FGP90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential. High Current Capability Low saturation voltage : VCE(sat) = 1.1 V @ IC = 20A High input impedance Fast switching Application . PDP System C G TO-220 1 1.Gate 2.Collector E 3.Emitter Absolute Maximum Ratings Symbol VCES VGES IC IC_pulse (1) PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulse Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 25°C @ TC = 25°C @ TC = 100°C FGP90N30 300 ± 20 90 130 192 77 -55 to +150 -55 to +150 Units V V A A W W °C °C 300 °C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. 0.65 62.5 Units °C/W °C/W Notes (1) Repetitive test , pulse width=100usec , Duty=0.5 ©2006 Fairchild Semiconductor Corporation FGP90N30 Rev. A 1 www.fairchildsemi.com FGP90N30 300V, 90A PDP IGBT January 2006 Device Marking Device Package Packaging Type FGP90N30 FGP90N30TU TO-220 Rail / Tube Electrical Characteristics Symbol Qty per Tube 50ea Max Qty per Box - TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 250uA 300 -- -- V VGE = 0V, IC = 250uA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 100 ± 250 uA nA IC = 250uA, VCE = VGE IC = 20A, VGE = 15V IC = 90 A, VGE = 15V TC = 25°C IC = 90 A, VGE = 15V TC = 125°C 2.5 -- 4.0 1.1 5.0 1.4 V V -- 1.9 -- V -- 2.0 -- V ---- 1700 290 80 ---- pF pF pF ------------ 30 150 110 140 30 150 110 330 87 12 38 ---350 ----130 18 57 ns ns ns ns ns ns ns ns nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc FGP90N30 Rev. A Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200 V, IC = 20A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25°C VCC = 200 V, IC = 20 A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 125°C VCE = 200 V, IC =20A, VGE = 15V 2 www.fairchildsemi.com FGP90N30 300V, 90A PDP IGBT Package Marking and Ordering Information FGP90N30 300V, 90A PDP IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics o 20V 80 Figure 2. Typical Output Characteristics T C = 25 C 12V 15V Collector Current, IC [A] 10V Collector Current, IC [A] o 20V 80 60 8V 40 20 T C = 125 C 12V 10V 15V 8V 60 40 20 V GE= 6V V GE = 6V 0 0 1 2 3 4 5 0 6 0 1 C ollector-Em itter Voltage, V C E [V] Figure 3 Typical Saturation Voltage Characteristics 3 4 5 6 Figure 4. Transfer Characteristics V CE = 20 V Com m on E m itter V Ge = 15V 80 2 C ollector-E mitter Voltage, V C E [V] 80 Collector Current, IC [A] Collector Current, IC [A] o T c = 25 C o T c = 125 C 60 40 20 60 40 o 125 C o 25 C 20 0 0 1 2 0 3 0 2 Figure 5. Saturation Voltage vs Case Temperature at Variant Current Level 8 6 1.6 1.4 40A 1.2 20A 1.0 10 12 C om m on E m itter o T C = 25 C [V] CE Collector - Emitter Voltage, V Collector-Emitter Voltage, VCE [V] 6 Figure 6. Saturation Voltage vs. Vge 90A 1.8 Ic= 10A 0.8 5 4 3 90A 2 10A 20A 40A 1 0 0 25 50 75 100 125 150 6 o Case Temperature, T C ( C) FGP90N30 Rev. A 4 Gate-Emitter Voltage, V GE [V] C ollector-E m itter V oltage, V C E [V ] 8 10 12 14 16 18 20 G ate - E m itter V oltage, V G E [V ] 3 www.fairchildsemi.com 6 Figure 8. Capacitance Characteristics C om m on Em itter o T C = 125 C Cies 5 Collector - Emitter Voltage, V CE [V] FGP90N30 300V, 90A PDP IGBT Figure 7. Saturation Voltage vs. Vge 1000 Capacitance [pF] 4 3 90A 2 10A 20A 40A 1 Coes Cres Com m on Em itter V GE = 0V, f = 1MHz 100 o T C = 25 C 0 6 8 10 12 14 16 18 20 0 5 Figure 9. Gate Charge 15 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] 10 Vcc = 200V 5 0 40 50 60 70 80 100µs 1ms 10 DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 30 30 50µs Ic MAX (Continuous) 20 25 Ic MAX (Pulsed) o 90 0.1 1 Gate Charge, Q g [nC] 10 100 1000 Collector - Emitter Voltage, VCE [V] Figure 11. Turn-On Characteristics vs. Gate Resistance Figure 12. Turn-Off Characteristics vs. Gate Resistance 1000 1000 Com m on Em itter V C C = 200V, V GE = 15V C om m on Em itter V C C = 200V, V G E = 15V I C = 20A I C = 20A o o T C = 25 C T C = 25 C o o Switching Time [ns] T C = 125 C Switching Time [ns] 20 100 T C = 25 C 10 15 Figure 10. SOA Characteristics Common Emitter R L = 10 ohm 0 10 Collector-Emitter Voltage, V CE [V] G ate - Em itter V oltage, V G E [V ] tr 100 td(on) T C = 125 C tf tf 100 td(off) 10 1 10 1 100 FGP90N30 Rev. A 10 100 Gate R esistance, R G [Ω ] Gate Resistance, R G [Ω ] 4 www.fairchildsemi.com FGP90N30 300V, 90A PDP IGBT Figure 13 Turn-On Characteristics vs. Collector Current Figure 14. Turn-Off Characteristics vs. Collector Current 1000 1000 Common Emitter V GE = 15V, R G = 10 Ω o T C = 25 C tf o Switching Time [ns] Switching Time [ns] T C = 125 C tr 100 td(on) tf 100 td(off) Com m on Em itter V GE = 15V, R G = 10 Ω o T C = 25 C o 10 10 10 100 T C = 125 C 10 Collector Current , Ic [A] 100 Collector Current , Ic [A] Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current 1000 1000 100 Switching Loss [uJ] Switching Loss [uJ] Eoff Eon Common Emitter V CC = 200V, V GE = 15V IC = 20A Eoff 100 Eoff Com m on Em itter V GE = 15V, R G = 10 Ω Eon o T C = 25 C o T C = 25 C o T C = 125 C 10 1 10 o T C = 125 C 10 100 10 Gate Resistance, R G [Ω ] 100 Collector Current , Ic [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 0 .0 1 Pdm s in g le p u ls e t1 t2 1 E -3 1 E -5 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c ta n g u la r P u ls e D u ra tio n [s e c ] FGP90N30 Rev. A 5 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.40 ±0.20 10.00 ±0.20 FGP90N30 Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 7 FGP90N30 Rev. A www.fairchildsemi.com FGP90N30 300V, 90A PDP IGBT TRADEMARKS