ONSEMI MJ2501

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SEMICONDUCTOR TECHNICAL DATA
! "
Motorola Preferred Devices
. . . for use as output devices in complementary general purpose amplifier applications.
10 AMPERE
DARLINGTON
POWER TRANSISTOR
COMPLEMENTARY
SILICON
80 VOLTS
150 WATTS
• High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
• Monolithic Construction with Built–in Base–Emitter Shunt Resistors
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MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
80
Vdc
Collector–Base Voltage
VCB
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
IC
10
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25_C
PD
150
0.857
Watts
W/_C
TJ, Tstg
– 55 to + 200
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.17
_C/W
Collector–Emitter Voltage
Collector Current
Operating and Storage Junction
Temperature Range
CASE 1–07
TO–204AA
(TO–3)
THERMAL CHARACTERISTICS
PNP
MJ2501
COLLECTOR
BASE
NPN
MJ3001
COLLECTOR
BASE
[ 2.0 k [ 50
[ 2.0 k [ 50
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
80
—
—
—
1.0
5.0
—
2.0
—
1.0
hFE
1000
—
—
VCE(sat)
—
—
2.0
4.0
Vdc
VBE(on)
—
3.0
Vdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 100 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Leakage Current
(VEB = 80 Vdc, RBE = 1.0 k ohm)
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C)
ICER
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
Collector Emitter Leakage Current
(VCE = 40 Vdc, IB = 0)
ICEO
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
(1)Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
hFE, SMALL–SIGNAL CURRENT GAIN
50,000
hFE, DC CURRENT GAIN
20,000
10,000
TJ = 150°C
5000
25°C
2000
1000
500
– 55°C
200
VCE = 3.0 Vdc
100
50
0.01 0.02
0.05 0.1 0.2
0.5
1.0 2.0
IC, COLLECTOR CURRENT (AMP)
5.0
3000
2000
1000
500
300
200
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
100
50
30
103
10
104
105
f, FREQUENCY (Hz)
Figure 2. DC Current Gain
Figure 3. Small–Signal Current Gain
3.5
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
3.0
2.5
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.5
0
0.01 0.02
0.05
0.1
0.2
0.5
1.0
10
7.0
5.0
3.0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
2.0
1.0
0.7
0.5
0.3
0.2
TJ = 200°C
2.0
5.0
10
0.1
1.0
2.0
3.0
5.0 7.0
10
20
30
50
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. “On” Voltages
Figure 5. DC Safe Operating Area
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
2
106
70 100
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limitations imposed by secondary breakdown.
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
3
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Motorola Bipolar Power Transistor Device Data
MJ2501/D