ECH8649 Ordering number : ENA0854A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8649 General-Purpose Switching Device Applications Features • • • Low ON-resistance Best suited for LiB charging and discharging switch Halogen free compliance • • • 2.5V drive Common-drain type Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 20 V ±10 V 7.5 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Power Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8649-TL-H Top View Packing Type : TL 0.25 2.9 8 0.15 Marking WT 5 2.3 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.9 0.25 LOT No. TL 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 71112 TKIM/53007PE TIIM TC-00000718 No. A0854-1/7 ECH8649 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=4A 4.2 RDS(on)1 ID=4A, VGS=4.5V 9 13 17 mΩ RDS(on)2 ID=4A, VGS=4.0V 9.4 13.5 18 mΩ RDS(on)3 ID=4A, VGS=3.1V 11 16 22 mΩ RDS(on)4 ID=2A, VGS=2.5V 12.5 18 26 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 20 V 1 μA ±10 μA 1.3 7 V S 1060 pF 180 pF Crss 135 pF Turn-ON Delay Time td(on) 17.5 ns Rise Time tr td(off) 120 ns 68 ns Turn-OFF Delay Time Fall Time VDS=10V, f=1MHz See specified Test Circuit. tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=4.5V, ID=7.5A IS=7.5A, VGS=0V 80 ns 10.8 nC 2.1 nC 2.9 nC 0.74 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=4A RL=2.5Ω VIN D VOUT PW=10μs D.C.≤1% G ECH8649 P.G 50Ω S Ordering Information Device ECH8649-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A0854-2/7 ECH8649 ID -- VDS 3.0 2.5 VGS=1.5V 2.0 1.5 0 0 0.1 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V 30 ID=2A 25 4A 20 15 10 5 0 2 4 6 8 2.0 2.5 IT12484 35 =4A V, I D 30 =3.1 VGS 25 =2A V, I D 20 =2.5 VGS 15 I =4A 4.5V, D V GS= 10 =4A V, I D =4.0 VGS 5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C IT12485 | yfs | -- ID 10 1.5 RDS(on) -- Ta 0 --60 10 Gate-to-Source Voltage, VGS -- V 1.0 40 Ta=25°C 35 0 0.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 5 160 IT12486 IS -- VSD 10 7 5 VDS=10V 140 VGS=0V 3 = Ta 2 1.0 Source Current, IS -- A C 5° 3 --2 75 °C °C 25 7 5 3 2 1.0 7 5 3 Ta=7 5°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 IT12483 RDS(on) -- VGS 40 Forward Transfer Admittance, | yfs | -- S 3 1 0.5 0 2 0.1 7 5 3 2 2 0.1 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 5 7 10 IT12487 Drain Current, ID -- A 5 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT12488 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 7 0.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 Ciss Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 4 2 1.0 7 5 --25°C 3.5 6 25°C 4.0 7 Ta=75 °C 8.0V 4.5 Drain Current, ID -- A 5.0 3.0V 5.5 VDS=10V 9 8 6.0V 6.0 2 .0 6.5 Drain Current, ID -- A 2.5V 4.0V 7.0 ID -- VGS 10 V 7.5 3 2 td(off) 100 7 tf 5 tr 1000 7 5 3 Coss Crss 2 3 td(on) 2 100 7 10 0.1 5 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT12489 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT12490 No. A0854-3/7 ECH8649 VGS -- Qg 4.5 VDS=10V ID=7.5A 4.0 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 10 11 IT12491 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 9 10 7 5 3 2 ASO IDP=40A ID=7.5A 10 DC ms 10 op 0m era s tio n( 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs 10 1m 0μs s Ta = 25 °C Operation in this area is limited by RDS(on). ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT12492 Mounted on a ceramic board (900mm2×0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 ss 1u 0.8 Di ni t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12493 No. A0854-4/7 ECH8649 Embossed Taping Specification ECH8649-TL-H No. A0854-5/7 ECH8649 Outline Drawing ECH8649-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A0854-6/7 ECH8649 Note on usage : Since the ECH8649 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No. A0854-7/7