 V, GND = 0 V, VIC = VO = V+/2, RL > 1 MΩ (unless otherwise noted)
PARAMETER
VIO
Input offset voltage
αVIO
Average temperature coefficient
of input offset voltage
IIB
Input bias current
TEST CONDITIONS
TA
MIN
25°C
3
6.6
0 ≤ VICR ≤ 1.6 V
Full range
50
25°C
65
Full range
60
25°C
0
–0.2
to 1.9
113
2.7 V ≤ V+ ≤ 5 V
VICR
Common-mode input voltage
range
CMRR ≥ 50 dB
RL = 10 kΩ to 1.35 V
Large-signal voltage gain (2)
RL = 2 kΩ to 1.35 V
Low level
RL = 2 kΩ to 1.35 V
High level
Output swing
(delta from supply rails)
Low level
RL = 10 kΩ to 1.35 V
High level
ICC
–40°C to 125°C
56
Supply-voltage rejection ratio
VO
250
25°C
kSVR
25°C
78
Full range
70
25°C
72
Full range
64
25°C
26
Full range
V
dB
60
60
95
25°C
5
Full range
30
mV
40
25°C
5.3
30
100
170
Full range
40
230
20
32
18
24
15
24
μA
IOS
Output short-circuit current
SR
Slew rate
RL = 10 kΩ (3)
25°C
1
V/μs
GBM
Unity-gain bandwidth
RL = 10 kΩ, CL = 200 pF
25°C
1
MHz
Φm
Phase margin
RL = 100 kΩ
25°C
72
deg
Gm
Gain margin
RL = 100 kΩ
25°C
20
dB
Vn
Equivalent input noise voltage
f = 1 kHz
25°C
40
nV/√Hz
In
Equivalent input noise current
f = 1 kHz
25°C
0.001
pA/√Hz
THD
Total harmonic distortion
f = 1 kHz, AV = 1,
RL = 600 Ω, VI = 1 VPP
25°C
0.017
%
LMV344
25°C
1.7
95
25°C
LMV341,
LMV342
nA
dB
103
Full range
Sourcing
pA
dB
82
24
mV
fA
80
Full range
25°C
Supply current (per channel)
120
–40°C to 85°C
25°C
Common-mode rejection ratio
AV
1
UNIT
μV/°C
1.7
0 ≤ VICR ≤ 1.7 V
CMRR
4
4.5
Full range
Input offset current
MAX
0.25
Full range
25°C
IIO
TYP (1)
Sinking
(1)
(2)
(3)
4
mA
Typical values represent the most likely parametric norm.
GND + 0.2 V ≤ VO ≤ V+ – 0.2 V
Connected as voltage follower with 2-VPP step input. Number specified is the slower of the positive and negative slew rates.
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SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
SHUTDOWN CHARACTERISTICS
V+ = 2.7 V, GND = 0 V, VIC = VO = V+/2, RL > 1 MΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ICC(SHDN)
Supply current in shutdown mode
t(on)
Amplifier turn-on time
VSD
VSD = 0 V
TA
25°C
Shutdown pin voltage range
Shutdown mode
TYP
MAX
0.045
1000
nA
1.5
μA
Full range
25°C
ON mode
MIN
25°C
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μs
5
1.7 to 2.7 2.4 to 2.7
0 to 1
UNIT
0 to 0.8
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V
5
LMV341, LMV342, LMV344
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
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ELECTRICAL CHARACTERISTICS
V+ = 5 V, GND = 0 V, VIC = VO = V+/2, RL > 1 MΩ (unless otherwise noted)
PARAMETER
VIO
Input offset voltage
αVIO
Average temperature coefficient
of input offset voltage
IIB
Input bias current
TEST CONDITIONS
TA
MIN
25°C
CMRR
Common-mode rejection ratio
kSVR
Supply-voltage rejection ratio
2.7 V ≤ V+ ≤ 5 V
VICR
Common-mode input
voltage range
CMRR ≥ 50 dB
0 ≤ VICR ≤ 3.9 V
RL = 10 kΩ to 2.5 V
Large-signal voltage gain (2)
AV
RL = 2 kΩ to 2.5 V
Low level
RL = 2 kΩ to 2.5 V
High level
Output swing
(delta from supply rails)
VO
Low level
RL = 10 kΩ to 2.5 V
High level
ICC
1
375
–40°C to 125°C
5
6.6
56
Full range
50
25°C
65
Full range
60
25°C
0
–0.2
to 4.2
116
25°C
78
Full range
70
25°C
72
Full range
64
25°C
34
Full range
V
dB
60
60
95
25°C
7
Full range
30
mV
40
25°C
7
30
107
200
Full range
40
260
85
113
85
113
50
75
μA
IOS
Output short-circuit current
SR
Slew rate
RL = 10 kΩ (3)
25°C
1
V/μs
GBM
Unity-gain bandwidth
RL = 10 kΩ, CL = 200 pF
25°C
1
MHz
Φm
Phase margin
RL = 100 kΩ
25°C
70
deg
Gm
Gain margin
RL = 100 kΩ
25°C
20
dB
Vn
Equivalent input noise voltage
f = 1 kHz
25°C
39
nV/√Hz
In
Equivalent input noise current
f = 1 kHz
25°C
0.001
pA/√Hz
THD
Total harmonic distortion
f = 1 kHz, AV = 1,
RL = 600 Ω, VI = 1 VPP
25°C
0.012
%
LMV344
25°C
4
95
25°C
LMV341,
LMV342
nA
dB
107
Full range
Sourcing
pA
dB
82
32
mV
fA
86
Full range
25°C
Supply current (per channel)
200
–40°C to 85°C
25°C
UNIT
μV/°C
1.9
25°C
0 ≤ VICR ≤ 4 V
4
4.5
Full range
Input offset current
MAX
0.25
Full range
25°C
IIO
TYP (1)
Sinking
(1)
(2)
(3)
6
mA
Typical values represent the most likely parametric norm.
GND + 0.2 V ≤ VO ≤ V+ – 0.2 V
Connected as voltage follower with 2-VPP step input. Number specified is the slower of the positive and negative slew rates.
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SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
SHUTDOWN CHARACTERISTICS
V+ = 5 V, GND = 0 V, VIC = VO = V+/2, RL > 1 MΩ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
ICC(SHDN)
Supply current in shutdown mode
t(on)
Amplifier turn-on time
VSD
VSD = 0 V
TA
25°C
Shutdown pin voltage range
Shutdown mode
TYP
0.033
Full range
25°C
ON mode
MIN
25°C
Copyright © 2004–2012, Texas Instruments Incorporated
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MAX
1
1.5
UNIT
μA
μs
5
3.1 to 5
4.5 to 5
0 to 1
0 to 0.8
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V
7
LMV341, LMV342, LMV344
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
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TYPICAL CHARACTERISTICS
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
INPUT BIAS CURRENT
vs
TEMPERATURE
130
1000
V+ = 5 V
120
125°C
100
90
80
IIB − Input Bias Current − pA
ICC − Supply Current − µA
110
85°C
25°C
70
60
50
−40°C
100
10
1
40
30
1.5
2
2.5
3
3.5
4
4.5
0.1
−40 −20
5
0
20
40
60 80 100 120
TA − Free-Air Temperature − °C
Figure 3.
VCC − Supply Voltage − V
Figure 2.
OUTPUT VOLTAGE SWING
vs
SUPPLY VOLTAGE
35
7
RL = 2 kΩ
VO − Output Swing From Supply Voltage − mV
VO − Output Swing From Supply Voltage − mV
OUTPUT VOLTAGE SWING
vs
SUPPLY VOLTAGE
30
Negative Swing
25
20
Positive Swing
15
10
1.5
8
140
2
2.5
3
3.5
4
VCC − Supply Voltage − V
Figure 4.
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4.5
5
RL = 10 kΩ
6.5
6
Negative Swing
5.5
5
4.5
4
Positive Swing
3.5
3
1.5
2
2.5
3
3.5
4
4.5
5
VCC − Supply Voltage − V
Figure 5.
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SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
TYPICAL CHARACTERISTICS (continued)
SOURCE CURRENT
vs
OUTPUT VOLTAGE
SOURCE CURRENT
vs
OUTPUT VOLTAGE
1000
1000
V+ = 5 V
V+ = 2.7 V
IS − Source Current − mA
IS − Source Current − mA
−40°C
100
100
−40°C
25°C
10
85°C
1
125°C
10
25°C
85°C
1
125°C
0.1
0.1
0.01
0.001
0.01
0.1
1
VO − Output Voltage Referenced to V+ (V)
Figure 6.
0.01
0.001
10
0.01
0.1
1
VO − Output Voltage Referenced to V+ (V)
Figure 7.
SINK CURRENT
vs
OUTPUT VOLTAGE
SINK CURRENT
vs
OUTPUT VOLTAGE
1000
V+ = 2.7 V
V+ = 5 V
100
100
−40°C
−40°C
IS − Sink Current − mA
IS − Sink Current − mA
1000
10
25°C
85°C
1
125°C
0.1
0.01
0.001
10
10
25°C
85°C
1
125°C
0.1
0.01
0.1
1
VO − Output Voltage Referenced to V− (V)
Figure 8.
10
0.01
0.001
0.01
0.1
1
VO − Output Voltage Referenced to V− (V)
Figure 9.
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9
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TYPICAL CHARACTERISTICS (continued)
OFFSET VOLTAGE
vs
COMMON-MODE VOLTAGE
OFFSET VOLTAGE
vs
COMMON-MODE VOLTAGE
1
1
V+ = 5 V
0.5
0.5
0
0
VIO − Offset Voltage − mV
VIO − Offset Voltage − mV
V+ = 2.7 V
−0.5
−1
125°C
−1.5
85°C
−2
25°C
−0.5
−1
125°C
85°C
−1.5
25°C
−2
−40°C
−40°C
−2.5
−2.5
−3
−0.2
0.8
1.8
−3
−0.2
2.8
VIC − Common-Mode Voltage − V
Figure 10.
0.8
1.8
2.8
3.8
4.8
VIC − Common-Mode Voltage − V
Figure 11.
INPUT VOLTAGE
vs
OUTPUT VOLTAGE
INPUT VOLTAGE
vs
OUTPUT VOLTAGE
300
300
V+ /GND = ±1.35 V
V+ /GND = ±2.5 V
VI − Input Voltage − µV
VI − Input Voltage − µV
200
RL = 2 kΩ
100
0
RL = 10 kΩ
200
0
−100
−200
−200
−2
−1
0
1
2
3
RL = 2 kΩ
100
−100
−300
−3
−300
−1.5
RL = 10 kΩ
−1
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−0.5
0
0.5
1
1.5
VO − Output Voltage − V
VO − Output Voltage − V
Figure 12.
10
5.8
Figure 13.
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TYPICAL CHARACTERISTICS (continued)
SLEW RATE
vs
SUPPLY VOLTAGE
SLEW RATE
vs
TEMPERATURE
2.5
1.9
2.3
Falling Edge
1.7
1.5
SR − Slew Rate − V/µs
SR − Slew Rate − V/µs
2.1
1.3
Rising Edge
1.1
0.9
0.7
0.5
2
1.9
Falling Edge
1.7
1.5
1.3
Rising Edge
1.1
0.9
RL = 10 kΩ
AV = 1
VI = 0.8 VPP for V+ < 2.7 V
VI = 2 VPP for V+ > 2.7 V
1.5
RL = 10 kΩ
AV = 1
VI = 2 VPP
V+ = 2.7 V
0.7
2.5
3
3.5
4
VCC − Supply Voltage − V
Figure 14.
4.5
0.5
−40 −20
5
0
20 40 60
80 100 120 140
TA – Free-Air Temperature – °C
Figure 15.
SLEW RATE
vs
TEMPERATURE
CMRR
vs
FREQUENCY
2.5
SR − Slew Rate − V/µs
2.1
1.9
90
70
Falling Edge
1.7
1.5
1.3
Rising Edge
60
50
30
0.9
20
0.7
10
0
20 40 60
80 100 120 140
TA – Free-Air Temperature – °C
Figure 16.
2.7 V
40
1.1
0.5
−40 −20
5V
80
Gain − dB
2.3
100
RL = 10 kΩ
AV = 1
VI = 2 VPP
V+ = 5 V
VI = V+ /2
RL = 5 kΩ
0
100
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1k
10k
100k
f − Frequency − Hz
Figure 17.
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1M
11
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TYPICAL CHARACTERISTICS (continued)
PSRR
vs
FREQUENCY
100
INPUT VOLTAGE NOISE
vs
FREQUENCY
220
+PSRR (2.7 V)
90
200
VI − Input Voltage Noise − nV/ Hz
−PSRR (2.7 V)
80
Gain − dB
70
60
−PSRR (5 V)
+PSRR (5 V)
50
40
30
20
10
0
100
180
160
140
120
100
80
5V
2.7 V
60
40
20
RL = 5 kΩ
1k
10k
100k
f − Frequency − Hz
Figure 18.
1M
0
10M
10
THD+N − Total Harmonic Distortion + Noise − %
THD+N − Total Harmonic Distortion + Noise − %
10
1
5V
AV = 10
2.7 V
AV = 10
2.7 V
AV = 1
0.01
5V
AV = 1
0.001
0.0001
10
100
1k
10k
f − Frequency − Hz
100k
f = 10 kHz
RL = 600 Ω
5V
AV = 10
1
2.7 V
AV = 10
0.1
5V
AV = 1
0.01
0.001
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2.7 V
AV = 1
0.01
0.1
1
VO − Output Voltage − VPP
Figure 21.
Figure 20.
12
10k
TOTAL HARMONIC DISTORTION + NOISE
vs
OUTPUT VOLTAGE
RL = 600 Ω
VO = 1 VPP for V+ = 2.7 V
VO = 2.5 VPP for V+ = 5 V
0.1
1k
f − Frequency − Hz
Figure 19.
TOTAL HARMONIC DISTORTION + NOISE
vs
FREQUENCY
10
100
10
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TYPICAL CHARACTERISTICS (continued)
GAIN AND PHASE MARGIN
vs
FREQUENCY
(TA = –40°C, 25°C, 125°C)
160
140
V+ = 5 V
RL = 2 kΩ
Phase
120
140
Gain − dB
100
80
−40°C
Gain
60
80
−40°C
25°C
60
40
125°C
20
−20
40
25°C
125°C
0
Phase Margin − Deg
120
100
20
0
1k
10k
100k
1M
10M
f − Frequency − Hz
Figure 22.
GAIN AND PHASE MARGIN
vs
FREQUENCY
(RL = 600 Ω, 2 kΩ, 100 kΩ)
140
120
140
Phase
120
100
80
RL = 600 Ω
60
RL = 2 kΩ
Gain
RL = 100 kΩ
80
60
40
RL = 100 kΩ
Phase Margin − Deg
100
Gain − dB
160
V+ = 2.7 V
Closed-Loop
Gain = 60 dB
40
20
RL = 2 kΩ
0
RL = 600 Ω
20
0
−20
1k
10k
100k
1M
10M
f − Frequency − Hz
Figure 23.
Copyright © 2004–2012, Texas Instruments Incorporated
Product Folder Link(s): LMV341 LMV342 LMV344
Submit Documentation Feedback
13
LMV341, LMV342, LMV344
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
GAIN AND PHASE MARGIN
vs
FREQUENCY
(RL = 600 Ω, 2 kΩ, 100 kΩ)
160
140
120
V+ = 5 V
Closed-Loop
Gain = 60 dB
Phase
140
Gain − dB
100
80
RL = 600 Ω
Gain
60
80
RL = 2 kΩ
RL = 100 kΩ
60
40
RL = 100 kΩ
20
40
RL = 2 kΩ
RL = 600 Ω
0
−20
Phase Margin − Deg
120
100
1k
10k
20
100k
f − Frequency − Hz
Figure 24.
0
10M
1M
GAIN AND PHASE MARGIN
vs
FREQUENCY
(CL = 0 pF, 100 pF, 500 pF, 1000 pF)
140
120
100
Phase
V+ = 5 V
RL = 600 Ω
Closed-Loop Gain = 60 dB
CL = 0 pF
100
80
Gain − dB
80
40
CL = 500 pF
Gain
CL = 1000 pF
60
20
0
40
CL = 0 pF
20
−40
0
CL = 500 pF
−20
−60
CL = 1000 pF
−40
14
−20
Phase Margin − Deg
60
CL = 100 pF
1k
Submit Documentation Feedback
10k
100k
f − Frequency − Hz
Figure 25.
CL = 100 pF
1M
10M
−80
Copyright © 2004–2012, Texas Instruments Incorporated
Product Folder Link(s): LMV341 LMV342 LMV344
LMV341, LMV342, LMV344
www.ti.com
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
TYPICAL CHARACTERISTICS (continued)
6
Input
Input
TA = −40°C
RL = 2 kΩ
V+/GND = ±2.5 V
−0.05
−0.1
0.05
−0.15
0
VI − Input Voltage − V
VO − Output Voltage − V
0
0.15
VO − Output Voltage − V
0.05
0.2
0.1
LARGE-SIGNAL NONINVERTING RESPONSE
2
−0.2
−0.05
5
1
4
0
−1
3
2
TA = −40°C
RL = 2 kΩ
V+/GND = ±2.5 V
1
−3
0
−4
−1
−5
Output
−0.1
0.25
−2
VI − Input Voltage − V
0.25
SMALL-SIGNAL NONINVERTING RESPONSE
0.1
Output
−0.25
4 µs/div"
Figure 26.
−2
SMALL-SIGNAL NONINVERTING RESPONSE
0.1
4 µs/div"
Figure 27.
−6
LARGE-SIGNAL NONINVERTING RESPONSE
2
6
Input
0.1
TA = 25°C
RL = 2 kΩ
V+/GND = ±2.5 V
−0.05
−0.1
0.05
−0.15
0
−0.2
−0.05
VI − Input Voltage − V
VO − Output Voltage − V
0
0.15
VO − Output Voltage − V
0.05
0.2
5
1
4
0
3
2
−1
TA = 25°C
RL = 2 kΩ
V+/GND = ±2.5 V
−2
1
−3
0
−4
−1
VI − Input Voltage − V
Input
−5
Output
Output
−0.1
−0.25
4 µs/div"
Figure 28.
−2
4 µs/div"
−6
Figure 29.
Copyright © 2004–2012, Texas Instruments Incorporated
Product Folder Link(s): LMV341 LMV342 LMV344
Submit Documentation Feedback
15
LMV341, LMV342, LMV344
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
www.ti.com
TYPICAL CHARACTERISTICS (continued)
6
LARGE-SIGNAL NONINVERTING RESPONSE
2
TA = 125°C
RL = 2 kΩ
V+/GND = ±2.5 V
1
0
4
0
−0.05
−0.1
0.05
−0.15
0
−0.05
VO − Output Voltage − V
0.1
5
VI − Input Voltage − V
VO − Output Voltage − V
0.15
0.05
−1
3
2
TA = 125°C
RL = 2 kΩ
V+/GND = ±2.5 V
−2
1
−3
0
−4
−0.2
−5
−1
Output
−0.1
Output
−0.25
4 µs/div"
−2
4 µs/div"
Figure 31.
Figure 30.
SMALL-SIGNAL INVERTING RESPONSE
0.1
0.05
TA = −40°C
RL = 2 kΩ
V+/GND = ±2.5 V
−0.05
−0.1
−0.15
0
−0.2
−0.05
VO − Output Voltage − V
VO − Output Voltage − V
0
VI − Input Voltage − V
0.05
0.15
2
Input
Input
0.2
5
1
4
0
3
2
−1
TA = −40°C
RL = 2 kΩ
V+/GND = ±2.5 V
16
4 µs/div"
Figure 32.
Submit Documentation Feedback
−2
1
−3
0
−4
−1
−5
Output
−0.1
−6
LARGE-SIGNAL INVERTING RESPONSE
6
0.1
0.25
VI − Input Voltage − V
Input
Input
0.2
VI − Input Voltage − V
0.25
SMALL-SIGNAL NONINVERTING RESPONSE
0.1
Output
−0.25
−2
4 µs/div"
Figure 33.
−6
Copyright © 2004–2012, Texas Instruments Incorporated
Product Folder Link(s): LMV341 LMV342 LMV344
LMV341, LMV342, LMV344
www.ti.com
SLOS447H – SEPTEMBER 2004 – REVISED JUNE 2012
TYPICAL CHARACTERISTICS (continued)
SMALL-SIGNAL INVERTING RESPONSE
LARGE-SIGNAL INVERTING RESPONSE
6
0.1
0.25
TA = 25°C
RL = 2 kΩ
V+/GND = ±2.5 V
−0.05
−0.1
0.05
−0.15
0
−0.2
−0.05
VO − Output Voltage − V
5
1
4
0
3
2
−1
TA = 25°C
RL = 2 kΩ
V+/GND = ±2.5 V
1
−3
0
−4
−1
−5
Output
−0.1
Output
−2
−0.25
4 µs/div"
Figure 34.
SMALL-SIGNAL INVERTING RESPONSE
0.25
LARGE-SIGNAL INVERTING RESPONSE
2
6
0.05
5
1
4
0
−0.05
−0.1
0.05
−0.15
0
−0.2
−0.05
VO − Output Voltage − V
TA = 125°C
RL = 2 kΩ
V+/GND = ±2.5 V
VI − Input Voltage − V
0
0.15
−1
3
2
TA = 125°C
RL = 2 kΩ
V+/GND = ±2.5 V
−2
1
−3
0
−4
−5
−1
Output
Output
−0.1
−6
Input
0.2
VO − Output Voltage − V
4 µs/div"
Figure 35.
0.1
Input
0.1
−2
VI − Input Voltage − V
VO − Output Voltage − V
0
0.15
VI − Input Voltage − V
0.05
VI − Input Voltage − V
Input
Input
0.2
0.1
2
−0.25
−6
−2
4 µs/div"
Figure 36.
4 µs/div"
Figure 37.
Copyright © 2004–2012, Texas Instruments Incorporated
Product Folder Link(s): LMV341 LMV342 LMV344
Submit Documentation Feedback
17
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LMV341IDBVR
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC9A ~ RC9E)
LMV341IDBVRE4
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC9A ~ RC9E)
LMV341IDBVRG4
ACTIVE
SOT-23
DBV
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(RC9A ~ RC9E)
LMV341IDCKR
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(R4A ~ R4E)
LMV341IDCKRE4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(R4A ~ R4E)
LMV341IDCKRG4
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
(R4A ~ R4E)
LMV342ID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV342I
LMV342IDDUR
PREVIEW
VSSOP
DDU
8
3000
TBD
Call TI
Call TI
-40 to 125
LMV342IDE4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV342I
LMV342IDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV342I
LMV342IDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
RPA
LMV342IDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
RPA
LMV342IDGKT
PREVIEW
VSSOP
DGK
8
250
TBD
Call TI
Call TI
-40 to 125
LMV342IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV342I
LMV342IDRE4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV342I
LMV342IDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV342I
LMV344ID
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV344I
LMV344IDE4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV344I
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LMV344IDG4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV344I
LMV344IDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV344I
LMV344IDRE4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV344I
LMV344IDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
LMV344I
LMV344IPW
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV344I
LMV344IPWE4
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV344I
LMV344IPWG4
ACTIVE
TSSOP
PW
14
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV344I
LMV344IPWR
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV344I
LMV344IPWRE4
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV344I
LMV344IPWRG4
ACTIVE
TSSOP
PW
14
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
MV344I
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(3)
11-Apr-2013
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF LMV341, LMV344 :
• Automotive: LMV341-Q1, LMV344-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Jan-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LMV341IDBVR
Package Package Pins
Type Drawing
SPQ
SOT-23
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
DBV
6
3000
180.0
B0
(mm)
K0
(mm)
P1
(mm)
8.4
3.23
3.17
1.37
4.0
W
Pin1
(mm) Quadrant
8.0
Q3
LMV341IDCKR
SC70
DCK
6
3000
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
LMV342IDGKR
VSSOP
DGK
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
LMV342IDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
LMV344IDR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
LMV344IPWR
TSSOP
PW
14
2000
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Jan-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LMV341IDBVR
SOT-23
DBV
6
3000
202.0
201.0
28.0
LMV341IDCKR
SC70
DCK
6
3000
202.0
201.0
28.0
LMV342IDGKR
VSSOP
DGK
8
2500
358.0
335.0
35.0
LMV342IDR
SOIC
D
8
2500
340.5
338.1
20.6
LMV344IDR
SOIC
D
14
2500
367.0
367.0
38.0
LMV344IPWR
TSSOP
PW
14
2000
367.0
367.0
35.0
Pack Materials-Page 2
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