ZSELEC FR105 1.0a fast recovery diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
FR101 – FR107
1.0A FAST RECOVERY DIODE
Features
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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C
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
D
DO-41
Max
Dim
Min
24.5
—
A
4.06
5.21
B
0.60
0.80
C
2.00
3.00
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 75°C
Symbol
FR101
FR102
FR103
FR104
FR105
FR106
FR107
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
700
V
IO
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
1.3
V
@TA = 25°C
@TA = 100°C
IRM
5.0
100
µA
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
trr
Typical Junction Capacitance (Note 3)
Cj
15
pF
Operating Temperature Range
Tj
-65 to +150
°C
TSTG
-65 to +150
°C
Storage Temperature Range
150
250
500
nS
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
FR101 – FR107
1 of 2
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Z ibo Seno Electronic Engineering Co., Ltd.
FR101 – FR107
1.0
10
IF, INSTANTANEOUS FWD CURRENT (A)
I(AV), AVERAGE FWD RECTIFIED CURRENT (A)
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
1.0
0.1
Tj = 25°C
Pulse width = 300 µs
0.01
25
75
50
100
125
150
175
200
1.0
1.2
1.4
0.6
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
30
100
Tj = 25°C
f = 1MHz
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
20
10
10
1
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
100
1
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
FR101 – FR107
2 of 2
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