Fairchild FGP90N30 300v, 90a pdp igbt Datasheet

FGP90N30
300V, 90A PDP IGBT
Features
General Description
•
•
•
•
Employing Unified IGBT Technology, Fairchild's PDP IGBTs
provides low conduction and switching loss. The PWD series
offers the optimum solution for PDP applications where low condution loss is essential.
High Current Capability
Low saturation voltage : VCE(sat) = 1.1 V @ IC = 20A
High input impedance
Fast switching
Application
. PDP System
C
G
TO-220
1
1.Gate
2.Collector
E
3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
IC_pulse (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulse Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
FGP90N30
300
± 20
90
130
192
77
-55 to +150
-55 to +150
Units
V
V
A
A
W
W
°C
°C
300
°C
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
0.65
62.5
Units
°C/W
°C/W
Notes
(1) Repetitive test , pulse width=100usec , Duty=0.5
©2006 Fairchild Semiconductor Corporation
FGP90N30 Rev. A
1
www.fairchildsemi.com
FGP90N30 300V, 90A PDP IGBT
January 2006
Device Marking
Device
Package
Packaging
Type
FGP90N30
FGP90N30TU
TO-220
Rail / Tube
Electrical Characteristics
Symbol
Qty per Tube
50ea
Max Qty
per Box
-
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA
300
--
--
V
VGE = 0V, IC = 250uA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
100
± 250
uA
nA
IC = 250uA, VCE = VGE
IC = 20A, VGE = 15V
IC = 90 A, VGE = 15V
TC = 25°C
IC = 90 A, VGE = 15V
TC = 125°C
2.5
--
4.0
1.1
5.0
1.4
V
V
--
1.9
--
V
--
2.0
--
V
----
1700
290
80
----
pF
pF
pF
------------
30
150
110
140
30
150
110
330
87
12
38
---350
----130
18
57
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
FGP90N30 Rev. A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 200 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25°C
VCC = 200 V, IC = 20 A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125°C
VCE = 200 V, IC =20A,
VGE = 15V
2
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FGP90N30 300V, 90A PDP IGBT
Package Marking and Ordering Information
FGP90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
o
20V
80
Figure 2. Typical Output Characteristics
T C = 25 C
12V
15V
Collector Current, IC [A]
10V
Collector Current, IC [A]
o
20V
80
60
8V
40
20
T C = 125 C
12V
10V
15V
8V
60
40
20
V GE= 6V
V GE = 6V
0
0
1
2
3
4
5
0
6
0
1
C ollector-Em itter Voltage, V C E [V]
Figure 3 Typical Saturation Voltage
Characteristics
3
4
5
6
Figure 4. Transfer Characteristics
V CE = 20 V
Com m on E m itter
V Ge = 15V
80
2
C ollector-E mitter Voltage, V C E [V]
80
Collector Current, IC [A]
Collector Current, IC [A]
o
T c = 25 C
o
T c = 125 C
60
40
20
60
40
o
125 C
o
25 C
20
0
0
1
2
0
3
0
2
Figure 5. Saturation Voltage vs Case
Temperature at Variant Current Level
8
6
1.6
1.4
40A
1.2
20A
1.0
10
12
C om m on E m itter
o
T C = 25 C
[V]
CE
Collector - Emitter Voltage, V
Collector-Emitter Voltage, VCE [V]
6
Figure 6. Saturation Voltage vs. Vge
90A
1.8
Ic= 10A
0.8
5
4
3
90A
2
10A
20A
40A
1
0
0
25
50
75
100
125
150
6
o
Case Temperature, T C ( C)
FGP90N30 Rev. A
4
Gate-Emitter Voltage, V GE [V]
C ollector-E m itter V oltage, V C E [V ]
8
10
12
14
16
18
20
G ate - E m itter V oltage, V G E [V ]
3
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6
Figure 8. Capacitance Characteristics
C om m on Em itter
o
T C = 125 C
Cies
5
Collector - Emitter Voltage, V
CE
[V]
FGP90N30 300V, 90A PDP IGBT
Figure 7. Saturation Voltage vs. Vge
1000
Capacitance [pF]
4
3
90A
2
10A
20A
40A
1
Coes
Cres
Com m on Em itter
V GE = 0V, f = 1MHz
100
o
T C = 25 C
0
6
8
10
12
14
16
18
20
0
5
Figure 9. Gate Charge
15
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
10
Vcc = 200V
5
0
40
50
60
70
80
100µs
1ms
10
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
30
30
50µs
Ic MAX (Continuous)
20
25
Ic MAX (Pulsed)
o
90
0.1
1
Gate Charge, Q g [nC]
10
100
1000
Collector - Emitter Voltage, VCE [V]
Figure 11. Turn-On Characteristics vs.
Gate Resistance
Figure 12. Turn-Off Characteristics vs.
Gate Resistance
1000
1000
Com m on Em itter
V C C = 200V, V GE = 15V
C om m on Em itter
V C C = 200V, V G E = 15V
I C = 20A
I C = 20A
o
o
T C = 25 C
T C = 25 C
o
o
Switching Time [ns]
T C = 125 C
Switching Time [ns]
20
100
T C = 25 C
10
15
Figure 10. SOA Characteristics
Common Emitter
R L = 10 ohm
0
10
Collector-Emitter Voltage, V CE [V]
G ate - Em itter V oltage, V G E [V ]
tr
100
td(on)
T C = 125 C
tf
tf
100
td(off)
10
1
10
1
100
FGP90N30 Rev. A
10
100
Gate R esistance, R G [Ω ]
Gate Resistance, R G [Ω ]
4
www.fairchildsemi.com
FGP90N30 300V, 90A PDP IGBT
Figure 13 Turn-On Characteristics vs.
Collector Current
Figure 14. Turn-Off Characteristics vs.
Collector Current
1000
1000
Common Emitter
V GE = 15V, R G = 10 Ω
o
T C = 25 C
tf
o
Switching Time [ns]
Switching Time [ns]
T C = 125 C
tr
100
td(on)
tf
100
td(off)
Com m on Em itter
V GE = 15V, R G = 10 Ω
o
T C = 25 C
o
10
10
10
100
T C = 125 C
10
Collector Current , Ic [A]
100
Collector Current , Ic [A]
Figure 15. Switching Loss vs.
Gate Resistance
Figure 16. Switching Loss vs.
Collector Current
1000
1000
100
Switching Loss [uJ]
Switching Loss [uJ]
Eoff
Eon
Common Emitter
V CC = 200V, V GE = 15V
IC = 20A
Eoff
100
Eoff
Com m on Em itter
V GE = 15V, R G = 10 Ω
Eon
o
T C = 25 C
o
T C = 25 C
o
T C = 125 C
10
1
10
o
T C = 125 C
10
100
10
Gate Resistance, R G [Ω ]
100
Collector Current , Ic [A]
Figure 17. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
10
1
0 .5
0 .2
0 .1
0 .1
0 .0 5
0 .0 2
0 .0 1
0 .0 1
Pdm
s in g le p u ls e
t1
t2
1 E -3
1 E -5
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
FGP90N30 Rev. A
5
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
(45°
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.40 ±0.20
10.00 ±0.20
FGP90N30 Rev. A
6
www.fairchildsemi.com
FGP90N30 300V, 90A PDP IGBT
Mechanical Dimensions
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Formative or In
Design
This datasheet contains the design specifications for
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First Production
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The datasheet is printed for reference information only.
Rev. I17
7
FGP90N30 Rev. A
www.fairchildsemi.com
FGP90N30 300V, 90A PDP IGBT
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