ON NTGS3130N Power mosfet Datasheet

NTGS3130N, NVGS3130N
Power MOSFET
20 V, 5.6 A Single
N-Channel, TSOP-6
Features
•
•
•
•
•
Leading Edge Trench Technology for Low On Resistance
Low Gate Charge for Fast Switching
Small Size (3 x 2.75 mm) TSOP−6 Package
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device
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V(BR)DSS
20 V
RDS(on) mAX
ID Max
24 mW @ 4.5 V
5.6 A
32 mW @ 2.5 V
4.9 A
N−Channel
Applications
Drain 1 2 5 6
• DC−DC Converters
• Lithium Ion Battery Applications
• Load/Power Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Gate 3
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8
V
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
t ≤ 10 s
TA = 25°C
Steady
State
TA = 85°C
TA = 25°C
5.6
ID
Steady
State
4.1
PD
1.1
W
1.4
TA = 85°C
ID
A
3.0
W
IDM
19
A
TJ, Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
tP ≤ 10 s
Operating and Storage Temperature Range
PD
4.2
0.6
Pulsed Drain Current
TA = 25°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t ≤ 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
MARKING DIAGRAM &
PIN ASSIGNMENT
A
6.2
t ≤ 10 s
TA = 25°C
Source 4
Max
Unit
110
RqJA
90
Drain Drain Source
6 5 4
1
TSOP−6
CASE 318G
STYLE 1
XX
M
G
XX M G
G
1 2 3
Drain Drain Gate
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
°C/W
200
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
NTGS3130N/D
NTGS3130N, NVGS3130N
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V; ID = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
V
9.8
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V; VDS = 16 V,
TJ = 25°C
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0, VGS = ± 8 V
100
nA
VGS(TH)
VGS = VDS, ID = 250 mA
1.4
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
0.4
0.6
3.4
gFS
mV/°C
VGS = 4.5 V, ID = 5.6 A
19
24
VGS = 2.5 V, ID = 4.9 A
25
32
VDS = 10 V, ID = 5.6 A
8.2
mW
S
CHARGES, CAPACITANCE, & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V,
f = 1 MHz,
VDS = 16 V
VGS = 0 V,
f = 1 MHz,
VDS = 10 V
CRSS
935
169
104
198
110
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.2
Total Gate Charge
QG(TOT)
11.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
13.2
VGS = 4.5 V
VDS = 16 V
ID = 5.6 A
VGS = 4.5 V
VDS = 5.0 V
ID = 6.2 A
pF
965
20.3
0.60
1.5
18.0
nC
0.6
1.4
2.7
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
VGS = 4.5 V,
VDD = 16 V,
ID = 1 A,
RG = 3 W
tr
td(OFF)
tf
6.3
12.6
7.3
13.5
21.7
35.1
9.7
17.6
0.7
1.2
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 1.0 A
TJ = 25°C
V
20.4
VGS = 0 Vdc,
dISD/dt = 100 A/ms,
IS = 1.0 A
QRR
8.1
ns
11.6
8.8
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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2
NTGS3130N, NVGS3130N
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
1.8 V
2.0 V
16
12
8
1.5 V
4
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
25
VGS = 4.5 V to 2.5 V
TJ = 25°C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
10
TJ = 25°C
5
TJ = −55°C
0.75
1.0
1.25
1.5
1.75
2.0
Figure 2. Transfer Characteristics
0.06
TJ = 125°C
0.04
TJ = 25°C
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE VOLTAGE (V)
2.25
0.10
TJ = 25°C
0.08
VGS = 1.8 V
0.06
VGS = 2 V
0.04
VGS = 2.5 V
0.02
VGS = 4.5 V
3V
0.00
2
4
6
8
10
12
14
16
18
20
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
0.04
1400
1200
0.03
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 125°C
Figure 1. On−Region Characteristics
0.08
1
15
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 5.6 A
0
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.10
0.02
VDS ≥ 5 V
0
0.5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
20
VGS = 2.5 V
0.02
VGS = 4.5 V
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
1000
800
600
400
Coss
200
0.01
−50
−25
0
25
50
75
100
125
0
150
Crss
0
2
4
6
8
10
12
14
16
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
18
20
NTGS3130N, NVGS3130N
TYPICAL CHARACTERISTICS
6
VDS
14
VGS
4
12
VDS = 5 V
10
3
QGS
QGD
8
VDS = 16 V
2
6
4
1
ID = 5.6 A
TJ = 25°C
0
0
2
4
6
8
10
12
2
14
0
IS, SOURCE CURRENT (A)
5
16
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
V GS, GATE-TO-SOURCE VOLTAGE (V)
10
18
QT
125°C
25°C
1.0
TJ = −55°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
100
5
100 ms
1 ms
1
0.1
0.01
SINGLE PULSE
RqJA = 110°C/W
TA = 25°C
4
10
POWER (W)
ID, DRAIN CURRENT (A)
VGS = 0 V
10 ms
VGS = 8 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
2
1
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
3
0
100
0
10
1000
100
SINGLE PULSE TIME (s)
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
RqJA, EFFECTIVE TRANSIENT THERMAL RESISTANCE NORMALIZED
1
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
0.001
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
Figure 11. Thermal Response
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4
1
10
100
1000
NTGS3130N, NVGS3130N
Table 1. ORDERING INFORMATION
Part Number
Marking
(XX)
Package
Shipping†
NTGS3130NT1G
S9
TSOP−6
(Pb−Free)
3000 / Tape & Reel
NVGS3130NT1G
VS9
TSOP−6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTGS3130N, NVGS3130N
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE V
D
ÉÉÉ
ÉÉÉ
6
E1
1
5
2
H
L2
4
GAUGE
PLANE
E
3
NOTE 5
L
b
C
DETAIL Z
e
SEATING
PLANE
c
A
0.05
M
A1
DETAIL Z
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
MILLIMETERS
DIM
MIN
NOM
MAX
A
0.90
1.00
1.10
A1
0.01
0.06
0.10
b
0.25
0.38
0.50
c
0.10
0.18
0.26
D
2.90
3.00
3.10
E
2.50
2.75
3.00
E1
1.30
1.50
1.70
e
0.85
0.95
1.05
L
0.20
0.40
0.60
L2
0.25 BSC
0°
10°
M
−
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
6X
3.20
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NTGS3130N/D