5N65 650V N-Channel Power MOSFET ● ● ● ● ● RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5A Fast switching capability Lead free in compliance with EU RoHS directive. Green molding compound PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 650 ID (A) 5 2.4 @ VGS =10V Case: TO-251,TO-252,TO-220,ITO-220, TO-262,TO-263 Package Pin Definition: 1. Gate 2. Drain 3. Source Ordering Information Part No. Package Packing DMP5N65-TU TO-251 75pcs / Tube DMD5N65-TR TO-252 DMD5N65-TU TO-252 2.5Kpcs / 13” Reel 75pcs / Tube DMT5N65-TU TO-220 50pcs / Tube DMF5N65-TU ITO-220 50pcs / Tube DMK5N65-TU TO-262 50pcs / Tube DMG5N65-TU TO-263 50pcs / Tube DMG5N65-TR TO-263 800pcs / 13" Reel Block Diagram D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 2) Continuous Drain Current Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) SYMBOL VDSS VGSS IAR ID IDM EAS dv/dt TO-220,TO-262,TO-263 Power Dissipation ITO-220 PD TO-251/TO-252 Junction Temperature Operating Temperature Storage Temperature TJ TOPR TSTG RATINGS 650 ±30 5 5 20 210 4.5 UNIT V V A A A mJ V/ns 100 W 36 W 54 W +150 -55 ~ +150 -55 ~ +150 °C °C °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤5A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C Mar.2015-REV.00 www.dyelec.com 1/9 5N65 650V N-Channel Power MOSFET THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/ITO-220 TO-262/TO-263 RATING 62.5 θJA TO-251/ TO-252 110 TO-220/ITO-220 TO-262/TO-263 2.35 ITO-220 UNIT °C/W °C/W 5.5 θJC TO-251/ TO-252 2.9 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS VGS = 0V, ID = 250μA IDSS VDS = 650V, VGS = 0V Forward VGS = 30V, VDS = 0V IGSS Reverse e VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA VGS =10V, ID = 2.5A Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 325V, ID =5A, Turn-On Rise Time tR R G = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 520V,ID= 5.0A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS VGS = 0 V, IS = 5A Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0 V, IS = 5A, dIF/dt = 100 A/ μs (Note 1) Reverse Recovery Charge QRR MIN TYP MAX UNIT V 650 1 μA 100 -100 nA nA V/°С 2.0 4.0 2.4 V Ω 515 55 6.5 670 72 8.5 pF pF pF 10 42 38 46 15 2.5 6.6 30 90 85 100 19 ns ns ns ns nC nC nC 1.4 V 5 A 20 A Gate-Source Leakage Current 0.6 2.0 300 2.2 ns μC Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2.. Essentially independent of operating temperature Mar.2015-REV.00 www.dyelec.com 2/9 5N65 650V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms Mar.2015-REV.00 www.dyelec.com 3/9 5N65 650V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Mar.2015-REV.00 Time Unclamped Inductive Switching Waveforms www.dyelec.com 4/9 5N65 650V N-Channel Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Region Characteristics VGS Top: 5.0V 101 Bottorm:4.5V -1 10 *Notes: 1 1.. 250µs 250 Pu 2. TC=25℃ 4.5V Drain-Source On-Resistance, RDS(ON) (Ω) 10-2 -1 10 Mar.2015-REV.00 0 Drain Current, ID (A) 100 101 25℃ 100 *Notes: 1.. DS=40V 2. 250µs Pulse Test 10-1 2 1 10 10 Drain-Source Voltage, VDS (V) Drain Current, ID (A) Drain Current, ID (A) 5V www.dyelec.com 4 6 8 Gate-Source Voltage, VGS (V) 10 10 0m s 5/9 5N65 650V N-Channel Power MOSFET TO-220 Mechanical Drawing ITO-220 Mechanical Drawing Mar.10,2015-REV.00 www.sddydz.com 6/9 5N65 650V N-Channel Power MOSFET TO-262 Mechanical Drawing TO-263 Mechanical Drawing May,2015-REV.00 www.dyelec.com 7/9 5N65 650V N-Channel Power MOSFET TO-251 Mechanical Drawing TO-252 Mechanical Drawing Mar.2015-REV.00 www.dyelec.com 8/9 5N65 650V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. Mar.2015-REV.00 www.dyelec.com 9/9