BDX20 PNP SILICON TRANSISTORS EPITAXIAL BASE LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector to Base Voltage -60 V VCEO #Collector-Emitter Voltage -140 V VCEX Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -7 V IC Collector Current – Continuous -10 A IB Base Current – Continuous -7 A PTOT Total Device Dissipation 117 Watts TJ Junction Temperature °C TS Storage Temperature 200 -65 to +200 VBE=1.5 V °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS Value Unit 1.5 °C/W 1/2 BDX20 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit ICBO Collector-Emitter Sustaining IC=-200 mA, IB=0 -140 Voltage (*) Collector-Emitter IC=-100 mA, VBE=1.5 V -160 Breakdown Voltage (*) VCE=-140 V, VBE=1.5 V Collector Cutoff Current VCE=-140 V, VBE=1.5 V, TCASE=150°C Collector-Base Cutoff VCB=-140 V, IE=0 Current IEBO Emitter-Base Cutoff Current VBE=-7.0 V, IC=0 VCEO(SUS) VCEX ICEX VCE(SAT) Static Forward Current Transfer Ratio (*) Collector-Emitter Saturation Voltage (*) VBE Base-Emitter Voltage (*) fT Transition Frequency h21E - - V - - V - -1.0 -10 mA - -1.0 mA - - -5.0 mA IC=-3.0 A, VCE=-4.0 V IC=10 A, VCE=-4.0 V IC=-3.0 A, IB=-0.3 A IC=-10 A, IB=-2 A IC=-3.0 Adc, VCE=-4.0 V IC=-10 A, VCE=-4.0 V 20 - 10 -1.7 -5.7 70 -1.0 -5.0 - VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz 4 - - In accordance with JEDEC Registration Data (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 2/2 V V MHz