MITSUBISHI GATE TURN-OFF THYRISTORS FG3000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FG3000GX-90DA Dimensions in mm GATE (WHITE) 494 ± 8 ● ITQRM Repetitive controllable on-state current ...........3000A ● IT(AV) Average on-state current .....................1000A ● VDRM Repetitive peak off state voltage ...................4500V ● Anode short type 0.4 MIN 0.4 MIN 26 ± 0.5 AUXILIARY CATHODE CONNECTOR (RED) φ 75 ± 0.2 φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPENAME φ 75 ± 0.2 φ 108 MAX ANODE φ 3.5 DEPTH 2.2 ± 0.2 APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) VLTDS Voltage class 90DA 17 17 17 4500 4500 3600 3000 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage* Non-repetitive peak off-state voltage* DC off-state voltage* Long term DC stability voltage* Unit V V V V V V V : VGK = –2V * Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 4500V, Tj = 125°C, CS = 3.0µF, LS = 0.25µH f = 60Hz, sine wave θ = 180°, Tf = 73°C One half cycle at 60Hz One cycle at 60Hz VD = 3400V, IGM = 25A, Tj = 125°C Recommended value 33 Standard value Ratings 3000 1570 1000 20 1.6 × 106 500 10 17 130 900 520 33 130 300 –40 ~ +125 –40 ~ +150 30 ~ 40 1220 Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000GX-90DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions VTM IRRM IDRM IRG dv/dt tgt On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Tj = 125°C, ITM = 3000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 2250V, VGK = –2V Tj = 125°C, ITM = 3000A, IGM = 25A, VD = 3400V tgq Turn-off time IGQM VGT IGT Rth(j-f) Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Tj = 125°C, ITM = 3000A, VDM = 4500V, diGQ/dt = –40A/µs VRG = 17V, CS = 3.0µF, LS = 0.25µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — Limits Typ — — — — — — — — — — — — 720 — — — Max 4.0 10 100 10 — 8 30 — 1.5 2500 0.013 Unit V mA mA mA V/µs µs µs A V mA °C/W MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 4 3 2 103 7 5 4 3 2 102 0 1.0 2.0 3.0 4.0 5.0 RATED SURGE ON-STATE CURRENT 25 SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) PERFORMANCE CURVES 20 15 10 5 0 100 6.0 ON-STATE VOLTAGE (V) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.025 GATE CHARACTERISTICS 7 5 3 2 VFGM = 10V PFGM = 520W 101 7 5 3 2 VGT = 1.5V PFG(AV) = 130W 100 7 5 Tj = 25°C 3 IGT = 2.5A 2 IFGM = 130A 10–1 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 102 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 103 7 5 3 2 2 3 4 5 7 101 0.020 0.015 0.010 0.005 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000GX-90DA MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 4000 140 3500 130 180° 120° θ 3000 360° RESISTIVE, 2500 INDUCTIVE LOAD θ = 30° 2000 90° 60° 1500 1000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 500 0 100 90 80 70 60 θ = 30° 50 0 200 400 600 800 40 1000 0 200 60° 400 90° 120° 600 180° 1000 800 AVERAGE ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 5000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 130 DC 120 270° 4000 FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) 360° RESISTIVE, INDUCTIVE LOAD 110 AVERAGE ON-STATE CURRENT (A) 180° 120° 90° 3000 60° θ = 30° 2000 θ 360° RESISTIVE, INDUCTIVE LOAD 1000 0 0 90 80 70 50 VD = 24V RL = 0.1Ω DC METHOD 7 6 5 IGT 4 3 VGT 2 1 0 –40 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 θ = 30° 0 60° 120° 270° 90° 180° DC 200 400 600 800 1000 1200 1400 1600 AVERAGE ON-STATE CURRENT (A) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE (MAXIMUM) 10 8 360° RESISTIVE, INDUCTIVE LOAD 100 60 200 400 600 800 1000 1200 1400 1600 9 θ 110 AVERAGE ON-STATE CURRENT (A) GATE TRIGGER CURRENT (A), GATE TRIGGER VOLTAGE (V) θ 120 TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10 IT = 3000A VD = 3400V diT/dt = 500A /µs diG/dt = 20A /µs Tj = 125°C 8 6 tgt 4 2 0 td 0 10 20 30 40 50 60 TURN ON GATE CURRENT (A) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG3000GX-90DA TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 50 VD = 3400V VDM = 4500V diGQ/dt = –40A/µs 40 VRG = 17V CS = 3.0µF LS = 0.25µH 30 Tj = 125°C tgq 20 ts 10 0 0 500 1000 1500 2000 2500 3000 3500 TURN OFF CURRENT (A) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq CTURN OFF STORAGE TIME ts (µs) HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 40 tgq 30 VDM = 4500V IT = 3000A 10 VRG = 17V CS = 3.0µF LS = 0.25µH Tj = 125°C 0 10 700 600 500 400 VD = 3400V VDM = 4500V diGQ/dt = –40A/µs VRG = 17V CS = 3.0µF LS = 0.25µH Tj = 125°C 300 200 100 0 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) 40 50 60 1200 800 700 600 VD = 3400V VDM = 4500V IT = 3000A VRG = 17V CS = 3.0µF LS = 0.25µH Tj = 125°C 500 400 300 20 30 40 50 60 TURN ON SWITCHING ENERGY (MAXIMUM) TURN OFF SWITCHING ENERGY (MAXIMUM) diT/dt = 500A /µs 2 100A/µs 1 500 1000 1500 2000 2500 3000 3500 4000 TURN ON CURRENT (A) SWITCHING ENERGY Eoff (J/P) 12 300A/µs 0 900 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) 4 3 1000 TURN OFF CURRENT (A) VD = 2800V 7 IGM = 25A diG/dt = 20A/µs CS = 3.0µF 6 RS = 5Ω Tj = 125°C 5 1100 200 10 500 1000 1500 2000 2500 3000 3500 8 SWITCHING ENERGY Eon (J/P) 30 TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 800 0 20 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 0 ts 20 VD = 3400V 11 10 9 8 7 6 VD = 2800V VDM = 4500V diGQ/dt = –40A/µs VRG = 17V CS = 3.0µF LS = 0.25µH Tj = 125°C 5 4 3 2 0 500 1000 1500 2000 2500 3000 3500 4000 TURN OFF CURRENT (A) Aug.1998