Datasheet Serial EEPROM Series Industrial EEPROM 125℃ Operation Microwire BUS EEPROM (3-wire) BR93H76RF-2LB General Description Package W(Typ.) x D(Typ.) x H(Max.) This is the product guarantees long time support in Industrial market. BR93H76RF-2LB is a serial EEPROM of serial 3-line interface method. Features Long Time Support a Product for Industrial Applications. Conforming to Microwire BUS Withstands Electrostatic Voltage up to 6kV (HBM method typ） Wide Temperature Range -40℃ to +125℃ Same package line-up and same pin configuration 2.5V to 5.5V Single Supply Voltage Operation Address Auto Increment Function at READ Operation Prevention of write mistake ¾ Write prohibition at power on ¾ Write prohibition by command code ¾ Write mistake prevention circuit at low voltage Self-timed programming cycle Program Condition Display by READY / BUSY Low Supply Current ¾ Write Operation (5V) : 0.8mA (Typ) ¾ Read Operation (5V) : 0.5mA (Typ) ¾ Standby Operation (5V) : 0.1μA (Typ) Compact package High-Reliability using ROHM Original Double-Cell structure More than 100 years data retention More than 1 million write cycles Data set to FFFFh on all addresses at shipment SOP8 5.00mm x 6.20mm x 1.71mm Application Industrial Equipment BR93H76RF-2LB Capacity Bit Format Product Name Supply Voltage Package 8Kbit 512×16 BR93H76RF-2LB 2.5V to 5.5V SOP8 〇Product structure : Silicon monolithic integrated circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 〇This product has no designed protection against radioactive rays 1/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Limit Unit Supply Voltage VCC -0.3 to +6.5 V Permissible Dissipation Pd 0.56 W Storage Temperature Range Tstg -65 to +150 ℃ Operating Temperature Range Topr -40 to +125 ℃ ‐ -0.3 to VCC+0.3 V Input Voltage/Output Voltage Remarks When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. Memory Cell Characteristics (VCC=2.5V to 5.5V) Limit Parameter Write Cycles (1) Data Retention (1) Unit Conditions - Cycles Ta≦85℃ - - Cycles Ta≦105℃ 300,000 - - Cycles Ta≦125℃ 100 - - Years Ta≦25℃ 60 - - Years Ta≦105℃ 50 - - Years Ta≦125℃ Min Typ Max 1,000,000 - 500,000 (1) Not 100% TESTED Recommended Operating Conditions Parameter Symbol Limit Supply Voltage VCC 2.5 to 5.5 Input Voltage VIN 0 to VCC Unit V www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB DC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V) Limit Parameter Symbol Unit Min Typ Max Conditions Input Low Voltage VIL -0.3 - 0.3xVCC V Input High Voltage VIH 0.7xVCC - VCC+0.3 V Output Low Voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0V≦VCC≦5.5V Output Low Voltage 2 VOL2 0 - 0.2 V IOL=100μA Output High Voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0V≦VCC≦5.5V Output High Voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100μA Input Leak Current ILI -10 - 10 μA VIN=0V to VCC Output Leak Current ILO -10 - 10 μA VOUT=0V to VCC, CS=0V ICC1 - - 3.0 mA fSK=2MHz, tE/W=4ms (WRITE) ICC2 - - 1.5 mA fSK=2MHz (READ) ICC3 - - 3.0 mA fSK=2MHz, tE/W=4ms (WRAL) ISB - - 10 μA CS=0V, DO=OPEN Supply Current Standby Current AC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V) Parameter Symbol Min Typ Max Unit SK Frequency fSK - - 2 MHz SK “H” Time tSKH 200 - - ns SK “L” Time tSKL 200 - - ns CS “L” Time tCS 200 - - ns CS Setup Time tCSS 50 - - ns DI Setup Time tDIS 50 - - ns CS Hold Time tCSH 0 - - ns DI Hold Time tDIH 50 - - ns Data “1” Output Delay Time tPD1 - - 200 ns Data “0” Output Delay Time tPD0 - - 200 ns Time from CS to Output establishment tSV - - 150 ns Time from CS to High-Z tDF - - 150 ns Write Cycle Time tE/W - - 4 ms www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Serial Input / Output Timing CS tCSS tSKH tSKL tCSH SK tDIS tDIH DI tPD1 tPD0 DO(READ) tDF DO(WRITE) STATUS VALID Figure 1. Serial Input / Output Timing Diagram ○Data is taken from DI, in sync with the rise of SK. ○At READ command, data is outputted from DO in sync with the rise of SK. ○After WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H” after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to “L”, DO sets to High-Z state. ○To execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset Block Diagram CS Power source voltage detection Command decode Control SK DI Clock generation Command register Write prohibition Address buffer 9bit High voltage occurrence Address decoder 9bit 8,192 bit EEPROM Data register DO 16bit R/W amplifier 16bit Dummy bit Figure 2. Block Diagram www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Pin Configuration TOP VIEW VCC NC NC 8 7 6 GND 5 BR93H76RF-2LB 1 2 3 CS SK DI 4 DO Figure 3. Pin Configuration Pin Descriptions Pin Number Pin Name I/O 1 CS Input Chip select input 2 SK Input Serial clock input 3 DI Input Start bit, ope code, address, and serial data input 4 DO Output Serial data output, READY / BUSY status output 5 GND - Ground, 0V 6,7 NC - Non connected terminal, VCC, GND or OPEN 8 VCC - Power supply, 2.5V to 5.5V www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Function 5/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Typical Performance Curves 4.5 4.5 4.0 4.0 Ta= -40℃ Ta= 25℃ Ta= 125℃ 3.5 Ta= -40℃ Ta= 25℃ Ta= 125℃ 3.5 INPUT LOW VOLTAGE : VIL［V］ INPUT HIGH VOLTAGE :VIH［V］ SPEC 3.0 2.5 2.0 1.5 3.0 2.5 2.0 1.5 SPEC 1.0 1.0 0.5 0.5 0.0 0.0 2 3 4 5 6 2 3 SUPPLY VOLTAGE : VCC［V］ Figure 4. Input High Voltage, (CS, SK, DI) vs Supply Voltage 5 6 Figure 5. Input Low Voltage, (CS, SK, DI) vs. Supply Voltage 1.0 1.0 Ta= -40℃ Ta= 25℃ 0.8 Ta= -40℃ Ta= 25℃ 0.8 Ta= 125℃ OUTPUT LOW VOLTAGE : VOL［V］ OUTPUT LOW VOLTAGE : VOL［V］ 4 SUPPLY VOLTAGE : VCC［V］ 0.6 0.4 Ta= 125℃ 0.6 SPEC 0.4 SPEC 0.2 0.2 0.0 0.0 0 1 2 3 4 5 0 OUTPUT LOW CURRENT : IOL［mA］ 2 3 4 OUTPUT LOW CURRENT : IOL［mA］ Figure 6. Output Low Voltage vs. Output Low Current (VCC=2.5V) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 Figure 7. Output Low Voltage vs. Output Low Current (VCC=4.0V) 6/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 5 Datasheet BR93H76RF-2LB Typical Performance Curves‐Continued 5.0 5.0 Ta= -40℃ Ta= 25℃ 4.0 Ta= 125℃ OUTPUT HIGH VOLTAGE : VOH［V］ OUTPUT HIGH VOLTAGE : VOH［V］ 4.0 3.0 SPEC 2.0 1.0 Ta= -40℃ Ta= 25℃ 3.0 Ta= 125℃ SPEC 2.0 1.0 0.0 0.0 0 0.4 0.8 1.2 1.6 0 OUTPUT HIGH CURRENT : IOH［mA］ 0.4 0.8 1.6 Figure 9. Output High Voltage vs. Output High Current ( VCC=4.0V) Figure 8. Output High Voltage vs. Output High Current ( VCC=2.5V) 12 12 SPEC SPEC 10 OUTPUT LEAKAGE CURRENT : ILO［μA］ 10 INPUT LEAKAGE CURRENT : ILI［μA］ 1.2 OUTPUT HIGH CURRENT : IOH［mA］ 8 Ta= -40℃ Ta= 25℃ Ta= 125℃ 6 4 Ta= -40℃ 8 Ta= 25℃ Ta= 125℃ 6 4 2 2 0 0 2 3 4 5 2 6 4 5 Figure 11. Output Leak Current, (DO) vs. Supply Voltage Figure 10. Input Leak Current, (CS, SK, DI) vs. Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3 SUPPLY VOLTAGE : VCC ［V］ SUPPLY VOLTAGE : VCC ［V］ 7/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 6 Datasheet BR93H76RF-2LB Typical Performance Curves‐Continued 3.5 1.6 SPEC CURRENT CONSUMPTION AT READ : ICC2(READ) ［mA］ CURRENT CONSUMPTION AT WRITE : ICC1(WRITE) ［mA］ SPEC 3.0 2.5 Ta= -40℃ 2.0 Ta= 25℃ Ta= 125℃ 1.5 1.0 0.5 0.0 1.2 Ta= -40℃ Ta= 25℃ Ta= 125℃ 0.8 0.4 0.0 2 3 4 5 6 2 3 SUPPLY VOLTAGE : VCC ［V］ 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 12. Supply Current at WRITE Operation vs. Supply Voltage (WRITE, fSK=2.0MHz) Figure 13. Supply Current at READ Operation vs. Supply Voltage (READ, fSK=2.0MHz) 3.5 12 10 SPEC 2.5 STANDBY CURRENT : ISB ［μA ］ CURRENT CONSUMPTION AT WRAL : ICC3(WRAL) ［mA］ SPEC 3.0 Ta= -40℃ Ta= 25℃ 2.0 Ta= 125℃ 1.5 1.0 8 Ta= -40℃ Ta= 25℃ Ta= 125℃ 6 4 2 0.5 0.0 0 2 3 4 5 6 2 SUPPLY VOLTAGE : VCC［V］ 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 14. Supply Current at WRAL Operation vs. Supply Voltage (WRAL, fSK=2.0MHz) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3 Figure 15. Standby Current vs. Supply Voltage 8/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Typical Performance Curves‐Continued 28 300 24 250 Ta= -40℃ Ta= 25℃ Ta= 125℃ SPEC SK HIGH TIME : tSKH ［ns］ SK FREQUENCY : fSK ［MHz ］ 20 16 12 200 Ta= -40℃ Ta= 25℃ Ta= 125℃ 150 100 8 50 4 SPEC 0 0 2 3 4 5 6 2 3 SUPPLY VOLTAGE : VCC ［V］ 4 Figure 16. SK Frequency vs. Supply Voltage 300 250 250 SPEC SPEC 200 CS LOW TIME : tCS ［ns ］ SK LOW TIME : tSKL ［ns ］ 6 Figure 17. SK High Time vs. Supply Voltage 300 Ta= -40℃ Ta= 25℃ 150 5 SUPPLY VOLTAGE : VCC［V］ Ta= 125℃ 200 150 100 100 50 50 0 Ta= -40℃ Ta= 25℃ Ta= 125℃ 0 2 3 4 5 6 2 SUPPLY VOLTAGE : VCC［V］ 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 19. CS Low Time vs. Supply Voltage Figure 18. SK Low Time vs. Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3 9/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Typical Performance Curves‐Continued 120 120 100 100 Ta= 125℃ 80 DI SETUP TIME : tDIS ［ns］ CS SETUP TIME : tCSS ［ns ］ Ta= -40℃ Ta= 25℃ 60 SPEC 40 20 80 Ta= -40℃ Ta= 25℃ Ta= 125℃ 60 SPEC 40 20 0 0 2 3 4 5 6 2 3 SUPPLY VOLTAGE : VCC［V］ 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 20. CS Setup Time vs. Supply Voltage Figure 21. DI Setup Time vs. Supply Voltage 120 50 0 SPEC 100 -50 CS HOLD TIME : tCSH ［ns］ DI HOLD TIME : tDIH ［ ns］ -100 Ta= -40℃ Ta= 25℃ 80 Ta= 125℃ 60 SPEC 40 -150 -200 -250 Ta= -40℃ Ta= 25℃ Ta= 125℃ -300 -350 20 -400 0 -450 2 3 4 5 6 SUPPLY VOLTAGE : VCC ［V］ 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 23. CS Hold Time vs. Supply Voltage Figure 22. DI Hold Time vs. Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 10/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB 350 350 300 300 DATA "0" OUTPUT DELAY TIME : tPD0 ［ns ］ DATA "1" OUTPUT DELAY TIME : tPD1 ［ns ］ Typical Performance Curves‐Continued Ta= -40℃ Ta= 25℃ 250 Ta= 125℃ 200 SPEC 150 100 50 Ta= -40℃ Ta= 25℃ 250 Ta= 125℃ 200 SPEC 150 100 50 0 0 2 3 4 5 6 2 3 SUPPLY VOLTAGE : VCC［V］ 5 6 Figure 25. Data "0" Output Delay Time vs. Supply Voltage Figure 24. Data "1" Output Delay Time vs. Supply Voltage 250 250 ［ns ］ Ta= -40℃ Ta= 25℃ Ta= 125℃ 200 TIME BETWEEN CS AND OUTPUT HIGH-Z :tDF TIME BETWEEN CS AND OUTPUT : tSV ［ ns］ 4 SUPPLY VOLTAGE : VCC［V］ SPEC 150 100 50 0 Ta= -40℃ Ta= 25℃ Ta= 125℃ 200 SPEC 150 100 50 0 2 3 4 5 6 2 SUPPLY VOLTAGE : VCC［V］ 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 27. Time from CS to High-Z vs. Supply Voltage Figure 26. Time from CS Output Establishment vs. Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3 11/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Typical Performance Curves‐Continued 6 Ta= -40℃ Ta= 25℃ Ta= 125℃ WRITE CYCLE TIME : tE/W ［ms］ 5 SPEC 4 3 2 1 0 2 3 4 5 6 SUPPLY VOLTAGE : VCC ［V］ Figure 28. Write Cycle Time vs. Supply Voltage www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Description of Operation Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input), DO (serial data output), and CS (chip select) for device selection. In connecting one EEPROM to a microcontroller, connect it as shown in Figure.29-(a) or Figure.29-(b). And, when using the input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure.29-(b) (Refer to pages 19-20), wherein connection by 3 lines is possible. In case of using multiple EEPROM devices, refer to Figure. 29-(c). Microcontroller BR93H76RF CS CS CS SK SK SK SK DO DI DO DI DI DO CS3 CS1 CS0 SK DO DI DO Figure 29-(a). Connection by 4 lines Figure 29-(b). Connection by 3 lines CS SK DI DO CS CS SK DI DO Microcontroller BR93H76RF CS SK DI DO Microcontroller Device 1 Device 2 Device 3 Figure 29-(c). Connection example of multiple devices Figure 29. Connection Methods with Microcontroller Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called the “Start Bit”. After input of the start bit, the “Ope Code”, Address, and Data are then inputted consecutively. Address and Data are all inputted with MSB first. All “0” signal inputs after the rise of CS up to the start bit is ignored. Therefore, if there is a limitation in the bit width of PIC of the microcontroller, it is possible to input “0” before the start bit to control the bit width. Command Mode Command (1) Read (READ) Write enable (WEN) Address Start bit Ope code 1 10 ＊,A8,A7,A6,A5,A4,A3,A2,A1,A0 1 00 1 1 ＊ ＊ ＊ ＊ ＊ ＊ ＊ ＊ ＊,A8,A7,A6,A5,A4,A3,A2,A1,A0 Data BR93H76RF-2LB D15 to D0(READ DATA) － Write (WRITE) (2) 1 01 Write all (WRAL) (2,3) 1 00 0 1 ＊ ＊ ＊ ＊ ＊ ＊,B1,B0 D15 to D0(WRITE DATA) 1 00 0 0 ＊ ＊ ＊ ＊ ＊ ＊ ＊ ＊ － Write disable (WDS) D15 to D0(WRITE DATA) ・ Input the address and the data in MSB-first order. ・ As for *, input either VIH or VIL. *Start bit Acceptance of all the commands of this IC starts at recognition of the start bit. The “Start Bit” means the first “1” input after the rise of CS. (1) For READ, after setting the command, the data output of the selected address starts. Then, in a sequential order of addresses, the data of the next address will be outputted, and will continuously output data of succeeding addresses with the use of a continuous SK clock input. (Auto-Increment Function) (2) When the WRITE and the WRITE-All commands are executed, the previous data written in the selected memory cell are automatically deleted first, then the input data is written next. (3) For the write all command, data written in memory cell of the areas designated by B2, B1, and B0 are automatically deleted, and input data is written in bulk. Write All Area B1 B0 Write area 0 0 000h to 07Fh 0 1 080h to 0FFh 1 0 100h to 17Fh 1 1 180h to 1FFh www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 ･The write all command is written in bulk in 2Kbit unit. The write area can be selected up to 2bit. Confirm on the left side the settings and write areas of B1, and B0. 13/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Timing Chart ～ ～ ～ ～ ～ ～ 1) Read cycle (READ) CS ～ ～ (1) 2 4 5 ＊ A9 A8 3 30 29 ～ ～ 1 0 ～ ～ SK ～ ～ 1 1 0 A1 ～ ～ DI A0 D1 D0 D15 D14 ～ ～ D15 D14 ～ ～ 0 ～ ～ ～ ～ (2) ～ ～ ＊is Don’t Care. DO High-Z (1) Start bit When data “1” is input for the first time after the rise of CS, this will be recognized as the start bit. And, even if multiple “0” are input after the rise of CS, the first “1” input will still be recognized as the start bit, and the following operation starts. This is common to all the commands that will be discussed hereafter. (2) The succeeding address’ data output （Auto-Increment Function） Figure 30. Read Cycle ○When the READ command is recognized, the data (16bit) of the selected address is output to serial. And at that moment, “0” (dummy bit) is output first, in sync with address bit A0 and with the rise of SK. Afterwhich, the main data is output in sync with the rise of SK. This IC has Address Auto Increment Function available only for READ command, wherein after executing READ command on the first selected address, the data of the next address is read. And this will continue in a sequential order of addresses with the use of a continuous SK clock input, and by keeping CS at “H” during auto-increment. 2) Write cycle (WRITE) ～ ～ ～ ～ ～ ～ tCS CS 2 3 1 A8 A1 A0 D15 D14 D1 D0 ～ ～ 0 ～ ～ 1 ～ ～ DI ～ ～ Am ＊ n 29 ～ ～ 5 ～ ～ 4 ～ ～ 1 0 ～ ～ ～ ～ SK STATUS tSV ＊is Don’t Care. ～ ～ BUSY DO High-Z READY tE/W Figure 31. Write Cycle ○In this command, input 16-bit data (D15 to D0) are written to a designated address (A8 to A0). The actual write starts th th from the fall of CS, after D0 is sampled with SK clock (29 clock from the start bit input), to the rise of the 30 clock. When STATUS is not detected (CS="L" fixed), WRITE time is 4ms (Max) in conformity with tE/W. And when STATUS is detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0. Therefore, do not input any command. Write is not made or canceled if CS starts to fall after the rise of the 30th clock. Note: Take tSKH or more from the rise of the 29th clock to the fall of CS. 3) Write all cycle (WRAL) tCS CS SK 1 0 DI 1 2 0 3 0 5 4 0 m 11 B2 ＊ 1 n 29 B1 B0 D15 D1 D0 tSV ＊is Don’t Care. DO STATUS BUSY READY High-Z tE/W Figure 32. Write all Cycle ○In this command, input 16-bit data is written simultaneously to all addresses. Data is written in bulk at a write time of only 4ms (Max) in conformity with tE/W. When writing data to all addresses, designate each block by B1, and B0, and execute write. Write time is Max.4ms. The actual write starts from the fall of CS, after D0 is sampled with SK clock (29th clock from the start bit input), to the rise of the 30th clock. If CS was ended after the rise of the 30th clock, command is canceled, and write is not completed. Note:Take tSKH or more from the rise of the 29th clock to the fall of CS. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB 4) Write Enable (WEN) / Disable (WDS) Cycle ～ ～ CS 2 1 3 4 5 6 7 13 8 ～ ～ SK 1 0 0 ～ ～ DI ～ ～ ENABLE=1 1 DISABLE=0 0 DO High-Z Figure 33. Write Enable (WEN) / Disable (WDS) Cycle ○At power on, this IC is in Write Disable status by the internal RESET circuit. Before executing the WRITE command, it is necessary to execute the Write Enable command first. And, once this command is executed, writing is valid unitl the Write Disable command is executed or the power is turned off. However, the READ command is valid regardless of whether Write Enable / Disable command is executed. Input to SK after 6 clocks of this command is available by either “H” or “L”, but be sure to input it. ○When the Write Enable command is executed after power on, Write Enable status gets in. When the Write Disable command is executed then, the IC gets in Write Disable status as same as at power on, and then the WRITE command is canceled thereafter in software manner. However, the READ command is still executable. In Write Enable status, even when the WRITE command is input by mistake, writing will still continue. To prevent such a mistake, it is recommended to execute the Write Disable command after the completion of each WRITE execution. Application 1) Method to cancel each command ○READ Start bit Ope code Address 1bit 2bit 10bit Data 16bit Cancel is available in all areas in read mode. ●Method to cancel：cancel by CS =“L” Figure 34. READ Cancel Available Timing ○WRITE, WRAL ・Rise of 29th clock SK DI Start bit 1bit Ope code Address 2bit 10bit 28 29 30 31 D1 D0 a c b Enlarged figure Data tE/W 16bit a b a：From start bit to 29th clock rise Cancel by CS=“L” b：29th clock rise and after Cancellation is not available by any means. If Vcc is turned OFF in this area, designated address data is not guaranteed, therefore write once again. c：30th clock rise and after Cancel by CS=“L” However, when write is started in b area (CS is ended), cancellation is not available by any means. And when SK clock is input continuously, cancellation is not available. C Note 1) If Vcc is turned OFF in this area, designated address data is not guaranteed. Therefore, it is recommended to execute WRITE once again. Note 2) If CS is started at the same timing as that of the SK rise, WRITE execution/cancel becomes unstable. Therefore, it is recommended to set CS to “L” in SK=”L” area. As for SK rise, recommended timing is of tCSS/tCSH or higher. Figure 35. WRITE, WRAL cancel available timing www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB 2) I/O Equivalent Circuit ○Output Circuit DO OEint. Figure 36. Output Circuit (DO) ○Input circuit RESET int. CSint. CS Figure 37. Input Circuit (CS) EN SKint. SK Figure 38. Input Circuit (SK) EN DIint. DI Figure 39. Input Circuit (DI) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 16/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB 3) I/O Peripheral Circuit 3-1) Pull down CS By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented. ○Pull down resistance Rpd of CS pin To prevent mistake in operation and mistake write at power ON/OFF, a CS pull-down resistor is necessary. Select an appropriate value to this resistance value from microcontroller’s VOH, IOH and this IC’s VIH characteristics. Rpd ≧ Microcontroller VOHM IOHM Rpd ・・・① ・・・② VIHE Example) When VCC =5V, VIHE=3.5V, VOHM=4.0V, IOHM=2mA, from the equation ①, VIHE “H” output VOHM ≧ EEPROM VOHM IOHM “L” input Rpd ≧ ∴ Figure 40. CS Pull-Down Resistance Rpd ≧ 4.0 -3 2×10 2.0 [kΩ] With the value of Rpd satisfying the equation above, VOHM becomes 4.0V or higher, and with VIHE (=3.5V), equation ② is also satisfied. ・VIHE ・VOHM ・IOHM : EEPROM VIH specifications : Microcontroller VOH specifications : Microcontroller IOH specifications 3-2) DO is available for both pull up and pull down. DO output is “High-Z” except during READY / BUSY output timing in WRITE command and, after data output at READ command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull down and pull up DO. When there is no influence upon the microcontroller actions, DO may be left OPEN. If DO is OPEN during a transition of output from BUSY to READY status, and at an instance where CS=“H”, SK=“H”, DI=“H”, EEPROM recognizes this as a start bit, resets READY output, and sets DO=”High-Z”. Therefore, READY signal cannot be detected. To avoid such output, pull up DO pin for improvement. CS CS “H” SK SK Enlarged DI D0 DI High-Z READY DO High-Z DO BUSY BUSY CS=SK=DI=”H” When DO=OPEN Improvement by DO pull up DO BUSY READY CS=SK=DI=”H” When DO=pull up Figure 41. READY Output Timing at DO=OPEN www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 17/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB ○Pull up Resistance Rpu and Pull-down Resistance Rpd of DO pin As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC. Microcontroller ・・・③ VOLE ・・・④ EEPROM Rpu VILM IOLE Vcc－VOLE IOLE ≦ VILM Rpu ≧ Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V, from the equation ③, VOLE 5－0.4 2.1×10-3 Rpu ≧ 2.2 [kΩ] Rpu ≧ “L” input ∴ “L” output With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied. ・VOLE ・IOLE ・VILM ・VOLE ・IOLE ・VILM Figure 42. DO Pull Up Resistance EEPROM Microcontroller : EEPROM VOL specifications : EEPROM IOL specifications : Microcontroller VIL specifications VOHE IOHE ≧ VIHM Rpd ≧ ・・・⑤ VOHE ・・・⑥ Example) When VCC =5V, VOHE=4.8V, IOHE=0.1mA, VIHM=3.5V from the equation ⑤ VIHM VOHE 5－0.2 0.1×10-3 Rpd ≧ 48 [kΩ] Rpd ≧ “H” input Rpd IOHE “H” output ∴ With the value of Rpd to satisfy the above equation, VOHE becomes 4.8V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied. Figure 43. DO Pull Down Resistance ・VOHE ・IOHE ・VIHM : EEPROM VOH specifications : EEPROM IOH specifications : Microcontroller VIH specifications ○READY / BUSY Status Display (DO terminal) This display outputs the internal status signal. When CS is started after tCS (Min.200ns) from CS fall after write command input, “H” or “L” output. R/B display＝“L” (BUSY) = write under execution After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically. And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted. (DO status） R/B display = “H” (READY) = command wait status Even after tE/W (max.4ms) from write of the memory cell, the following command is accepted. Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur. Therefore, set DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.) (DO status） *Do not input any command while status signal is output. Command input in BUSY area is canceled, but command input in READY area is accepted. Therefore, status READY output is canceled, and malfunction and mistake write may be made. STATUS CS SK CLOCK DI WRITE INSTRUCTION DO tSV High-Z READY BUSY Figure 44. R/B Status Output Timing Chart www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 18/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB 4) When to directly connect DI and DO This IC has independent input terminal DI and output terminal DO, wherein signals are handled separately on timing chart. But, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by only 1 control line. Microcontroller EEPROM DI/O PORT DI R DO Figure 45. DI, DO Control Line Common Connection ○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input. Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same time in the following points. 4-1) 1 clock cycle to take in A0 address data at read command Dummy bit “0” is output to DO terminal. →When address data A0 = “1” input, through current route occurs. EEPROM CS input “H” EEPROM SK input A1 EEPROM DI input A0 Collision of DI input and DO output EEPROM DO output 0 High-Z Microcontroller DI/O port A1 D15 D14 D13 A0 Microcontroller output High-Z Microcontroller Figure 46. Collision Timing at Read Data Output at DI, DO Direct Connection 4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output. When the next start bit input is recognized, “HIGH-Z” gets in. →Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”, READY output “H” is output from DO terminal, and through current route occurs. Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted. ～ ～ EEPROM SK input Write command EEPROM DI input Write command EEPROM DO output Write command ～ ～ Write command ～ ～ EEPROM CS input ～ ～ ～ ～ ～ ～ READY ～ ～ ～ ～ BUSY READY High-Z Collision of DI input and DO output BUSY Microcontroller output Microcontroller input ～ ～ Write command ～ ～ Microcontroller DI/O port READY Microcontroller output Figure 47. Collision Timing at DI, DO Direct Connection www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 19/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB ○Selection of resistance value R The resistance R becomes through current limit resistance at data collision. When through current flows, noises of power source line and instantaneous stop of power source may occur. When allowable through current is defined as I, the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL, even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon basic operations. 4-3) Address data A0 = “1” input, dummy bit “0” output timing (When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI) ・Make the through current to EEPROM 10mA or below. ・See to it that the input level VIH of EEPROM should satisfy the following. Condition Microcontroller VOHM ≦ VIHE EEPROM VOHM ≦ IOHM×R + VOLE DI/O PORT At this moment, if VOLE=0V, DI VOHM ≦ IOHM×R VOHM “H” output R IOHM ∴ DO ・VIHE ・VOLE ・VOHM ・IOHM VOLE “L” output VOHM ・・・⑦ IOHM : EEPROM VIH specifications : EEPROM VOL specifications : Microcontroller VOH specifications : Microcontroller IOH specifications R ≧ Figure 48. Circuit at DI, DO Direct Connection (Microcontroller DI/O “H” Output, EEPROM “L” Output) 4-4) DO Status READY Output Timing (When the microcontroller DI/O is “L”, EEPROM DO outputs “H”, and “L” is input to DI) ・Set the EEPROM input level VIL so as to satisfy the following. Condition Microcontroller “L” output EEPROM DI/O PORT VOLM ≧ VILE DI VOLM ≧ VOHE – IOLM×R As this moment, if VOHE=Vcc, VOLM VOLM ≧ Vcc – IOLM×R R IOHM DO VOHE Vcc – VOLM R ≧ IOLM ∴ ・・・⑧ “H” output ・VILE ・VOHE ・VOLM ・IOLM : EEPROM VIL specifications : EEPROM VOH specifications : Microcontroller VOL specifications : Microcontroller IOL specifications Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=0.4V, IOLM=2.1mA, From the equation ⑦, R ≧ R ≧ ∴ R ≧ From the equation ⑧, VOHM R ≧ IOHM 5 0.4×10 R ≧ -3 12.5 [kΩ] ・・・⑨ ∴ R ≧ Vcc – VOLM IOLM 5 – 0.4 2.1×10-3 2.2 [kΩ] ・・・⑩ Therefore, from the equations ⑨ and ⑩, ∴ R ≧ 12.5 [kΩ] Figure 49. Circuit at DI, DO Direct Connection (Microcontroller DI/O “L” Output, EEPROM “H” Output) www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB 5) Power-Up/Down Conditions ・At power ON/OFF, set CS “L”. When CS is “H”, this IC gets in input accept status (active). At power ON, set CS “L” to prevent malfunction from noise. (When CS is in “L” status, all inputs are canceled.) At power decline low power status may prevail. Therefore, at power OFF, set CS “L” to prevent malfunction from noise. VCC VCC GND VCC CS GND Bad example Good example Figure 50. Timing at Power ON/OFF (Bad example）CS pin is pulled up to Vcc. (Good example）It is “L” at power ON/OFF. In this case, CS becomes “H” (active status), EEPROM may Set 10ms or higher to recharge at power OFF. malfunction or have write error due to noises. This is true even When power is turned on without observing this condition, when CS input is High-Z. IC internal circuit may not be reset. ○POR circuit This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is “H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the following conditions. 1. Set CS=”L” 2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action. tR VCC Recommended conditions of tR, tOFF, Vbot tR tO F F tOFF Vbot V bot 10m s or below 10m s or higher 0.3V or below 100m s or below 10m s or higher 0.2V or below 0 Figure 51. Rise Waveform Diagram ○LVCC Circuit LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ=1.9V) or below, it prevents data rewrite. 6) Noise Countermeasures ○VCC Noise (Bypass Capacitor) When noise or surge gets in the power source line, malfunction may occur. Therefore, in removing these, it is recommended to attach a bypass capacitor (0.1μF) between IC VCC and GND as close to IC as possible. It is also recommended to attach a bypass capacitor between board VCC and GND. ○SK Noise When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V. If noise exists at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK to 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 21/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Operational Notes (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) Application Circuit Although we can recommend the application circuits contained herein with a relatively high degree of confidence, we ask that you verify all characteristics and specifications of the circuit as well as its performance under actual conditions. Please note that we cannot be held responsible for problems that may arise due to patent infringements or noncompliance with any and all applicable laws and regulations. (3) Absolute Maximum Ratings Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (4) Ground Voltage The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no pins are at a voltage below the ground pin at any time, even during transient condition. (5) Thermal Consideration Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd). Package Power dissipation ： Pd (W)=(Tjmax－Ta)/θja Power dissipation ： Pc (W)=(Vcc－Vo)×Io+Vcc×Ib Tjmax ： Maximum junction temperature=150℃, Ta ： Peripheral temperature[℃] , θja ： Thermal resistance of package-ambience[℃/W], Pd ： Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current (6) Short between pins and mounting errors Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins. (7) Operation under strong Electromagnetic Field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 22/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Part Numbering B R 9 3 H 7 6 R F － 2 L B H 2 BUS Type 93: Microwire BUS Operating temperature H: -40°C to +125°C Capacity 76 = 8Kbit Package RF : SOP8 Process code Product class LB for Industrial applications Package specifications H2：reel shape emboss taping (SOP8) Package Capacity 8K Orderable Part Number Type Quantity SOP8 Reel of 250 BR93H76RF-2LBH2 Marking Diagram SOP8(TOP VIEW) Part Number Marking R H 7 6 LOT Number 1PIN MARK www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 23/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Physical Dimensions Tape and Reel Information Package Name SOP8 Max 5.35 (include. BURR) Drawing: EX112-5001-1 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 24/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet BR93H76RF-2LB Revision History Date Revision 15.Nov.2013 001 New Release 27.Feb.2014 002 Delete sentence “and log life cycle” in General Description and Futures. www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Changes 25/25 TSZ02201-0R1R0G100280-1-2 27.Feb.2014 Rev.002 Datasheet Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice - SS © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label QR code printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with ROHM representative in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable for infringement of any intellectual property rights or other damages arising from use of such information or data.: 2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice - SS © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2014 ROHM Co., Ltd. All rights reserved. Rev.001