WINNERJOIN A42 Npn silicon epitaxial planar transistor Datasheet

A92
NPN Silicon Epitaxial Planar Transistor
FEATURES
z
Collector-Emitter voltage:VCEO=300V.
z
Collector current up to 500mA.
z
Complement to A92.
z
Small flat package.
z
Power dissipation:Pd(max)=500mW.
Pb
Lead-free
APPLICATIONS
z
High voltage transistor.
SOT-89
ORDERING INFORMATION
Type No.
Marking
Package Code
A42
A42
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
UNIT
VCBO
collector-base voltage
310
V
VCEO
collector-emitter voltage
305
V
VEBO
emitter-base voltage
5
V
IC
collector current (DC)
0.5
A
PC
Collector dissipation
0.5
W
Tj ,Tstg
junction and storage temperature
-55-150
°C
WEJ ELECTRONIC CO./7'
Http:// www.wej.cn
E-mail:[email protected]
A42
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Test
V(BR)CBO
Collector-base breakdown voltage
V(BR)CEO
conditions
MIN.
MAX.
IC=100μA,IE=0
310
-
V
Collector-emitter breakdown voltage
IC=1.0mA,IB=0
305
-
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100μA,IC=0
5
-
V
ICBO
collector cut-off current
IE = 0,VCB = 200V
-
0.25
μA
IEBO
emitter cut-off current
IC = 0,VEB = 5V
-
0.1
μA
hFE
DC current gain
VCE =10V; IC=1mA
VCE =10V;IC =10mA
VCE =10V;IC =30mA
60
100
75
300
-
VCE(sat)
Collector-emitter saturation voltage
IC =20mA; IB =2mA
-
0.2
V
VBE(sat)
Base-emitter saturation voltage
IC =20mA; IB=2mA
-
0.9
V
fT
Transition frequency
VCE=20V,IC=10mA,f=30MHz
50
UNIT
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
WEJ ELECTRONIC CO./7'
Http:// www.wej.cn
E-mail:[email protected]
A42
WEJ ELECTRONIC CO./7'
Http:// www.wej.cn
E-mail:[email protected]
A42
PACKAGE OUTLINE
Plastic surface mounted package
SOT-89
SOT-89
Dim
Min
Max
A
4.5
4.7
B
2.3
2.7
C
1.5Typical
D
0.35
0.55
E
1.4
1.6
F
0.4
0.6
H
1.55
1.75
J
K
0.4Typical
4.15
4.25
All Dimensions in mm
SOLDERING FOOTPRINT
Unit:mm
PACKAGE
INFORMATION
Device
Package
Shipping
A42
SOT-89
1000/Tape&Reel
WEJ ELECTRONIC CO./7'
Http:// www.wej.cn
E-mail:[email protected]
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