AOD476 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD476 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <21 mΩ (VGS = 10V) RDS(ON) <28 mΩ (VGS = 4.5V) RDS(ON) <79 mΩ (VGS = 2.5V) 193 100% UIS Tested! 18 100% Rg Tested! -RoHS Compliant -Halogen Free* TO-252 D-PAK Top View D D Bottom View G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C G TC=100°C Avalanche Current C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C V ID 20 75 IAR 13 A 25 mJ EAR 2.5 W 1.6 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 16.7 TJ, TSTG t ≤ 10s Steady-State Steady-State A 33.3 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case B ±16 IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 25 Pulsed Drain Current C Repetitive avalanche energy L=0.3mH TC=25°C Maximum 20 RθJA RθJC Typ 17 40 3.6 °C Max 25 50 4.5 Units °C/W °C/W °C/W www.aosmd.com AOD476 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250uA, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS=±16V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.6 ID(ON) On state drain current VGS=10V, VDS=5V 75 VGS=10V, ID=20A TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current G Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Gate Source Charge nA 2 V 14 21 A 21 28 VGS=2.5V, ID=4A 57 79 VDS=5V, ID=20A 19 IS=1A, VGS=0V 0.77 VGS=10V, VDS=10V, ID=20A mΩ S 1 V 30 A 900 pF 162 pF 105 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs 100 20 VGS=0V, VDS=10V, f=1MHz uA 1.26 VGS=4.5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C RDS(ON) Max 20 VDS=16V, VGS=0V IGSS Coss Typ pF 0.9 1.35 Ω 15 18 nC 7.2 9 nC 1.8 nC Qgd Gate Drain Charge 2.8 nC tD(on) Turn-On DelayTime 4.5 ns tr Turn-On Rise Time 9.2 ns tD(off) Turn-Off DelayTime 18.7 ns tf trr Turn-Off Fall Time 3.3 ns Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 9.5 ns nC VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with 0 T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev2: Oct. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD476 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V 8V 80 6V 25°C VDS=5V 25 125°C -40°C 20 60 40 ID(A) ID (A) 4.5V 3.5V 15 1.4 10 20 494 692 5 593 830 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 1 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics 193 18 1.60 80 5 VGS=10V, 20A 70 Normalized On-Resistance VGS=2.5V 1.40 RDS(ON) (mΩ ) 60 50 VGS=4.5V, 10A 1.20 40 VGS=4.5V 30 1.00 20 10 VGS=2.5V, 4A 0.80 VGS=10V 0 0 5 10 15 20 25 30 0.60 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 59 75 142 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 35 100 ID=20A 10 30 IS (A) RDS(ON) (mΩ ) 1 125°C 25 125°C 0.1 -40°C 0.01 20 25°C 25°C 0.001 15 0.0001 10 0.00001 3 4 5 6 7 8 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD476 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 1200 VDS=12.5V ID=20A Ciss Capacitance (pF) VGS (Volts) 8 6 4 1000 800 1.4 600 Coss 400 494 692 2 200 0 Crss 0 0 3 6 9 12 15 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 200 100µs Power (W) ID (Amps) 160 1ms 10 20 193 18 10µs DC 593 830 RDS(ON) limited TJ(Max)=175°C TC=25°C 120 80 1 40 TJ(Max)=175°C, TC=25°C 0 0.1 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 59 0.1 1 10 Pulse 142 Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD476 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS tA = 30 40 L ⋅ ID 35 BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 35 25 TA=25°C 20 15 30 25 20 1.4 15 494 692 10 5 10 0.000001 0 0.00001 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 193 18 30 50 25 40 20 Power (W) Current rating ID(A) 593 830 15 TA=25°C 30 20 10 10 5 0 0.01 0 0 25 50 75 100 125 150 175 0.1 1 59 10 142 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD476 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com